BSP 316 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 316 -100 V -0.65 A 2.2 Ω SOT-223 BSP 316 Type BSP 316 Ordering Code Q67000-S92 D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 kΩ -100 Unit V -100 Gate source voltage VGS Continuous drain current ID TA = 24 °C ± 20 A -0.65 IDpuls DC drain current, pulsed TA = 25 °C -2.6 Ptot Power dissipation TA = 25 °C Semiconductor Group Values W 1.8 1 Sep-12-1996 BSP 316 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 70 Therminal resistance, junction-soldering point 1) RthJS ≤ 10 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = -0.25 mA, Tj = 25 °C V -100 - - -0.8 -1.1 -2 VDS = -100 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -100 V, VGS = 0 V, Tj = 125 °C - -10 -100 VDS = -60 V, VGS = 0 V, Tj = 25 °C - - -100 Gate threshold voltage VGS(th) VGS=VDS, ID = -1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = -20 V, VDS = 0 V Drain-Source on-state resistance Semiconductor Group -10 -100 Ω RDS(on) - 2 nA nA - VGS = -10 V, ID = -0.65 A µA 1.4 2.2 Sep-12-1996 BSP 316 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = -0.65 A Input capacitance 0.25 pF - 280 370 - 75 110 - 25 40 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 0.45 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω Rise time - 8 12 - 30 45 - 80 110 - 95 130 tr VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω Turn-off delay time td(off) VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω Fall time tf VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Ω Semiconductor Group 3 Sep-12-1996 BSP 316 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - -0.65 - - -2.6 VSD VGS = 0 V, IF = -1.3 A, Tj = 25 °C Semiconductor Group - ISM TA = 25 °C Inverse diode forward voltage A V - 4 -1 -1.3 Sep-12-1996 BSP 316 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V 2.0 -0.70 A W -0.60 Ptot 1.6 ID -0.55 -0.50 1.4 -0.45 1.2 -0.40 1.0 -0.35 -0.30 0.8 -0.25 0.6 -0.20 0.4 -0.15 -0.10 0.2 -0.05 0.00 0.0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 TA 120 °C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T parameter : D = 0, TC=25°C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 316 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs -1.5 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 7.0 Ptot = 2W A l k ji h Ω g -1.3 ID -1.2 a -2.0 -1.1 f b -2.5 c -3.0 d -3.5 e -4.0 f -4.5 g -5.0 h -6.0 i -7.0 d j -8.0 2.5 k -9.0 2.0 l -10.0 -0.9 e -0.8 -0.7 -0.6 -0.5 -0.4 c c d e f 6.0 VGS [V] -1.0 a b RDS (on) 5.5 5.0 4.5 4.0 3.5 3.0 g h i kj l 1.5 -0.3 -0.2 1.0 V [V] = GS b a -0.1 0.0 0.0 -1.0 -2.0 -3.0 -4.0 0.5 0.0 V -6.0 0.0 a b c d e f -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -0.2 -0.4 -0.6 g h i j -5.0 -6.0 -7.0 -8.0 -0.8 -1.0 VDS -1.3 Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, -3.0 0.75 A S -2.6 0.65 gfs -2.4 0.60 -2.2 0.55 -2.0 0.50 -1.8 0.45 -1.6 0.40 -1.4 0.35 -1.2 0.30 -1.0 0.25 -0.8 0.20 -0.6 0.15 -0.4 0.10 -0.2 0.0 0.05 0.00 0 A ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs ID k l -9.0 -10.0 -1 -2 -3 Semiconductor Group -4 -5 -6 -7 -8 V VGS -10 6 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 A ID -2.6 Sep-12-1996 BSP 316 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -0.65 A, VGS = -10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA 7.0 -4.6 Ω V 6.0 -4.0 RDS (on) 5.5 VGS(th) 5.0 -3.6 -3.2 4.5 -2.8 4.0 -2.4 3.5 98% 98% 3.0 -2.0 2.5 -1.6 typ 2.0 typ -1.2 2% 1.5 -0.8 1.0 -0.4 0.5 0.0 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 Tj °C 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 4 -10 1 pF A C IF 10 3 -10 0 Ciss 10 2 -10 -1 Tj = 25 °C typ Coss Tj = 150 °C typ Tj = 25 °C (98%) Crss 10 1 0 -5 -10 Semiconductor Group -15 -20 -25 -30 V VDS Tj = 150 °C (98%) -40 -10 -2 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD 7 Sep-12-1996 BSP 316 Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) parameter : D = 0.01, TC=25°C -120 V -116 -114 V(BR)DSS -112 -110 -108 -106 -104 -102 -100 -98 -96 -94 -92 -90 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 Sep-12-1996 BSP 316 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996