IL4216 700 V IL4217 800 V IL4218 600 V TRIAC DRIVER OPTOCOUPLER FEATURES • High Input Sensitivity IFT=1.3 mA • 600/700/800 V Blocklng Voltage • 300 mA On-State Current • High Static dv/dt 10,000 V/µsec., typical • Inverse Parallel SCRs Provide Commutating dv/dt >10 KV/µsec • Very Low Leakage <10 µA • Isolation Test Voltage from Double Molded Package 5300 VACRMS • Package, 6-Pln DIP • Underwriters Lab File #E52744 Dimensions in inches (mm) Pin One ID. 3 2 High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 1.3 mA (DC). The IL421x uses two discrete SCRs resulting in a commutating dv/dt of greater than 10KV/µs. The use of a proprietary dv/dt clamp results in a static dv/dt of greater than 10KV/µs. This clamp circuit has a MOSFET that is enhanced when high dv/dt spikes occur between MT1 and MT2 of the TRIAC. The FET clamps the base of the phototransistor when conducting, disabling the internal SCR predriver. The blocking voltage of up to 800 V permits control of off-line voltages up to 240 VAC, with a safety factor of more than two, and is sufficient for as much as 380 VAC. Current handling capability is up to 300 mA RMS, continuous at 25°C. The IL421x isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive inductive, or capacitive loads including motors solenoids, high current thyristors or TRIAC and relays. Applications include solid-state relays, industrial controls, office equipment, and consumer appliances. LED 1 Anode .248 (6.30) .256 (6.50) 6 Triac Anode 2 Substrate 5 do not connect Triac 4 Anode 1 LED 2 Cathode 4 5 6 NC 3 .335 (8.50) .343 (8.70) .039 (1.00) min. DESCRIPTION The IL421x consists of an AlGaAs IRLED optically coupled to a pair of photosensitive non-zero crossing SCR chips and are connected inversely parallel to form a TRIAC. These three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high insulation double molded, over/under leadframe construction. 1 4° typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18° typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .300 (7.62) .347 (8.82) Maximum Ratings Emitter Reverse Voltage ...................................................................................6 V Forward Current ..............................................................................60 mA Surge Current ....................................................................................2.5 A Power Dissipation.........................................................................100 mW Derate Linearly from 25°C ......................................................1.33 mW/°C Thermal Resistance....................................................................750 °C/W Detector Peak Off-State Voltage IL4216...........................................................................................600 V IL4217...........................................................................................700 V IL4218...........................................................................................800 V RMS On-State Current...................................................................300 mA Single Cycle Surge...............................................................................3 A Total Power Dissipation ................................................................500 mW Derate Linearly from 25°C ........................................................6.6 mW/°C Thermal Resistance.....................................................................150°C/W Package Isolation Test Voltage........................................................... 5300 VACRMS Storage Temperature......................................................–55°C to +150°C Operating Temperature ..................................................–55°C to +100°C Lead Soldering Temperature................................................ 260°C/5 sec. Isolation Resistance VIO=500 V, TA=25°C ................................................................. ≥1012 Ω VIO=500 V, TA=100°C ............................................................... ≥1011 Ω 5–1 Characteristics (TA=25°C) Parameter Symbol Min. Typ. Max. 1.3 1.5 6 30 Unit Condition Emitter Forward Voltage VF Breakdown Voltage VBR V IF=20 mA V IR=10 mA Reverse Current IR 0.1 µA VR=6 V Capacitance CO 40 pF VF=o V, f=1 MHz Thermal Resistance, Junction to Lead RTHJL 750 °C/W 10 Output Detector Repetitive Peak Off-State Voltage IL4216 IL4217 IL4218 VDRM VDRM VDRM 600 700 800 650 750 850 V V V IDRM=100 µA IDRM=100 µA IDRM=100 µA Off-State Voltage IL4216 IL4217 IL4218 VD(RMS) VD(RMS) VD(RMS) 424 484 565 460 536 613 V V V ID(RMS)=70 µA ID(RMS)=70 µA ID(RMS)=70 µA Off-State Current ID(RMS) 10 100 µA VD=600 V, TA=100°C Reverse Current IR(RMS) 10 100 µA VR=600 V, TA=100°C On-State Voltage VTM 1.7 3 V IT=300 mA On-State Current ITM 300 mA PF=1.0, VT(RMS)=1.7 V Surge (Non-Repetitive) On-State Current ITSM 3 A f=50 Hz Holding Current IH 65 200 µA VT=3 V Latching Current IL 5 mA VT=2.2 V LED Trigger Current IFT 0.7 mA VAK=5 V Turn-On Time tON 35 µs VRM=VDM=424 VAC Turn-Off Time tOFF 50 µs PF=1.0, IT=300 mA Critical State of Rise: Off-State Voltage dv(MT)/dt 10,000 2000 V/µs V/µs VRM, VDM=400 VAC, TA=25°C VRM, VDM=400 VAC, TA=25°C Commutating Voltage dv(COM)/dt 10,000 V/µs V/µs VRM, VDM=400 VAC, TA=25°C VRM, VDM=400 VAC, TA=25°C IT=300 mA 2000 1.3 Off-State Current di/dt 100 A/ms Thermal Resistance, Junction to Lead RTHJL 150 °C/W Package Critical Rate of Rise of Coupled Input-Output Voltage dv(IO)/dt 5000 V/µs IT=0 A, VRM=VDM=300 VAC Common Mode Coupling Capacitor Package Capacitance CCM 0.01 pF CIO 0.8 pF f=1 MHz, VIO=0 V Figure 2. Forward voltage versus forward current Figure 1. LED forward current vs. forward voltage IL4216/4217/4218 5–2 Power Factor Considerations Figure 3. Peak LED current vs. duty factor, Tau A snubber isn’t needed to eliminate false operation of the TRIAC driver because of the IL411’s high static and commutating dv/dt with loads between 1 and 0.8 power factors. When inductive loads with power factors less than 0.8 are being driven, include a RC snubber or a single capacitor directly across the device to damp the peak commutating dv/dt spike. Normally a commutating dv/dt causes a turning-off device to stay on due to the stored energy remaining in the turning-off device. But in the case of a zero voltage crossing optotriac, the commutating dv/dt spikes can inhibit one half of the TRIAC from turning on. If the spike potential exceeds the inhibit voltage of the zero cross detection circuit, half of the TRIAC will be heldoff and not turn-on. This hold-off condition can be eliminated by using a snubber or capacitor placed directly across the optotriac as shown in Figure 7. Note that the value of the capacitor increases as a function of the load current. Figure 4. Maximum LED power dissipation The hold-off condition also can be eliminated by providing a higher level of LED drive current. The higher LED drive provides a larger photocurrent which causer. the phototransistor to turn-on before the commutating spike has activated the zero cross network. Figure 8 shows the relationship of the LED drive for power factors of less than 1.0. The curve shows that if a device requires 1.5 mA for a resistive load, then 1.8 times (2.7 mA) that amount would be required to control an inductive load whose power factor is less than 0.3. Figure 7. Shunt capacitance versus load current versus power factor Figure 5. On-state terminal voltage vs. terminal current Figure 6. Maximum output power dissipation Figure 8. Normalized LED trigger current versus power factor IL4216/4217/4218 5–3