HITFET=BTS 949 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection (ESD) On-state resistance RDS(on) 18 mΩ •=Thermal shutdown with latch Current limit I D(lim) 9.5 A • Overload protection Nominal load current I D(ISO) 19 A • Short circuit protection Clamping energy EAS 6000 mJ • Overvoltage protection • Current limitation • Maximum current adjustable with external resistor 1 • Current sense 5 • Status feedback with external input resistor VPT05166 • Analog driving possible Application 1 • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits 5 VPT05165 General Description N channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD 2 M NC 1 4 dv/dt limitation IN 3 Current limitation Source 5 CC ESD R CC Drain Overvoltage protection Overload protection Overtemperature protection Short circuit circuit Short protection protection HITFET Page 1 07.06.2000 BTS 949 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Drain source voltage VDS Drain source voltage for short circuit protection RCC = 0 Ω VDS(SC) Value 60 Unit V 15 without RCC 50 Continuous input current 1) mA IIN -0.2V ≤ VIN ≤ 10V no limit VIN < -0.2V or VIN > 10V | IIN | ≤ 2 Operating temperature Tj - 40 ... +150 °C Storage temperature Tstg - 55 ... +150 Power dissipation Ptot 240 W EAS 6000 mJ 3000 V TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 19 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VIN=low or high; VA =13.5 V VLD td = 400 ms, RI = 2 Ω, ID =0,5*19A 110 td = 400 ms, RI = 2 Ω, ID = 19A 92 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 Thermal resistance junction - case: RthJC 0.7 junction - ambient: RthJA 75 SMD version, device on PCB:3) RthJA 45 K/W 1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3). 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. Page 2 07.06.2000 BTS 949 Electrical Characteristics Parameter Symbol at Tj=25°C, unless otherwise specified Values Unit min. typ. max. 60 - 73 V - - 25 µA 1.3 1.7 2.2 V IIN(1) - - 100 µA Input current - current limitation mode, ID=ID(lim): IIN(2) - 400 1000 1500 3000 6000 Tj = 25 °C 500 - - Tj = 150 °C 300 - - Characteristics Drain source clamp voltage VDS(AZ) Tj = - 40 ...+ 150°C, ID = 10 mA Off state drain current IDSS VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V Input threshold voltage VIN(th) ID = 3,9 mA Input current - normal operation, ID<ID(lim): VIN = 10 V VIN = 10 V Input current - after thermal shutdown, ID=0 A: VIN = 10 V IIN(3) Input holding current after thermal shutdown 1) IIN(H) On-state resistance RDS(on) mΩ VIN = 5 V, ID = 19 A, Tj = 25 °C - 18 22 VIN = 5 V, ID = 19 A, Tj = 150 °C - 30 44 VIN = 10 V, I D = 19 A, Tj = 25 °C - 14 18 VIN = 10 V, I D = 19 A, Tj = 150 °C - 25 36 19 - - On-state resistance RDS(on) Nominal load current (ISO 10483) ID(ISO) A VIN = 10 V, VDS = 0.5 V, TC = 85 °C 1If the input current is limited by external components, low drain currents can flow and heat the device. Auto restart behaviour can occur. Page 3 07.06.2000 BTS 949 Electrical Characteristics Parameter Symbol at Tj=25°C, unless otherwise specified Values Unit min. typ. max. - 175 - Tj = -40...+150 °C, without RCC 9.5 19 40 VIN = 10 V, VDS = 12 V, tm = 350 µs, 150 220 270 ton - 40 100 toff - 70 170 -dVDS/dton - 1 3 dVDS/dtoff - 1 3 150 165 - Characteristics Initial peak short circuit current limit ID(SCp) A VIN = 10 V, VDS = 12 V Current limit 1) ID(lim) VIN = 10 V, VDS = 12 V, tm = 350 µs, Tj = -40...