BFG 135A NPN Silicon RF Transistor For low-distortion broadband amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA 3 Power amplifiers for DECT and PCN systems 2 Integrated emitter ballast resistor 1 fT = 6 GHz VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFG 135A BFG135A Pin Configuration 1=E 2=B 3=E Package 4=C SOT-223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2 Collector current IC 150 Base current IB 20 Total power dissipation, TS 100 °C F) Ptot Junction temperature Value Unit V mA 1 W Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point RthJS 50 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-26-1999 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 - - V ICES - - 100 µA ICBO - - 50 nA IEBO - - 1 µA hFE 80 120 250 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 100 mA, VCE = 8 V 2 Oct-26-1999 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. 4.5 6 - Ccb - 1.3 1.8 Cce - 0.8 - Ceb - 7.5 - AC characteristics (verified by random sampling) Transition frequency fT GHz IC = 100 mA, VCE = 8 V, f = 200 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 30 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 2 - f = 1.8 GHz - 3.7 - f = 900 MHz - 14 - f = 1.8 GHz - 9 - - 10 - - 4 - - 38 - Power gain, maximum available F) Gma IC = 100 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , |S21e|2 Transducer gain IC = 100 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz Third order intercept point IP3 IC = 100 mA, VCE = 8 V, ZS = ZL= 50 , f = 900 MHz 1G ma dBm = |S21 / S12 | (k-(k2-1)1/2) 3 Oct-26-1999 BFG 135A Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 1200 mW 1000 TS P tot 900 800 TA 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 °C Kein 150 TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 2 RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Oct-26-1999 BFG 135A Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 4.0 7.0 GHz pF 10V 6.0 5V 3V 5.5 3.0 2V fT Ccb 5.0 2.5 4.5 4.0 2.0 3.5 1V 3.0 1.5 2.5 2.0 1.0 0.7V 1.5 1.0 0.5 0.5 0.0 0 4 8 12 16 V 0.0 0 22 20 40 60 80 100 120 VCB 140 mA 170 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 16 11 dB 10V dB 5V 12 10V 9 3V 2V 5V 8 G G 3V 10 7 2V 6 8 1V 5 6 4 1V 3 0.7V 4 2 2 0 0 1 20 40 60 80 100 120 0 0 140 mA 170 IC 0.7V 20 40 60 80 100 120 140 mA 170 IC 5 Oct-26-1999 BFG 135A Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 15 dB 45 0.9GHz IC=100mA 10V dBm 8V 12 11 0.9GHz 35 1.8GHz 9 5V IP 3 G 10 30 3V 8 7 25 6 2V 5 20 4 1V 3 15 2 1 0 0 2 4 6 V 8 10 0 12 20 40 60 80 100 120 mA VCE 160 IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 30 30 IC =100mA IC=100mA dB dB 20 G S21 20 15 15 10 10 5 10V 5 2V 0 0.7 1V 2V 1.0 1.5 2.0 1V 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz -5 0.0 3.5 f 0.5 10V GHz 3.0 f 6 Oct-26-1999