D a t a S h e e t , V 2 .0 , J u n e 2 0 0 5 BTS 5230GS Smart High-Side Power Switch PROFET Two Channels, 140 mΩ Automotive Power N e v e r s t o p t h i n k i n g . Smart High-Side Power Switch BTS 5230GS Table of Contents Page Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.1 Pin Assignment BTS 5230GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10 4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5 Package Outlines BTS 5230GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 Data Sheet 2 V2.0, 2005-06-13 Smart High-Side Power Switch PROFET BTS 5230GS Product Summary P-DSO-14-18 The BTS 5230GS is a dual channel high-side power switch in P-DSO-14-18 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Operating voltage Vbb(on) 4.5 .. 28 V Over voltage protection Vbb(AZ) RDS(ON) 41 V 1.8 A Current limitation repetitive IL(nom) IL(LIM) IL(SCr) Standby current for whole device with load Ibb(OFF) 2.5 µA On-State resistance Nominal load current (one channel active) Current limitation 140 mΩ 8A 3A Basic Features • • • • • • • Very low standby current 3.3 V and 5 V compatible logic pins Improved electromagnetic compatibility (EMC) Stable behaviour at undervoltage Logic ground independent from load ground Secure load turn-off while logic ground disconnected Optimized inverse current capability Type Ordering Code Package BTS 5230GS Q67065-S6135 P-DSO-14-18 Data Sheet 3 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Protective Functions • • • • • • • • • Reverse battery protection without external components (GND resistor integrated) Short circuit protection Overload protection Multi-step current limitation Thermal shutdown with restart Thermal restart at reduced current limitation Overvoltage protection without external resistor Loss of ground protection Electrostatic discharge protection (ESD) Diagnostic Functions • • • • • Enable function for diagnosis pins (IS1 and IS2) Proportional load current sense signal by current source Open load detection in ON-state by load current sense Open load detection in OFF-state by voltage source Feedback on over temperature and current limitation in ON-state Applications • µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads • All types of resistive, inductive and capacitve loads • Suitable for loads with high inrush currents, so as lamps • Suitable for loads with low currents, so as LEDs • Replaces electromechanical relays, fuses and discrete circuits Data Sheet 4 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Overview 1 Overview The BTS 5230GS is a dual channel high-side power switch (two times 140 mΩ) in P-DSO-14-18 package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense function and open load in off state. The diagnosis signals can be switched on and off by the sense enable pin SEN. An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2, SEN) reduce external components to a minimum. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The inputs are ground referenced CMOS compatible. The device is monolithically integrated in Smart SIPMOS technology. 1.1 Block Diagram VBB channel 1 load current sense internal power supply logic IS1 gate control & charge pump open load detection IN1 ESD protection temperature sensor SEN clamp for inductive load multi step load current limitation OUT1 channel 2 IN2 IS2 control and protection circuit equivalent to channel 1 OUT2 RGND GND Figure 1 Data Sheet Block Diagram 5 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Overview 1.2 Terms Following figure shows all terms used in this data sheet. Vbb Ibb IIN1 IIN2 VIN1 VIN2 IIS1 IIS2 VIS1 VIS2 ISEN IN1 VBB IN2 IS1 OUT1 SEN V DS1 VOUT1 BTS 5230GS OUT2 IS2 I L1 I L2 V DS2 V OUT2 GND VSEN IGND Terms2ch.emf Figure 2 Terms Symbols without channel number are channel related and valid for each channel separately Data Sheet 6 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Pin Configuration 2 Pin Configuration 2.1 Pin Assignment BTS 5230GS (top view) Figure 3 VBB 1 14 VBB GND 2 13 OUT1 IN1 3 12 OUT1 IS1 4 11 OUT2 IS2 5 10 OUT2 IN2 6 9 SEN VBB 7 8 VBB Pin Configuration P-DSO-14-18 2.2 Pin Definitions and Functions Pin Symbol I/O OD Function 3 IN1 I Input signal for channel 1 6 IN2 I Input signal for channel 2 4 IS1 O Diagnosis output signal channel 1 5 IS2 O Diagnosis output signal channel 2 9 SEN I Sense Enable input for channel 1&2 12, 13 OUT1 O Protected high-side power output channel 1 10, 11 OUT2 O Protected high-side power output channel 2 2 GND - Ground connection 1, 7, 8, 14 VBB - Positive power supply for logic supply as well as output power supply Data Sheet 7 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Electrical Characteristics 3 Electrical Characteristics 3.1 Maximum Ratings Stresses above the ones listed here may cause permanent damage to the device. Exposure to maximum rating conditions for extended periods may affect device reliability. Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values min. Unit Test Conditions max. Supply Voltage -16 28 V Supply voltage for full short Vbb(SC) circuit protection (single pulse) (Tj = -40°C .. 150°C) 0 20 V VDS Supply Voltage for Load Dump Vbb(LD) - 52 V 40 V 3.1.1 Supply voltage 3.1.2 3.1.3 3.1.4 Vbb Voltage at power transistor protection L = 8 µH R = 0.2 Ω 1) RI = 2 Ω 2) RL = 12 Ω Power Stages 3.1.5 Load current 3.1.6 Maximum energy dissipation single pulse 3.1.7 Power dissipation (DC) IL EAS - IL(LIM) A 0.1 J 3) 4) IL(0) = 2.1 A Tj(0) = 150°C Ptot - 0.9 W 5) Ta = 85 °C Tj ≤ 150 °C Logic Pins 3.1.8 3.1.9 Voltage at input pin Current through input pin 3.1.10 Voltage at sense enable pin VIN -5 -16 10 IIN -2.0 -8.0 2.0 VSEN -5 -16 10 -2.0 -8.0 2.0 -25 10 3.1.11 Current through sense enable ISEN pin 3.1.12 Current through sense pin Data Sheet IIS 8 V t ≤ 2 min mA t ≤ 2 min V t ≤ 2 min mA t ≤ 2 min mA V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Electrical Characteristics Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values min. Unit Test Conditions max. Temperatures 3.1.13 Junction Temperature 3.1.14 Dynamical temperature increase while switching 3.1.15 Storage Temperature Tj ∆Tj -40 150 °C - 60 °C Tstg -55 150 °C ESD Susceptibility 3.1.16 ESD susceptibility HBM VESD IN, SEN IS OUT kV -1 -2 -4 1 2 4 according to EIA/JESD 22-A 114B 1) R and L describe the complete circuit impedance including line, contact and generator impedances 2) RI is the internal resistance of the Load Dump pulse generator 3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. 4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse 5) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. Data Sheet 9 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics 4 Block Description and Electrical Characteristics 4.1 Power Stages The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge pump. 4.1.1 Output On-State Resistance The on-state resistance depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance RDS(ON). The on-state resistance in reverse polarity mode is described in Section 4.2.2. 240 220 200 180 160 140 120 100 80 60 -50 -25 Tj = 25°C 240 220 RDS(ON) /mΩ RDS(ON) /mΩ Vbb = 13.5 V 4.1.2 180 160 140 120 100 0 25 50 75 100 125 150 0 T /°C Figure 4 200 5 10 15 Vbb /V 20 25 Typical On-State Resistance Input Circuit Figure 5 shows the input circuit of the BTS 5230GS. There is an integrated input resistor that makes external components obsolet. The current source to ground ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. IN RIN IIN RGND GND Input.emf Figure 5 Data Sheet Input Circuit (IN1 and IN2) 10 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission. IN VOUT tON tOFF t 90% 70% 70% dV /dtON dV /dtON 30% 30% 10% t Figure 6 4.1.3 SwitchOn.emf Switching a Load (resistive) Inductive Output Clamp When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potenial, because the inductance intends to continue driving the current. V bb VBB IL GND OUT V OUT L, RL OutputClamp .em Figure 7 Output Clamp (OUT1 and OUT2) To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited. Data Sheet 11 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics V OUT IN = 5V IN = 0V Vbb t V OUT(CL) IL t Figure 8 InductiveLoad.emf Switching an Inductance Maximum Load Inductance While demagnization of inductive loads, energy has to be dissipated in the BTS 5230GS. This energy can be calculated with following equation: V OUT(CL) V bb L - ⋅ ln 1 – ---------------------E = ( V bb – V OUT(CL) ) ⋅ ---------------------- + I L ⋅ -----RL RL V OUT(CL) Following equation simplifies under the assumption of RL = 0: V bb 2 1 E = --- LI L ⋅ 1 – ---------------------- 2 V OUT(CL) The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 9 for the maximum allowed