BAL74 Silicon Switching Diode 3 For high-speed switching applications 2 1 3 VPS05161 2 EHA00001 Type Marking BAL74 JCs Pin Configuration 1 = n.c. 2=A Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM 50 Forward current IF 250 mA Surge forward current, t = 1 s IFS 4.5 A Total power dissipation, TS = 54 °C Ptot 370 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 260 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-27-2001 BAL74 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 50 - - VF - - 1 IR - - 0.1 IR - - 100 CD - - 2 pF t rr - - 4 ns DC characteristics Breakdown voltage V(BR) V I(BR) = 100 µA Forward voltage IF = 100 mA Reverse current µA VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 10 mA, IR = 10 mA, R L = 100 , measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00013 Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph: R = 50, tr = 0.35ns, C 1pF 2 Jul-27-2001 BAL74 Forward current IF = f (TS ) Reverse current IR = f (TA) BAL 74 5 300 EHB00002 10 nA mA ΙR V R = 70 V 10 4 max. 5 150 10 3 IF 200 70 V 25 V 5 100 typ. 10 2 5 50 0 0 15 30 45 60 75 90 105 120 °C 10 1 0 150 50 100 TS Peak forward current IFM = f (t p) TA = 25°C TA = 25°C ΙF BAL 74 150 TA Forward current IF = f (VF ) 150 ˚C EHB00003 10 2 Ι FM mA BAL 74 EHB00004 D = 0.005 0.01 0.02 0.05 0.1 0.2 A 10 1 100 typ 10 0 max 50 10 -1 tp D= tp T T 0 0 0.5 1.0 V 10-2 10-6 1.5 VF 10-5 10-4 10-3 10-2 10-1 s 100 t 3 Jul-27-2001 BAL74 Forward voltage VF = f (TA) 1.0 BAL 74 V EHB00005 Ι F = 100 mA VF 10 mA 1 mA 0.5 0.1 mA 0 0 50 100 ˚C 150 TA 4 Jul-27-2001