+150 °C, RCC = 0 Ω Dynamic Characteristics Turn-on time VIN to 90% ID : µs RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID : RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb : V/µs RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V Protection Functions Thermal overload trip temperature Tjt Unclamped single pulse inductive energy EAS °C mJ ID = 19 A, Tj = 25 °C, Vbb = 32 V 6000 - - ID = 19 A, Tj = 150 °C, Vbb = 32 V 1800 - - - 1,1 - Inverse Diode Inverse diode forward voltage VSD V IF = 5*19A, tm = 300 µS, VIN = 0 V 1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 µs. Page 4 07.06.2000 BTS 949 Block Diagramm Terms Inductive and overvoltage output clamp RL I IN 1 V 4 ID CC S D 3 VDS Vbb S HITFET RCC V IN D IN V Z 5 CC HITFET Short circuit behaviour The ground lead impedance of RCC should be as low as possible V IN Input circuit (ESD protection) I D(SCp) I D(Lim) ID IN ESD-ZD I Source t0 t0: ESD zener diodes are not designed for DC current > 2 mA @ VIN >10V. tm t1 t2 Turn on into a short circuit tm: Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Page 5 07.06.2000 BTS 949 Maximum allowable power dissipation On-state resistance Ptot = f(Tc ) RON = f(Tj ); ID=19A; VIN =10V BTS 949 40 260 W mΩ 220 RDS(on) 200 Ptot 180 160 30 25 max. 140 20 120 typ. 15 100 80 10 60 40 5 20 0 0 20 40 60 80 100 120 °C 0 -50 160 -25 0 25 50 75 100 150 Tj 150 On-state resistance Typ. input threshold voltage RON = f(Tj ); ID= 19A; V IN=5V VIN(th) = f(Tj); ID =3,9A; VDS=12V 45 2.0 mΩ V 1.6 VIN(th) 35 RDS(on) °C 30 max. 1.4 1.2 25 1.0 typ. 20 0.8 15 0.6 10 0.4 5 0 -50 0.2 -25 0 25 50 75 100 °C 150 Tj 0.0 -50 -25 0 25 50 75 100 °C 150 Tj Page 6 07.06.2000 BTS 949 Typ. transfer characteristics Typ. short circuit current ID = f(VIN); VDS =12V; Tj =25°C IDlim = f(Tj); RCC =0Ω, VDS =12V Parameter: VIN 250 160 A 10V A 9V 8V 100 ID ID 120 150 7V 80 6V 100 60 5V 40 4V 50 20 0 0 3V 1 2 3 4 5 V 0 -50 7 -25 0 25 50 75 100 VIN °C 150 Tj Typ. output characteristic Safe Operating Area I D = f(VDS); T j=25°C ID(SC) = f(VDS ); Tj =25°C Parameter: VIN 150 300 10V A A 6V 100 ID ID 200 5V 75 150 4V 50 100 25 50 VIN=3V 0 0 1 2 3 4 5 V 0 0 7 VDS 10 20 30 V 50 VDS Page 7 07.06.2000 BTS 949 Typ. current limit versus RCC Typ. current sense characteristics ID(lim) = f(RCC ); Tj=25°C VCC = f(ID); VIN=10V Parameter: VIN Parameter: RCC , Tj 250 A 600 mV 10V 500 200 450 VCC 175 ID no Rcc 150 300 100 250 5V 82 Ohm 350 125 75 25°C 400 125°C 47 Ohm 200 150 50 22 Ohm 100 25 0 -2 10 50 -1 10 10 0 10 1 10 2 10 Ω RCC 4 0 0 10 20 30 40 50 A 65 ID Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 0 K/W Z thJC 10 -1 D=0.5 0.2 0.1 0.05 10 -2 0.02 0.01 0.005 10 -3 0 10 -4 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 2 tP Page 8 07.06.2000 BTS 949 Application examples: Current Sense Features and Status Signals IN D HITFET µC CC V bb S RCC V CC IN open load thermal shutdown V cc V cc reached triptemperature The accuray of Vcc is at each temperature about ±10 % Status signal of thermal shutdown by monitoring input current R St IN µC V IN D HITFET CC V bb S ∆V V IN thermal shutdown ∆V = RST *IIN(3) Page 9 07.06.2000 BTS 949 Package Ordering Code Package Ordering Code P-TO220-5-62 Q67060-S6703-A4 P-TO220-5-3 Q67060-S6703-A2 9.9 9.5 3.7 4.4 0.8 0.8 0.2 M GPT05166 1) shear and punch direction no burrs this surface Package Ordering Code P-TO220-5-43 On request 5.6 2.4 0.5 4x1.7=6.8 4 x 1.7 = 6.8 15˚ 1.7 0.5 1.7 9.2 12.8 15.6 1.5 1.5 3.6 9.2 1) 1) 3) 9.75 5 2) 10.5 2.8 1.3 0.2 2.4 9.9 8 4.4 1.3 4.5 8.2 GPT05165 1) shear and punch direction no burrs this surface 2) min. length by tinning 3) max. 11 mm allowable by tinning 9.9 4.4 9.5 3.7 9.2 12.8 15.6 2.8 1.3 2) 13.5 3) 1 1) 0.8 0.5 2.4 1.7 4 x 1.7 = 6.8 0,3 M GPT05896 1) Punch direction, burr max. 0.04 2) Dip tinning 3) Max. 14.5 by dip tinning press burr max. 0.05 radii not dimensioned max. 0.2 Page 10 07.06.2000 BTS 949 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 07.06.2000