PD - 50060B GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses • HEXFRED™ antiparallel diodes with ultra- soft recovery • Industry standard package • UL approved VCES = 1200V VCE(on) typ. = 2.4V @VGE = 15V, IC = 100A Benefits • Increased operating efficiency • Direct mounting to heatsink • Performance optimized for power conversion: UPS, SMPS, Welding • Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C ICM ILM IFM VGE VISOL PD @ TC = 25°C PD @ TC = 85°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current ➀ Peak Switching Current ➁ Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. Units 1200 100 200 200 200 ±20 2500 520 270 -40 to +150 -40 to +125 V A V W °C Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS www.irf.com Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 ➂ Weight of Module Typ. Max. — — 0.1 — — 200 0.24 0.35 — 4.0 3.0 — Units °C/W N. m g 1 4/24/2000 GA100TS120U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1200 — — VGE = 0V, IC = 1mA — 2.4 2.9 VGE = 15V, IC = 100A — 2.2 — V VGE = 15V, IC = 100A, TJ = 125°C Gate Threshold Voltage 3.0 — 6.0 IC = 1.25mA Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 1.25mA Forward Transconductance ➃ — 136 — S VCE = 25V, IC = 100A Collector-to-Emitter Leaking Current — — 1.0 mA VGE = 0V, VCE = 1200V — — 10 VGE = 0V, VCE = 1200V, TJ = 125°C Diode Forward Voltage - Maximum — 3.3 4.0 V IF = 100A, VGE = 0V — 3.2 — IF = 100A, VGE = 0V, TJ = 125°C Gate-to-Emitter Leakage Current — — 250 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt 2 Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — Typ. 830 140 275 172 141 435 343 14 21 35 18672 830 161 149 104 7664 1916 Max. Units Conditions 1245 VCC = 400V 210 nC IC = 124A 412 TJ = 25°C — RG1 = 15Ω, RG2 = 0Ω, — ns IC = 100A — VCC = 720V — VGE = ±15V — mJ — 52 — VGE = 0V — pF VCC = 30V — ƒ = 1 MHz — ns IC = 100A — A RG1 = 15Ω — µC RG2 = 0Ω — A/µs VCC = 720V di/dt»1300A/µs www.irf.com GA100TS120U 100 LOAD CURRENT (A) F or b oth: D uty cycle : 50 % T J = 12 5° C T sink = 90 °C G a te d rive a s spe cified 75 P ow er D is s ipation = 170 W S q u a re w a v e : 50 60% of rated v oltage I 25 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector Current (A) IC , Collector Current ( A ) 100 TJ = 25 ° C V GE = 15V 80µs PULSE WIDTH 2.0 3.0 4.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com TJ = 125 ° C 100 TJ = 125 ° C 10 1.0 I C , ICollector-to-Emitter Current ( A ) (A) C , Collector Current 1000 1000 TJ = 25 ° C 10 V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 GA100TS120U 4.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 120 80 40 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH 3.0 IC = 200 A IC = 100 A 2.0 IC = 50 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C) TC , Case Temperature (° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature T h erm al R e s po ns e (Zth JC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 PDM S IN G LE P U LS E (TH E R M A L R E S P O N S E ) t 1 t2 Notes: 1. Duty factor D = t 0.01 0.0001 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 A 10 t 1 , R e cta n g u la r P u ls e D u ra tio n (s e c) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA100TS120U VGE = Cies = Cres = Coes = C, Capacitance (pF) 28000 0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc Cies 21000 14000 Coes 7000 Cres 20 VGE , Gate-to-Emitter Voltage (V) 35000 0 1 10 16 12 8 4 0 100 0 VCE , Collector-to-Emitter Voltage (V) 1000 = 720V = 15V = 125 ° C = 100A 50 40 30 10 20 30 40 RG , Gate Resistance (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 600 900 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) V CC V GE TJ IC 300 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 60 VCC = 400V I C = 113A 50 RG1 Ω;RG2 = 0 Ω = Ohm G =15 VGE = 15V VCC = 720V 100 IC = 200 A IC = 100 A IC = 50 A 10 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature °( C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 GA100TS120U 300 RG = Ohm Ω;RG2 = 0 Ω G1=15 T J = 150 25 ° C VCC = 720V VGE = 15V IC , Collector Current ( A ) Total Switching Losses (mJ) 80 60 40 20 VGE GE = 20V TJJ = 125°C VCEmeas ured at terminal (Peak V oltage) 200 100 SA FE OPERA TING A REA A 0 0 0 50 100 150 200 0 Fig. 11 - Typical Switching Losses vs. Collector Current 900 1200 1500 Fig. 12 - Reverse Bias SOA 1000 16000 I F = 200A 12000 IF = 100A I F = 50A TJ = 125°C QRR - ( nC) Instantaneous Forward Current - IF ( A ) 600 VCE, C o lle c to r -to -E m itte r Vo lta g e (V) I C , Collector Current (A) T = 25°C J 100 8000 4000 10 0.0 1.0 2.0 3.0 4.0 5.0 F o rw a rd Vo lta g e DDrop ro p - V- VFFM ) M(V (V) Forward Voltage Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 300 0 400 VR = 7 20V T J = 1 25 °C T J = 2 5°C 800 1200 1600 2000 di f /dt - (A/µ s) Fig. 14 - Typical Stored Charge vs. dif/dt www.irf.com GA100TS120U 250 240 VR = 72 0V TJ = 12 5°C TJ = 25 °C VR = 72 0V TJ = 12 5°C TJ = 25 °C 200 I F = 200A I F = 100A I F = 50A 200 IRRM - ( A ) IF = 200A IF = 100A trr - ( ns ) IF = 50A 160 150 100 120 50 80 400 800 1200 1600 2000 di f /dt - (A/µ s) Fig. 15 - Typical Reverse Recovery vs. dif/dt www.irf.com 0 400 800 1200 1600 2000 di f /dt - (A/µ s) Fig. 16 - Typical Recovery Current vs. dif/dt 7 GA100TS120U 90% V ge +V ge V ce Ic 90% Ic 10% V ce Ic 5% Ic td (off) tf E off = ∫ Vce Ic dt t1+5µ S V ce ic dt t1 Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g trr Q rr = Ic trr id Ic dtdt tx ∫ +V g tx 10% V c c 10% Irr Vcc D U T V O LT A G E AND CURRENT Vce V pk Irr Vcc 10% Ic Ipk 90% Ic Ic D IO D E R E C O V E R Y W AVEFORMS tr td(on) 5% V c e t1 ∫ t2 c e ieIcdt dt E on = VVce t1 t2 E rec = D IO D E R E V E R S E RECOVERY ENERG Y t3 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 VVd d idIc dt dt t3 t4 Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com GA100TS120U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* R L= 480V 4 X IC @25°C 0 - 480V 50V 600 0µ F 100 V Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 19. Pulsed Collector Current Test Circuit 9 GA100TS120U Notes: ➀ Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ➁ See fig. 17 ➂ For screws M5x0.8 ➃ Pulse width 50µs; single shot. Case Outline — INT-A-PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 10 www.irf.com