energy dissipation. Vbb = 12 V 0.5 0.4 0.3 EAS /J 0.2 0.1 0.05 0.04 0.03 0.02 0.01 1 Figure 9 Data Sheet 2 3 IL /A 4 5 Maximum energy dissipation single pulse, Tj,Start = 150°C 12 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics 4.1.4 Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. Unit Test Conditions V VIN = 4.5 V, RL = 12 Ω, VDS < 0.5 V VIN = 5 V max. General Vbb 4.1.1 Operating voltage 4.1.2 Operating current IGND one channel active two channels active 4.1.3 Standby current for whole device with load 4.5 28 mA 2.0 3.8 4 8 Ibb(OFF) µA 1.5 2.5 2.5 10 VIN = 0 V, VSEN = 0 V, Tj = 25°C, Tj=85°C1) Tj = 150°C Output characteristics 4.1.4 On-State resistance per channel RDS(ON) 140 260 4.1.5 Output voltage drop VDS(NL) limitation at small load currents 4.1.6 Nominal load current per channel one channel active two channels active IL(nom) 4.1.7 Output clamp 4.1.8 Output leakage current per channel VOUT(CL) IL(OFF) 4.1.9 Inverse current capability Data Sheet mΩ 40 mV IL = 2.5 A Tj = 25 °C Tj = 150 °C IL < 0.15 A A Ta = 85 °C Tj ≤ 150 °C 2) 3) IL = 40 mA VIN = 0 V 1.8 1.3 -16 -IL(inv) -13 -10 V 0.1 4 µA 2 13 A 1) V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Block Description and Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. Unit Test Conditions K/W 1) K/W 1) 2) max. Thermal Resistance 4.1.10 Junction to case 4.1.11 Junction to ambient 2) one channel active all channels active Rthjc Rthja 48 75 71 Input characteristics 4.1.12 Input resistance 4.1.13 L-input level 4.1.14 H-input level 4.1.15 Input hysteresis 4.1.16 L-input current 4.1.17 H-input current RIN VIN(L) VIN(H) ∆VIN IIN(L) IIN(H) 2.0 3.5 5.5 kΩ -0.3 1.0 V 2.6 5.7 V 0.25 V 1) VIN = 0.4 V VIN = 5 V 3 18 75 µA 10 38 75 µA Timings 4.1.18 Turn-on time to 90% VOUT tON 80 250 µs 4.1.19 Turn-off time to 10% VOUT tOFF 100 250 µs 4.1.20 slew rate 30% to 70% VOUT dV/ dtON 0.1 0.3 0.5 V/µs 4.1.21 slew rate 70% to 30% VOUT -dV/ dtOFF 0.1 0.26 0.5 V/µs RL = 12 Ω, Vbb = 13.5 V RL = 12 Ω, Vbb = 13.5 V RL = 12 Ω, Vbb = 13.5 V RL = 12 Ω, Vbb = 13.5 V 1) Not subject to production test, specified by design 2) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air 3) Not subject to production test, parameters are calculated from RDS(ON) and Rth Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Data Sheet 14 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS 4.2 Protection Functions The device is fully protected by embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation. 4.2.1 Over Load Protection The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are three steps of current limitation which are selected automatically depending on the voltage VDS across the power DMOS. Please note that the voltage at the OUT pin is Vbb - VDS. Please refer to following figure for details. IL 10 8 6 4 2 5 Figure 10 10 15 20 VDS CurrentLimitation.emf Current Limitation (minimum values) Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. A temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. After cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for details. IN IL t IL(LIM) IL(SCr) t IIS t Figure 11 OverLoad .emf Shut Down by Over Temperature In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart, the current limitation level is reduced to IL(SCr). The current limitation level is reset to IL(LIM) by switching off the device (VIN = 0 V). Data Sheet 15 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS 4.2.2 Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following fomular for estimation of total power dissipation Pdiss(rev) in reverse polarity mode. 2 Pdiss(rev) = ∑ V bb ( V DS(rev) ⋅I L ) + -------------R GND The reverse current through the intrinsic body diode has to be limited by the connected load. The current trough sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on Page 8). The over-temperature protection is not active during reverse polarity. 