BBY51... Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY51 BBY51-02L BBY51-02W BBY51-03W 3 D 2 D 1 1 1 2 2 Type BBY51 BBY51-02L* BBY51-02W BBY51-03W Package SOT23 TSLP-2-1 SCD80 SOD323 Configuration common cathode single, leadless single single LS(nH) 2 0.4 0.6 1.8 Marking S3s II II H * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 7 V Forward current IF 20 mA Operating temperature range Top -55 ... 125 °C Storage temperature Tstg -55 ... 150 1 Value Unit Dec-15-2003 BBY51... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 6 V - - 10 VR = 6 V, T A = 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 5.05 5.4 5.75 VR = 2 V, f = 1 MHz 3.4 4.2 5.2 VR = 3 V, f = 1 MHz 2.7 3.5 4.6 VR = 4 V, f = 1 MHz 2.5 3.1 3.7 CT1/C T4 1.55 1.75 2.2 C1V-C 3V 1.4 1.78 2.2 C3V-C 4V 0.3 0.5 0.7 - 0.37 - Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference pF VR = 1 V, f = 1 MHz, VR = 4 V Capacitance difference VR = 3 V, f = 1 MHz, VR = 4 V Series resistance rS Ω VR = 1 V, f = 1 GHz 2 Dec-15-2003 BBY51... Diode capacitance CT = ƒ (VR) Temperature coefficient of the diode f = 1MHz capacitance TCc = ƒ (VR) pF 1/°C 8 TCc CT 10 -3 EHD07128 10 6 10 -4 4 2 0 0 2 4 V VR 10 -5 1 6 2 3 4 5 6 V 8 VR 3 Dec-15-2003