HITFET® BSP 75 Smart Lowside Power Switch Features Product Summary Continuous drain source voltage On-state resistance Current limitation Nominal load current Clamping energy • Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart) • Overload protection • Short circuit protection • Overvoltage protection • Current limitation VDS RDS(ON) ID(lim) ID(Nom) EAS 55 550 1 0.7 550 V mΩ A A mJ Application • All kinds of resistive, inductive and capacitive loads in switching applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. V bb + LOAD M Drain 2 Overvoltage protection dv/dt 1 IN limitation Short circuit protection Overtemperature protection ESD Short circuit Current protection limitation Source 3 HITFET 4 Pin Symbol Function 1 IN Input 2 DRAIN Output to the load 3 SOURCE Ground TAB SUBSTRATE Must be connected to Pin 3 Semiconductor Group Page 1 of 9 1998-02-04 HITFET® BSP 75 Maximum Ratings at Tj=25°C unless otherwise specified Parameter Continuous drain source voltage (overvoltage protection see page 4) Drain source voltage for short circuit protection Load dump protection VLoadDump=UP+US; UP=13.5 V RI1)=2 Ω; td=400ms; IN=low or high (8V) RL=50 Ω RI=2 Ω; td=400ms; IN=high (8V) RL=22 Ω Continuous input voltage Peak input voltage Operating temperature range Storage temperature range Power dissipation (DC) Unclamped single pulse inductive energy ID(ISO) = 0.7 A Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VDS Thermal resistance RthJS RthJA junction soldering point: junction - ambient 3): Values VDS 55 Unit V 32 V VLoadDump2) VIN VIN Tj Tstg Ptot EAS V 80 47 -0.2 ... +10 -0.2 ... +20 -40 ...+150 -55 ...+150 1.8 550 W mJ 4000 V VESD V V °C E 40/150/56 ≤10 ≤70 K/W 1) RI=internal resistance of the load dump test pulse generator LD200 VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. 3) Device on epoxy pcb 40mm x 40 mm x 1.5mm with 6cm 2 copper area for pin 4 connection 2) Semiconductor Group Page 2 1998-02-04 HITFET® BSP 75 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, unless otherwise specified Static Characteristics Drain source clamp voltage ID = 10 mA Tj =-40...+150°C: Off state drain current VIN = 0 V, VDS = 32 V Tj =-40...+150°C: Input threshold voltage ID = 10 mA Input current normal operation, ID<ID(lim): VIN = 5 V current limitation mode, ID=ID(lim): after thermal shutdown, ID=0 A: On-state resistance ID = 0.7 A, VIN = 5 V Tj=25°C: Tj=150°C: On-state resistance ID = 0.7 A, VIN = 10 V Tj=25°C: Tj=150°C: Nominal load current VBB = 12 V, VDS = 0.5 V, TS = 85°C Tj < 150°C Current limit VIN = 10 V, VDS = 12 V Dynamic characteristics Turn-on time VIN to 90% ID: RL = 22 Ω, VIN= 0 to 10 V, V bb= 12 V Turn-off time VIN to 10% I D: RL = 22 Ω, VIN= 10 to 0 V, V bb= 12 V Slew rate on 70 to 50% V bb: RL = 22 Ω, VIN = 0 to 10 V, V bb = 12 V Slew rate off 50 to 70% V bb: RL = 22 Ω, VIN= 10 to 0 V, V bb= 12 V Semiconductor Group Page 3 VDS(AZ) Values min typ max Unit 55 -- 70 V -- -- 5 µA 2 --1000 2.5 100 200 1500 3 200 300 2000 V µA RDS(on) --- 550 850 675 1350 mΩ RDS(on) 475 750 -- 550 1000 -- mΩ ID(Nom) --0.7 ID(lim) 1 1.5 1.9 A ton -- 10 20 µs toff -- 10 20 µs -dVDS/dt on -- 4 10 V/µs dVDS/dt off -- 4 10 V/µs IDSS VIN(th) IIN(1) IIN(2) IIN(3) A 1998-02-04 HITFET® BSP 75 Parameter and Conditions Symbol at Tj = 25 °C, unless otherwise specified Protection Functions Thermal overload trip temperature Tjt Thermal hysteresis ∆Tjt Unclamped