4.2.3 Over Voltage Protection In addition to the output clamp for inductive loads as described in Section 4.1.3, there is a clamp mechanism for over voltage protection. Because of the integrated ground resistor, over voltage protection does not require external components. As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor opens and the voltage across logic part is clamped. As a result, the internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of the connected circuitry. IN ZDAZ RIN VBB IS SEN RSEN logic ZDESD RGND OUT V OUT GND OverVoltage .emf Figure 12 4.2.4 Over Voltage Protection Loss of Ground Protection In case of complete loss of the device ground connections, but connected load ground, the BTS 5230GS securely changes to or keeps in off state. Data Sheet 16 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS 4.2.5 Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. Unit Test Conditions VDS = 7 V VDS = 14 V max. Over Load Protection 4.2.1 4.2.2 Load current limitation IL(LIM) 16 A 5 10 A Repetitive short circuit IL(SCr) current limitation 4.2.3 Initial short circuit shut tOFF(SC) down time 4.2.4 Thermal shut down temperature Tj(SC) Thermal hysteresis ∆Tj 4.2.5 8 3 150 A 0.5 ms 170 °C 1) Tj = Tj(SC) TjStart = 25 °C 1) 1) 10 K 1) mV IL = -1.6 A, Vbb = -13.5 V, Tj = 150°C Vbb = -13.5 V 1) Reverse Battery 4.2.6 Drain-Source diode voltage (VOUT > Vbb) -VDS(rev) 4.2.7 Reverse current through GND pin -IGND 700 65 mA Ground Circuit 4.2.8 Integrated Resistor in RGND GND line 115 220 200 350 Ω 350 Ω Tj < 150°C Tj = 150°C 53 V Ibb = 2 mA 2 mA IIN = 0,1) 2) ISEN = 0, IIS = 0, IGND = 0 Over Voltage 4.2.9 Overvoltage protection Vbb(AZ) 41 47 Loss of GND 4.2.10 Output current while GND disconnected IL(GND) 1) Not subject to production test, specified by design 2) no connection at these pins Data Sheet 17 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS 4.3 Diagnosis For diagnosis purpose, the BTS 5230GS provides an Enhanced IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided as long as no failure mode (see Table 1) occures. In case of open load in off-state, VIS(fault) is fed to the diagnosis pin. S OL VBB IIS1 IN1 Rlim ROL gate control RIN1 IS1 0 1 1 0 OUT1 0 V IS(fault) 1 SEN µC VOUT(OL) RSEN channel 1 IN2 Rlim IL(PD) gate control RIN2 IS2 0 RIS1 RIS2 IIS2 diagnosis 1 OUT2 channel 2 GND load Sense.emf Figure 13 Block Diagram: Diagnosis Table 1 Truth Table Operation Mode Input Level Output Level Diagnostic Output SEN = H SEN = L GND Z Z GND Z Z Over-Temperature Z Z Z Short Circuit to Vbb Vbb VIS = VIS(fault) Z < VOUT(OL) > VOUT(OL) Z Z Z Normal Operation (OFF) Short Circuit to GND Open Load Data Sheet L (OFF-State) 18 VIS = VIS(fault) V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Table 1 Truth Table Operation Mode Input Level Output Level Diagnostic Output SEN = H SEN = L ~Vbb IIS = IL / kILIS Z < Vbb Z Z ~GND Z Z Over-Temperature Z Z Z Short Circuit to Vbb Vbb Vbb IIS < IL / kILIS Z Z Z Normal Operation (ON) H (ON-State) Current Limitation Short Circuit to GND Open Load L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit 4.3.1 ON-State Diagnosis The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio (kILIS = IL / IIS) depends on the temperature. Please refer to Figure 14 for details. Usually a resistor RIS is connected to the current sense pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ dummy Tj = 150°C dummy Tj = -40°C 3000 kILIS 2500 2000 1500 1000 500 0 0.5 1 1.5 2 2.5 IL /A Figure 14 1) Current sense ratio kILIS1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in Section 4.3.4 (Position 4.3.6). Data Sheet 19 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS In case of over-current as well as over-temperature, the current sense signal is switched off. As a result, one threshold is enough to distinguish between normal and faulty operation. Open load and over-load can be differentiated by switching off the channel and using open-load detection in off-state. Details about timings between the diagnosis signal IIS and the output voltgage VOUT and the load current IL in ON-state can be found in Figure 15. IN OFF ON t tON V OUT t IL tsIS(ON) IIS tsIS(LC) t t SwitchOn .emf Figure 15 4.3.2 Timing of Diagnosis Signal in ON-state OFF-State Diagnosis Details about timings between the diagnosis signal IIS and the output voltgage VOUT and the load current IL in OFF-state can be found in Figure 16. IN ON OFF t V OUT pull-up resistor inactive Open Load, pull-up resistor active IIS td(fault) ts(fault) t V IS(fault) / RS t SwitchOff.emf Figure 16 Timing of Diagnosis Signal in OFF-state For open load diagnosis in off state an external output pull-up resistor (ROL) is recommended. For calculation of the pull-up resistor, just the external leakage current Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account. Data Sheet 20 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS V bb(min) – V OUT(OL,max) R OL = ---------------------------------------------------------I leakage Ileakage defines the leakage current in the complete system e.g. caused by humidity. There is no internal leakage current from out to ground at BTS 5230GS. Vbb(min) is the minimum supply voltage at which the open load diagnosis in off state must be ensured. To reduce the stand-by current of the system, an open load resistor switch (SOL) is recommended. 