SPP24N60C3 Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 0.16 Ω ID 24.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 P-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPP24N60C3 Package P-TO220-3-1 Ordering Code Q67040-S4639 Marking 24N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 24.3 TC = 100 °C 15.4 Pulsed drain current, tp limited by Tjmax I D puls 72.9 Avalanche energy, single pulse EAS 780 mJ I D = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1 I D = 24.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS 24.3 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, T C = 25°C Ptot 240 W Operating and storage temperature T j , T stg -55... +150 °C Rev. 2.0 Page 1 2004-03-02 SPP24N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 , ID = 24.3 , Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 0.52 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=24.3A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=1200µΑ, VGS=VDS Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 2.0 RG µA Tj=25°C, - 0.1 1 Tj=150°C - - 100 VGS=20, VDS =0V - - 100 Ω VGS=10V, ID=15.4A, Tj=25°C - 0.14 0.16 Tj=150°C - 0.34 - f=1MHz, open Drain - 0.66 - Page 2 nA 2004-03-02 SPP24N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 21.5 - S pF ID=15.4A Input capacitance Ciss V GS=0V, V DS=25V, - 3000 - Output capacitance Coss f=1MHz - 1000 - Reverse transfer capacitance Crss - 60 - - 141 - - 224 - Effective output capacitance, 2) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 3) Co(tr) pF time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 13 - Rise time tr ID=24.3A, R G=3.3Ω - 21 - Turn-off delay time td(off) - 140 - Fall time tf - 14 - - 12.7 - - 45.8 - - 104.9 135 - 5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=480, ID=24.3A VDD=480V, ID=24.3A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=24.3A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.0 Page 3 2004-03-02 SPP24N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 24.3 - - 72.9 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , - 600 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 13 - µC Peak reverse recovery current Irrm - 70 - A Peak rate of fall of reverse dirr /dt - 1400 - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.006524 R th2 Cth1 0.0004439 0.013 Cth2 0.001662 R th3 0.025 Cth3 0.002268 R th4 0.096 Cth4 0.006183 R th5 0.117 Cth5 0.014 R th6 0.053 Cth6 0.104 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.0 Page 4 2004-03-02 SPP24N60C3 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 260 10 2 SPP24N60C3 W A 220 200 10 1 ID Ptot 180 160 140 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 120 100 80 10 -1 60 40 20 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 0 100 Vgs = 20V Vgs = 7.5V Vgs = 7V Vgs = 6.5V 80 Vgs = 6V Vgs = 5.5V 70 Vgs = 5V Vgs = 4.5V 60 Vgs = 4V A K/W ID ZthJC 10 -1 10 -2 50 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 40 30 20 10 10 -4 -7 10 Rev. 2.0 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 Page 5 0 0 4 8 12 16 20 26 V VDS 2004-03-02 3 SPP24N60C3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 50 1 Vgs = 20V Vgs = 6.5V Vgs = 6V Vgs = 5.5V 40 Vgs = 5V Vgs = 4.5V 35 Vgs = 4V Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 6.5V Vgs = 20V Ω RDS(on) ID A 30 25 0.8 0.7 0.6 20 0.5 15 0.4 10 0.3 5 0 0 4 8 12 16 20 0.2 0 26 V VDS 5 10 15 20 25 30 35 40 A 50 ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 15.4 A, VGS = 10 V parameter: tp = 10 µs 100 Ω A 0.8 80 0.7 70 ID RDS(on) 1 SPP24N60C3 0.6 60 0.5 50 0.4 40 0.3 30 98% 0.2 Tj = 25°C Tj = 150°C 20 typ 0.1 0 -60 10 -20 20 60 100 °C 180 Tj Rev. 2.0 Page 6 0 0 1 2 3 4 5 6 7 8 V 10 VGS 2004-03-02 SPP24N60C3 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 24.3 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPP24N60C3 V SPP24N60C3 A 10 10 1 0.2 VDS max IF VGS 12 0.8 VDS max 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 20 40 60 80 100 10 -1 0 140 nC 170 120 0.4 0.8 1.2 1.6 2 2.4 V QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 10 A, VDD = 50 V 28 0.9 mJ A 0.7 IAR EAS 20 16 0.6 0.5 Tj(START)=25°C 12 0.4 0.3 8 Tj(START)=125°C 0.2 4 0 -3 10 Rev. 2.0 0.1 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 4 Page 7 0 25 50 75 100 °C 150 Tj 2004-03-02 SPP24N60C3 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=1mJ 720 SPP24N60C3 1000 V 680 PAR V(BR)DSS W 660 600 640 620 400 600 580 200 560 540 -60 -20 20 60 100 °C 0 3 10 180 10 4 5 10 Hz Tj 10 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 5 28 pF Ciss Coss Crss 10 4 µJ Eoss C 20 10 3 16 12 10 2 8 10 1 4 10 0 0 100 200 300 400 V 600 VDS Rev. 2.0 0 0 100 200 300 400 V 600 VDS Page 8 2004-03-02 6 SPP24N60C3 Definition of diodes switching characteristics Rev. 2.0 Page 9 2004-03-02 SPP24N60C3 P-TO-220-3-1 B 4.44 0.05 9.98 ±0.48 2.8 ±0.2 1.27±0.13 13.5 ±0.5 C A 5.23 ±0.9 15.38 ±0.6 10 ±0.4 3.7 ±0.2 0.5 ±0.1 3x 0.75 ±0.1 2.51±0.2 1.17 ±0.22 2x 2.54 0.25 M A B C All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 Rev. 2.0 Page 10 2004-03-02 SPP24N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 Page 11 2004-03-02