SPW15N60C3 Final data Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPW15N60C3 P-TO247 Q67040-S4604 15N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 15 TC = 100 °C 9.4 Pulsed drain current, tp limited by Tjmax I D puls 45 Avalanche energy, single pulse EAS 460 Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.8 mJ I D = 7.5 A, VDD = 50 V I D = 15 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt 15 A 6 V/ns IS=15A, VDS=480V, T j=125°C V Gate source voltage static VGS ±20 Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 156 W Operating and storage temperature T j , T stg -55... +150 °C Page 1 2003-09-17 SPW15N60C3 Final data Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, I D = 15 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 0.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 Soldering temperature, Tsold - - 260 K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=15A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=675µΑ, VGS=VDS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C, - 0.1 1 Tj=150°C - - 100 V GS=30V, VDS=0V - - 100 Ω V GS=10V, ID=9.4A, Tj=25°C - 0.25 0.28 Tj=150°C - 0.68 - f=1MHz, open Drain - 1.23 - Page 2 nA 2003-09-17 SPW15N60C3 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 11.9 - S pF ID=9.4A Input capacitance Ciss V GS=0V, V DS=25V, - 1660 - Output capacitance Coss f=1MHz - 540 - Reverse transfer capacitance Crss - 40 - - 80 - - 127 - Effective output capacitance, 2) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 3) Co(tr) pF time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 10 - Rise time tr ID=15A, RG =4.3Ω - 5 - Turn-off delay time td(off) - 50 80 Fall time tf - 5 10 - 7 - - 29 - - 63 - - 5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=480V, ID=15A V DD=480V, ID=15A, nC V GS=0 to 10V Gate plateau voltage V(plateau) V DD=480V, ID=15A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2003-09-17 SPW15N60C3 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 15 - - 45 A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, I F=IS - 1 1.2 V Reverse recovery time t rr VR =480V, IF=IS , - 460 - ns Reverse recovery charge Q rr diF/dt=100A/µs - 27 - µC Peak reverse recovery current I rrm - 55 - A Peak rate of fall of reverse di rr/dt - tbd - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.012 Rth2 Cth1 0.0002495 0.023 Cth2 0.0009406 Rth3 0.043 Cth3 0.001298 Rth4 0.156 Cth4 0.00362 Rth5 0.178 Cth5 0.009046 Rth6 0.072 Cth6 0.412 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-09-17 SPW15N60C3 Final data 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 170 10 2 SPW15N60C3 W A 140 10 1 ID Ptot 120 100 10 0 80 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 60 10 -1 40 20 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 60 K/W ID 10 0 ZthJC 10 V VDS 10 -1 Vgs = 20V Vgs = 7V A Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V 40 Vgs = 4V 30 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 20 10 10 -1 0 0 4 8 12 16 20 V 28 VDS Page 5 2003-09-17 3 SPW15N60C3 Final data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS ID A 20 1.8 Vgs = 20V Vgs = 7V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 7V Vgs = 20V Ω RDS(on) 30 1.4 1.2 15 1 10 0.8 5 0.6 0 0 4 8 12 16 V 20 0.4 0 28 5 10 15 A 20 30 ID VDS 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 9.4 A, VGS = 10 V parameter: tp = 10 µs 1.6 SPW15N60C3 60 A 25°C 1.2 ID RDS(on) Ω 1 40 150°C 0.8 30 0.6 20 0.4 98% typ 10 0.2 0 -60 -20 20 60 100 °C 180 0 0 2 4 6 V 10 VGS Tj Page 6 2003-09-17 SPW15N60C3 Final data 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD) parameter: ID = 15 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPW15N60C3 V SPW15N60C3 A 10 10 1 0.2 VDS max IF VGS 12 0.8 VDS max 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 0 0 10 20 30 40 50 60 80 nC 70 10 -1 0 100 0.4 0.8 1.2 1.6 2.4 V 2 QGate 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 7.5 A, V DD = 50 V 15 0.5 mJ 9 EAS A IAR 3 VSD Tj(START)=25°C 6 0.3 0.2 Tj(START)=125°C 3 0 -3 10 0.1 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 4 Page 7 0 20 40 60 80 100 120 160 °C Tj 2003-09-17 SPW15N60C3 Final data 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=0.8mJ 720 SPW15N60C3 900 W 700 680 PAR V(BR)DSS V 660 600 640 500 620 400 600 300 580 200 560 100 540 -60 -20 20 60 100 °C 0 4 10 180 10 5 Hz Tj 10 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 4 15 pF Ciss µJ C Eoss 10 3 Coss 9 10 2 6 10 1 Crss 3 10 0 0 100 200 300 400 V 600 VDS 0 0 100 200 300 400 V 600 VDS Page 8 2003-09-17 6 Final data SPW15N60C3 Definition of diodes switching characteristics Page 9 2003-09-17 SPW15N60C3 Final data P-TO-247-3-1 15.9 5.03 20˚ 5˚ D 5.94 4.37 2.03 6.17 20.9 9.91 6.35 ø3.61 7 1.75 41.22 2.97 x 0.127 16 D 1.14 0.243 1.2 0.762 MAX. 2 2.4 +0.05 2.92 5.46 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12 Page 10 2003-09-17 Final data SPW15N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2003-09-17