4.3.3 Sense Enable Function The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN). See Figure 17 for details on the timing between SEN pin and diagnosis signal IIS. Please note that the diagnosis is enabled, when no signal is provided at pin SEN. SEN IIS tsIS(SEN) tdIS(SEN) tsIS(SEN) tdIS(SEN) t t Figure 17 SEN.emf Timing of Sense Enable Signal The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details. The resistors Rlim are recommended to limit the current through the sense pins IS1 and IS2 in case of reverse polarity and over-voltage. Please refer to maximum ratings on Page 8. The stand-by current of the BTS 5230GS is minimized, when both input pins (IN1 and IN2) and the sense enable pin (SEN) are on low level. Data Sheet 21 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS 4.3.4 Electrical Characteristics Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values min. typ. max. Unit Test Conditions Open Load at OFF state 4.3.1 Open load detection threshold voltage VOUT(OL) 2.0 3.2 4.4 V 4.3.2 Sense signal in case of open load VIS(fault) 3.5 5.0 6.5 V 4.3.3 Sense signal current limitation IIS(LIM) 4 4.3.4 Sense signal invalid after negative input slope td(fault) 1.2 ms 4.3.5 Fault signal settling time ts(fault) 200 µs mA VIN = 0 V VOUT = 12 V IIS = 1 mA VIS = 0 V VIN = 0 V VOUT = 12 V VIN = 5 V to 0 V VOUT = 12 V VIN = 0 V VOUT = 0 V to > VOUT(OL) IIS = 1 mA Load Current Sense 4.3.6 Current sense ratio kILIS IL = 0.04 A IL = 0.34 A IL = 0.6 A IL = 1.0 A IL = 2.6 A IL = 0.04 A IL = 0.34 A IL = 0.6 A IL = 1.0 A IL = 2.6 A 4.3.7 Current sense voltage VIS(LIM) limitation 4.3.8 IIS(LH) Current sense leakage/offset current Data Sheet VIN = 5 V Tj = -40 °C 500 1210 1210 1210 1220 1800 1490 1416 1410 1405 3100 1830 1645 1600 1590 900 1210 1210 1210 1220 1650 1490 1416 1410 1405 2400 1830 1645 1600 1590 5.0 5.9 7.5 V 5 µA 22 Tj = 150 °C IIS = 0.5 mA IL = 2.6 A VIN = 5 V IL = 0 A V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V (unless otherwise specified) typical values: Vbb = 13.5 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Unit Test Conditions 2 µA VSEN = 0 V IL = 2.6 A 4.3.10 Current sense settling tsIS(ON) time to IIS static ±10% after positive input slope 300 µs VIN = 0 V to 5 V IL = 1.6 A 4.3.11 Current sense settling tsIS(LC) time to IIS static ±10% after change of load current 50 min. 4.3.9 Current sense leakage, while diagnosis disabled typ. IIS(dis) max. 1) µs VIN = 5 V IL = 0.6 A to 1 1) Sense Enable RSEN VSEN(L) L-input level H-input level VSEN(H) L-input current ISEN(L) ISEN(H) H-input current Current sense settling tsIS(SEN) 4.3.12 Input resistance 2.0 4.3.13 4.3.14 4.3.15 4.3.16 4.3.17 3.5 5.5 kΩ -0.3 1.0 V 2.6 5.7 V 3 18 75 µA 10 38 75 µA 3 25 µs 25 µs time after positive SEN slope 4.3.18 Current sense tdIS(SEN) deactivation time after negative SEN slope 1) VSEN = 0.4 V VSEN = 5 V VSEN = 0 V to 5 V VIN = 0 V VOUT > VOUT(OL) VSEN = 5 V to 0 V IL = 2 A RS = 5 kΩ 1) Not subject to production test, specified by design Data Sheet 23 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Package Outlines BTS 5230GS 5 Package Outlines BTS 5230GS P-DSO-14-18 (Plastic Dual Small Outline Package) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm SMD = Surface Mounted Device Data Sheet 24 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Revision History 6 Revision History Version Date Changes V2.0 05-06-08 initial version Data Sheet 25 2005-06-13 Smart High-Side Power Switch BTS 5230GS Revision History Data Sheet 26 V2.0, 2005-06-13 Smart High-Side Power Switch BTS 5230GS Edition 2005-06-13 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 6/13/05. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 27 2005-06-13 http://www.infineon.com Published by Infineon Technologies AG