PD - 90397G POWER MOSFET THRU-HOLE (MO-036AB) IRFG9110 JANTX2N7335 JANTXV2N7335 REF:MIL-PRF-19500/599 100V, QUAD P-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG9110 RDS(on) I D 1.4Ω -0.75A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. MO-036AB Features: n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -0.75 -0.5 -3.0 1.4 0.011 ±20 75 — — -5.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 ( 0.063 in.(1.6mm) from case for 10s) 1.3 (typical) C g For footnotes refer to the last page www.irf.com 1 04/16/02 IRFG9110 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage -100 — — V — -0.098 — V/°C — — -2.0 0.67 — — — — — — — — 1.4 1.73 -4.0 — -25 -250 Ω ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 10 -100 100 15 7.0 8.0 30 60 40 40 — C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 200 85 30 — — Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -0.5A➃ VGS = -10V, ID = -0.75A ➃ VDS = VGS, ID = -250µA VDS > -15V, IDS = -0.5A➃ VDS= -80V, VGS= 0V VDS = -80V VGS = 0V, TJ = 125°C VGS = -20V VGS =20V VGS = -10V, ID= -0.75A VDS = -50V V S( ) Ω BVDSS µA nA nC VDD = -50V, ID = -0.75A VGS = -10V, RG =7.5Ω ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -0.75 -3.0 -5.5 200 9.0 Test Conditions A V nS µc Tj = 25°C, IS = -0.75A, VGS = 0V ➃ Tj = 25°C, IF = -0.75A, di/dt ≤-100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction to Ambient Min Typ Max Units — — — — 17 90 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRFG9110 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFG9110 13a & b 4 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRFG9110 V DS VGS RD D.U.T. RG + V DD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf VGS 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFG9110 L VDS D .U .T RG IA S -10V -20V VD D A D R IV E R 0.0 1Ω tp 15V Fig 12a. Unclamped Inductive Test Circuit IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -10V 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFG9110 Foot Notes: ➀ Repetitive Rating; Pulse width limited by ➂ ISD ≤ -0.75A, di/dt ≤ −75A/µs, maximum junction temperature. ➁ VDD =-25V, starting TJ = 25°C, L = 266mH Peak IL = -0.75A, VGS = -10V ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD≤ -100V, TJ ≤ 150°C Case Outline and Dimensions — MO-036AB IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02 www.irf.com 7