single pulse inductive energy ID(ISO)=0.7 A, Vbb=32 V Tj=25 °C EAS Tj=150 °C Inverse Diode Continuous source drain voltage VIN = 0 V, -ID = 2*0.7 A VSD Values min typ max Unit 150 -- 165 10 --- °C K 550 200 --- --- mJ -- 1 -- V Circuit Description The BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions. It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications. Protection functions • Overvoltage protection: An internal clamp limits the output voltage at VDS(AZ) (about 63 V) when inductive loads are switched off. • Current limitation: By means of an internal current measurement the drain current is limited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. This operation leads to an increasing junction temperature until the overtemperature threshold is reached. • Overtemperature and short circuit protection: This protection is based on sensing the chip temperature. The location of the sensor ensures a fast and accurate junction temperature detection. Overtemperature shutdown occurs at minimum 150 °C. A hysteresis of typ. 10 K enables an automatical restart by cooling. The device is ESD protected according Human Body Model (4 kV) and load dump protected (see Maximum Ratings). Semiconductor Group Page 4 1998-02-04 HITFET® BSP 75 Block diagram Inductive and overvoltage output clamp Terms V D Z RL S 2 I IN 1 D IN ID VDS HITFET Vbb HITFET S 3 VIN VIN Input circuit (ESD protection) VDS(AZ) VDS IN ESD-ZD I VBB Source t ESD zener diodes are not designed for DC current. Turn on into overload or short circuit VIN ID ID(lim) t Shut down by overtemperature and restart by cooling. Current internally limited at I D(lim). Semiconductor Group Page 5 1998-02-04 HITFET® BSP 75 Maximum allowable power dissipation Ptot = f (TC) On-state resistance RON = f (Tj); ID= 0.7 A; VIN= 10 V Ptot [W] RON [mΩ] 2 1 000 1.8 900 1.6 800 1.4 700 1.2 600 1 500 0.8 400 0.6 300 0.4 200 0.2 100 0 m a x. typ . 0 0 25 50 75 10 0 125 150 -50 -2 5 0 25 50 75 100 125 TC [°C] 150 Tj [°C] On-state resistance RON = f (Tj); ID= 0.7 A; VIN= 5 V Typ. input threshold voltage VIN(th) = f (Tj); ID= 10 mA; VDS= 12 V RON [mΩ] VIN(th) [V] 3 1 400 1 200 2.5 1 000 2 m a x. 800 1.5 600 typ . 1 400 0.5 200 0 0 -50 -2 5 0 25 50 75 100 125 150 Tj [°C] Semiconductor Group Page 6 -50 -25 0 25 50 75 1 00 12 5 150 Tj [°C] 1998-02-04 HITFET® BSP 75 Typ. on-state resistance RON = f (VIN) ID= 0.7 A; Tj= 25°C Typ. current limitation ID(lim) = f (Tj); VDS=12V, VIN= 10V RON [mΩ] ID(lim) [A] 1.5 2 000 1.4 1 500 1.3 1 000 1.2 500 1.1 1 0 0 2 4 6 8 -50 10 -25 0 25 50 75 1 00 12 5 150 Tj [°C] VIN [V] Transient thermal impendance ZthJC = f (tp) Parameter: D=tp/T ZthJC [K/W] Typ. short circuit current ID(SC) = f (VIN); VDS=12V, Tj= 25°C ID(SC) [A] 1 E+ 2 1.6 D= 0.5 1.4 0.2 1 E+ 1 1.2 0.1 0.05 1 0.01 1 E+ 0 0.8 0.02 P tot 0.005 tp 0.6 t T 1E-1 0.4 0.2 0 VIN [V] Semiconductor Group Page 7 1E+4 1E+3 1E+2 1E+1 1E+0 10 1E-1 8 1E-2 6 1E-3 4 1E-4 2 1E-5 0 1E-6 1E-2 0 tp [s] 1998-02-04 HITFET® BSP 75 Application examples: Status signal of thermal shutdown by monitoring input current R St IN µC VIN D HITFET Vbb S ∆V VIN thermal shutdown Semiconductor Group Page 8 1998-02-04 HITFET® BSP 75 Package and ordering code all dimensions in mm SOT223/4 Ordering code Q67060-S7200-A2 BSP75 Definition of soldering point with temperature Ts: upper side of solder edge of device pin 4. Pin 4 Semiconductor Group Page 9 1998-02-04