IRF IRG4BC30S-SPBF

PD - 95786
IRG4BC30S-SPbF
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Standard: optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tight
parameter distribution and high efficiency
• Lead-Free
VCES = 600V
VCE(on) typ. = 1.4V
G
@VGE = 15V, IC = 18A
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
D2Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
600
34
18
68
68
±20
10
100
42
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
RθJC
RθCS
RθJA
Wt
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Parameter
Typ.
Max.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
–––
0.50
–––
1.44
1.2
–––
40
–––
Units
°C/W
g (oz)
1
8/30/04
IRG4BC30S-SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)CES/∆TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
VCE(ON)
Collector-to-Emitter Saturation Voltage
V(BR)CES
V(BR)ECS
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
gfe
Forward Transconductance …
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
Min.
600
18
—
—
—
—
3.0
—
6.0
—
—
—
—
Typ. Max. Units
Conditions
—
—
V
VGE = 0V, IC = 250µA
—
—
V
VGE = 0V, IC = 1.0A
0.75 —
V/°C VGE = 0V, IC = 1.0mA
1.40 1.6
IC = 18A
VGE = 15V
1.84 —
IC = 34A
See Fig. 2, 5
V
1.45 —
IC = 18A , TJ = 150°C
—
6.0
VCE = VGE, IC = 250µA
-11
— mV/°C VCE = VGE, IC = 250µA
11
—
S
VCE = 100V, IC = 18A
—
250
VGE = 0V, VCE = 600V
µA
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— ±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Q ge
Qgc
td(on)
tr
td(off)
tf
E on
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
50
75
IC = 18A
7.3
11
nC
VCC = 400V
See Fig. 8
17
26
VGE = 15V
22
—
18
—
TJ = 25°C
ns
540 810
IC = 18A, VCC = 480V
390 590
VGE = 15V, RG = 23Ω
0.26 —
Energy losses include "tail"
3.45 —
mJ See Fig. 9, 10, 14
3.71 5.6
21
—
TJ = 150°C,
19
—
IC = 18A, VCC = 480V
ns
790
—
VGE = 15V, RG = 23Ω
760
—
Energy losses include "tail"
6.55 —
mJ See Fig. 11, 14
7.5
—
nH
Measured 5mm from package
1100 —
VGE = 0V
72
—
pF
VCC = 30V
See Fig. 7
13
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature (See fig. 13b).
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a).
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC30S-SPbF
50
For both:
40
Load Current ( A )
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
I
Power Dissipation = 21 W
Clamp voltage:
80% of rated
30
Square wave:
60% of rated
voltage
20
I
10
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 o C
TJ = 150 o C
10
V GE = 15V
20µs PULSE WIDTH
1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C, Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
TJ = 150 oC
10
TJ = 25 oC
1
V CC = 50V
5µs PULSE WIDTH
0.1
5
6
7
8
9
10
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC30S-SPbF
3.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
35
30
25
20
15
10
5
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
IC = 36 A
2.5
2.0
IC = 18 A
1.5
IC = 9.09AA
1.0
-60 -40 -20
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.01
0.00001
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC30S-SPbF
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
2000
1500
Cies
1000
500
Coes
VCC = 400V
I C = 18A
16
12
8
4
Cres
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
V CC = 480V
V GE = 15V
TJ = 25 ° C
3.76 I C = 18A
3.72
3.68
3.64
3.60
20
30
40
RG , Gate Resistance (Ohm)
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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30
40
50
60
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.80
10
20
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
10
50
RG = 23Ohm
Ω
VGE = 15V
VCC = 480V
IC = 36 A
10
IC = 18 A
A
IC = 9.0
9A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC30S-SPbF
RG
TJ
VCC
12.0 VGE
1000
= 23Ohm
Ω
= 150° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
15.0
VGE = 20V
T J = 125 oC
100
9.0
6.0
3.0
10
SAFE OPERATING AREA
1
0.0
0
10
20
30
40
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
50
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC30S-SPbF
L
D.U.T.
VC *
50V
RL =
0 - 480V
1000V
480V
4 X [email protected]°C
480µF
960V
c
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
Driver*
D.U.T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
c
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRG4BC30S-SPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IR F 530S WIT H
LOT CODE 8024
AS S EMBL ED ON WW 02, 2000
IN THE AS S EMBL Y L INE "L "
INT E RNAT IONAL
RE CT IF IE R
LOGO
Note: "P" in as s embly line
pos ition indicates "Lead-F ree"
PAR T NU MBE R
F 530S
AS S EMBLY
L OT CODE
DAT E CODE
YE AR 0 = 2000
WEE K 02
LINE L
OR
INT ERNAT IONAL
RECT IF IER
LOGO
AS S EMB LY
L OT CODE
8
PART NUMBER
F 530S
DAT E CODE
P = DES IGNAT ES L EAD-F RE E
PR ODUCT (OPT IONAL)
YEAR 0 = 2000
WEE K 02
A = AS S E MB L Y S IT E CODE
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IRG4BC30S-SPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
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9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/