PD - 5.061B PRELIMINARY GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved VCES = 1200V VCE(on) typ. = 2.3V @VGE = 15V, IC = 200A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current‚ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. Units 1200 200 400 400 400 ±20 2500 1040 540 -40 to +150 -40 to +125 V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS www.irf.com Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module Typ. Max. — — 0.1 — — 400 0.12 0.20 — 4.0 3.0 — Units °C/W N. m g 1 3/20/98 GA200TD120U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units Conditions 1200 — — VGE = 0V, IC = 1mA — 2.3 2.8 VGE = 15V, IC = 200A — 2.1 — V VGE = 15V, IC = 200A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 IC = 2.5mA DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 2.5mA gfe Forward Transconductance — 261 — S VCE = 25V, IC = 200A ICES Collector-to-Emitter Leaking Current — — 2.0 mA VGE = 0V, VCE = 1200V — — 20 VGE = 0V, VCE = 1200V, TJ = 125°C Diode Forward Voltage - Maximum — 3.2 4.1 V IF = 200A, VGE = 0V VFM — 3.1 — IF = 200A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — 500 nA VGE = ±20V V(BR)CES VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt 2 Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 1660 2490 VCC = 400V VGE = 15V 280 420 nC IC = 249A 550 825 TJ = 25°C 636 — RG1 = 15Ω, RG2 = 0Ω, 201 — ns IC = 200A 650 — VCC = 720V 341 — VGE = ±15V 44 — mJ 44 — 88 130 37343 — VGE = 0V 1660 — pF VCC = 30V 322 — ƒ = 1 MHz 196 — ns IC = 200A 131 — A RG1 = 15Ω 12833 — nC RG2 = 0Ω 1740 — A/µs VCC = 720V di/dt»1294A/µs www.irf.com GA200TD120U 120 F or b oth: D uty c y c le : 50 % T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified LOAD CURRENT (A) 100 P ow er D is s ipation = 160 W 80 S q u a re w a v e: 60 60% of rated v oltage 40 I 20 Ide a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector Current (A) TJ = 125 ° C TJ = 25 °C V GE = 15V 80µs PULSE WIDTH 1.5 2.0 2.5 3.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com TJ = 125 ° C 100 100 10 1.0 I C , Collector-to-Emitter Current (A) 1000 1000 TJ = 25 ° C 10 1 5.0 V CE = 25V 80µs PULSE WIDTH 6.0 7.0 8.0 9.0 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 GA200TD120U 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 250 200 150 100 50 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 400 A IC = 200 A 2.0 IC = 100 A 1.0 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature T h erm al R e sp o ns e (Zth JC ) 1 0.1 D = 0.50 0.20 0.10 0.01 0.001 0.0001 PDM 0.05 0.02 0.01 t 1 t2 S IN G LE P U LS E (TH E R M A L R E S P O N S E ) Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 10 100 A 1000 t 1 , R e cta n g u la r P u ls e D u ra tio n (s e c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA200TD120U VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 60000 Cies 50000 40000 30000 Coes 20000 Cres 10000 20 VGE , Gate-to-Emitter Voltage (V) 70000 0 1 10 16 12 8 4 0 100 0 VCE , Collector-to-Emitter Voltage (V) 1000 = 720V = 15V = 125 ° C = 200A 120 110 100 90 80 0 10 20 30 40 ( Ω) RG , Gate Resistance (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 800 1200 1600 2000 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) V CC V GE TJ 130 IC 400 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 140 VCC = 400V I C = 249A 200A 50 Ω;RG2 = 0 Ω RG = Ohm G1=15 VGE = 15V VCC = 720V IC = 400 A IC = 200 A 100 IC = 100 A 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature °( C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 GA200TD120U 500 Ω;RG2 = 0 Ω RG = Ohm G1=15 T J = 150° C VCC = 720V 160 VGE = 15V 120 80 40 300 100 200 300 SAFE OPERATING AREA 200 100 0 0 V G E = 20V T J = 125°C V C E m easured at term inal (Peak Voltage) 400 IC , Collector Current ( A) Total Switching Losses (mJ) 200 A 0 400 0 I C , Collector Current (A) 200 400 600 800 1000 1200 1400 VCE , Collector-to-Em itter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA 1000 20000 IF = 200A 16000 T J = 125°C QRR - ( nC) Instantaneous Forward Current - IF ( A ) I F = 400A 100 T J = 25°C 12000 8000 4000 10 1.0 2.0 3.0 4.0 5.0 F orward V oltag e D ro p - V F M (V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 I F = 100A 0 500 VR = 72 0V T J = 1 25 °C T J = 2 5°C 1000 1500 di f /dt - (A/µ s) 2000 Fig. 14 - Typical Stored Charge vs. dif/dt www.irf.com GA200TD120U 400 250 VR = 72 0V T J = 1 25 °C T J = 2 5°C I F = 400A I F = 200A 200 I F = 100A 300 I F = 400A IRRM - ( A ) trr - ( ns ) I F = 200A 200 150 I F = 100A 100 100 50 0 500 VR = 7 20V T J = 1 25 °C T J = 2 5°C 1000 1500 di f /dt - (A/µ s) 2000 Fig. 15 - Typical Reverse Recovery vs. dif/dt www.irf.com 0 500 1000 1500 2000 di f /dt - (A/µ s) Fig. 16 - Typical Recovery Current vs. dif/dt 7 GA200TD120U 90% V ge +V ge V ce Ic 90% Ic 10% V ce Ic 5% Ic td (off) tf E off = ∫ Vce Ic dt t1+5µ S V ce ic dt t1 Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g trr Q rr = Ic trr id Ic dtdt tx ∫ +V g tx 10% V c c 10% Irr Vcc D U T V O LT A G E AND CURRENT Vce V pk Irr Vcc 10% Ic Ipk 90% Ic Ic D IO D E R E C O V E R Y W AVEFORMS tr td(on) 5% V c e t1 ∫ t2 c e ieIcdt dt E on = VVce t1 t2 E rec = D IO D E R E V E R S E RECOVERY ENERG Y t3 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 VVc d idIcdt dt t3 t4 Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com GA200TD120U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* R L= 600V 4 X IC @25°C 0 - 600V 50V 600 0µ F 100 V Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 19. Pulsed Collector Current Test Circuit 9 GA200TD120U Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 50µs; single shot. Case Outline — DOUBLE INT-A-PAK Dimensions are shown in millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98 10 www.irf.com