BUZ 102 S SPP52N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 102 S 55 V 52 A 0.023 Ω TO-220 AB Q67040-S4011-A2 Maximum Ratings Parameter Symbol Continuous drain current ID Values A TC = 25 °C 52 TC = 100 °C 37 Pulsed drain current Unit IDpuls 208 TC = 25 °C Avalanche energy, single pulse mJ E AS ID = 52 A, V DD = 25 V, RGS = 25 Ω L = 181 µH, Tj = 25 °C 245 Avalanche current,limited by Tjmax IAR 52 A Avalanche energy,periodic limited by Tjmax E AR 12 mJ Reverse diode dv/dt dv/dt kV/µs IS = 52 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage V GS Power dissipation P tot TC = 25 °C Semiconductor Group ± 20 V W 120 1 30/Jan/1998 BUZ 102 S SPP52N05 Maximum Ratings Parameter Symbol Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 Thermal resistance, junction - case RthJC ≤ 1.25 Thermal resistance, junction - ambient RthJA ≤ 62 Values IEC climatic category, DIN IEC 68-1 Unit °C K/W 55 / 175 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 55 - - 2.1 3 4 V GS(th) V GS=V DS, ID = 90 µA Zero gate voltage drain current V V (BR)DSS µA IDSS V DS = 50 V, V GS = 0 V, Tj = -40 °C - - 0.1 V DS = 50 V, V GS = 0 V, Tj = 25 °C - 0.1 1 V DS = 50 V, V GS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current V GS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) V GS = 10 V, ID = 37 A Semiconductor Group nA IGSS - 2 0.016 0.023 30/Jan/1998 BUZ 102 S SPP52N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 37 A Input capacitance 10 pF - 1220 1525 - 410 515 - 210 265 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8 Ω Rise time - 12 18 - 22 33 - 30 45 - 25 40 tr V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8 Ω Fall time tf V DD = 30 V, VGS = 10 V, ID = 52 A RG = 6.8 Ω Gate charge at threshold V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V Gate charge at 7.0 V 2.8 - 35 55 - 45 70 V V (plateau) V DD = 40 V, ID = 52 A Semiconductor Group 1.5 Qg(total) V DD = 40 V, ID = 52 A, VGS =0 to 10 V Gate plateau voltage Qg(7) V DD = 40 V, ID = 52 A, VGS =0 to 7 V Gate charge total nC Qg(th) 3 5.9 30/Jan/1998 BUZ 102 S SPP52N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TC = 25 °C Inverse diode direct current,pulsed - - 208 V 1.2 1.7 ns trr - 70 105 µC Qrr - V R = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 52 - V R = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - V SD V GS = 0 V, IF = 104 A Reverse recovery time ISM TC = 25 °C Inverse diode forward voltage A IS 4 0.15 0.25 30/Jan/1998 BUZ 102 S SPP52N05 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 130 55 W A 110 Ptot ID 100 45 40 90 35 80 70 30 60 25 50 20 40 15 30 10 20 5 10 0 0 0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 TC °C 180 TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 3 10 1 K/W A 10 0 t = 19.0µs p ZthJC V DS /I D ID 10 -1 R DS (o n) = 10 2 100 µs 10 -2 D = 0.50 0.20 10 1 10 1 ms -3 0.10 0.05 0.02 single pulse 10 ms 10 -4 0.01 DC 10 0 0 10 10 1 V 10 10 -5 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 30/Jan/1998 BUZ 102 S SPP52N05 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 120 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.070 Ptot = 120W l A k j 90 g 80 70 f 60 e 50 40 d 30 c d e f g RDS (on) 0.055 a 4.0 b 4.5 c 5.0 0.050 d 5.5 0.045 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 0.040 0.035 0.030 c 20 0.025 h 0.020 j 0.015 k i 0.010 V [V] = GS b 10 0.005 0.000 a 0 b 0.060 V [V] h GS 100 ID a Ω i 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VDS 0 a 4.0 4.5 b 5.0 20 c 5.5 d 6.0 40 e f 6.5 7.0 g 7.5 60 i j h k 8.0 9.0 10.0 20.0 80 A 110 ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 120 A I D 80 60 40 20 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 30/Jan/1998 BUZ 102 S SPP52N05 Gate threshold voltage Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 37 A, VGS = 10 V V GS(th)= f (Tj) parameter:VGS=VDS, ID =90µA 0.075 5.0 Ω V 4.4 0.065 0.060 RDS (on) VGS(th) 0.055 4.0 3.6 0.050 3.2 0.045 2.8 0.040 0.035 2.4 98% 0.030 max 2.0 0.025 typ 1.6 0.020 typ 1.2 0.015 0.8 0.010 -60 min 0.4 0.005 0.000 0.0 -20 20 60 100 °C 180 -60 -20 20 60 100 140 V 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 3 A C IF pF 10 2 Ciss 10 3 10 1 Tj = 25 °C typ C oss Tj = 175 °C typ Tj = 25 °C (98%) Crss 10 2 0 5 10 15 20 25 30 V Tj = 175 °C (98%) 40 VDS Semiconductor Group 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 30/Jan/1998 BUZ 102 S SPP52N05 Avalanche energy EAS = ƒ(Tj) parameter: ID = 52 A, VDD = 25 V RGS = 25 Ω, L = 181 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 52 A 260 16 mJ V 220 EAS VGS 200 12 180 10 160 0,2 VDS max 140 0,8 VDS max 8 120 100 6 80 4 60 40 2 20 0 20 0 40 60 80 100 120 140 °C 180 Tj 0 10 20 30 40 50 nC 65 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 30/Jan/1998