BS 107 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information E6288 Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage V 200 Unit V DGR RGS = 20 kΩ 200 Gate source voltage VGS ESD Sensitivity (HBM) as per MIL-STD 883 ± 20 Class 1 Continuous drain current A ID TA = 31 ˚C 0.13 DC drain current, pulsed IDpuls TA = 25 ˚C 0.52 Power dissipation W Ptot TA = 25 ˚C Data Sheet Values 1 1 05.99 BS 107 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 125 DIN humidity category, DIN 40 040 Unit ˚C K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C 200 - - 0.8 1.5 2 VDS = 200 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 200 V, V GS = 0 V, Tj = 125 ˚C - 2 60 VDS = 130 V, V GS = 0 V, Tj = 25 ˚C - - 30 nA VDS = 70 V, VGS = 0.2 V, Tj = 25 ˚C - - 1 µA Gate threshold voltage V GS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS Drain-Source on-state resistance nA IGSS VGS = 20 V, VDS = 0 V - 1 10 Ω RDS(on) VGS = 4.5 V, ID = 0.12 A - 14 26 VGS = 2.8 V, ID = 0.02 A - 14.5 28 Data Sheet 2 µA 05.99 BS 107 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.12 A Input capacitance 0.06 - 60 80 - 8 12 - 3.5 5 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 0.17 ns td(on) VDD = 30 V, VGS = 10 V, ID = 0.24 A RG = 50 Ω Rise time - 5 8 - 8 12 - 12 16 - 15 20 tr VDD = 30 V, VGS = 10 V, ID = 0.24 A RG = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.24 A RG = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.24 A RG = 50 Ω Data Sheet 3 05.99 BS 107 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 ˚C Inverse diode direct current,pulsed 0.13 - - 0.52 V V SD VGS = 0 V, IF = 0.5 A Data Sheet - ISM TA = 25 ˚C Inverse diode forward voltage - - 4 0.9 1.2 05.99 BS 107 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 4 V 1.2 0.14 W A 0.12 1.0 Ptot ID 0.9 0.11 0.10 0.8 0.09 0.7 0.08 0.6 0.07 0.5 0.06 0.05 0.4 0.04 0.3 0.03 0.2 0.02 0.1 0.01 0.00 0.0 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 TA ˚C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25˚C 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 5 05.99 BS 107 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 0.30 80 Ptot = 1W k a li j hgf e A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C c Ω d 0.26 ID b VGS [V] 0.24 a 2.0 0.22 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 6.0 0.12 i 7.0 0.10 j 8.0 0.20 0.18 0.16 c 0.14 0.08 k 9.0 b l 10.0 RDS (on) 60 50 40 30 20 d 0.06 f e k ig l j h 10 VGS [V] = 0.04 a 2.0 a 0.02 0.00 b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 j 8.0 k l 9.0 10.0 0 0 2 4 6 8 V 11 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 VDS A 0.18 ID Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥ 2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max 0.40 0.30 S A ID 0.26 gfs 0.30 0.24 0.22 0.20 0.25 0.18 0.16 0.20 0.14 0.12 0.15 0.10 0.08 0.10 0.06 0.05 0.04 0.00 0.02 0.00 0 1 2 3 4 5 6 7 8 V 10 0.00 VGS Data Sheet 0.05 0.10 0.15 0.20 A 0.30 ID 6 05.99 BS 107 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.12 A, VGS = 4.5 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 65 RDS (on) 4.6 Ω V 55 4.0 VGS(th) 50 3.6 45 3.2 40 2.8 35 2.4 98% 98% 30 2.0 25 typ 1.6 20 typ 1.2 15 2% 10 0.8 5 0.4 0 0.0 -60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 10 0 pF A IF C 10 2 10 -1 Ciss 10 1 10 -2 Tj = 25 ˚C typ Coss Tj = 150 ˚C typ Tj = 25 ˚C (98%) Crss Tj = 150 ˚C (98%) 10 0 0 5 10 15 20 25 30 V 10 -3 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99