INFINEON BTS432F2

PROFET® BTS 432 F2
Smart Highside Power Switch
Features
Product Summary
VLoad dump
80
Vbb-VOUT Avalanche Clamp
58
Vbb (operation)
4.5 ... 42
Vbb (reverse)
-32
RON
38
IL(SCp)
21
IL(SCr)
10
IL(ISO)
11
• Load dump and reverse battery protection1)
• Clamp of negative voltage at output
• Short-circuit protection
• Current limitation
• Thermal shutdown
• Diagnostic feedback
• Open load detection in ON-state
• CMOS compatible input
• Electrostatic discharge (ESD) protection
• Loss of ground and loss of Vbb protection2)
• Overvoltage protection
• Undervoltage and overvoltage shutdown with autorestart and hysteresis
V
V
V
V
mΩ
A
A
A
5
5
Application
5
1
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays and discrete circuits
1
1
SMD
Straight leads
Standard
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
R bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
+ V bb
3
V Logic
2
Voltage
Charge pump
sensor
Level shifter
Limit for
unclamped
ind. loads
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Logic
Load
detection
ST
Short circuit
detection
GND

PROFET
1
Signal GND
1)
2)
Load GND
No external components required, reverse load current limited by connected load.
Additional external diode required for charged inductive loads
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PROFET® BTS 432 F2
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
single pulse
Tj=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Symbol
Vbb
Vs3)
Values
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
125
A
°C
1.7
2.0
J
kV
-0.5 ... +6
±5.0
±5.0
V
mA
≤1
≤ 75
≤ tbd
K/W
EAS
VESD
VIN
IIN
IST
63
66.5
Unit
V
V
W
see internal circuit diagrams page 6...
Thermal resistance
3)
4)
chip - case:
junction - ambient (free air):
SMD version, device on pcb 4):
RthJC
RthJA
VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
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PROFET® BTS 432 F2
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A
Tj=25 °C: RON
Tj=150 °C:
IL(ISO)
Nominal load current (pin 3 to 5)
ISO Proposal: VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, VIN= 0, see diagram page 7,
Tj =-40...+150°C
Turn-on time
to 90% VOUT:
Turn-off time
to 10% VOUT:
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
Operating Parameters
Operating voltage 5)
Tj =-40...+150°C:
Undervoltage shutdown
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+150°C:
Undervoltage restart of charge pump
see diagram page 12
Tj =-40...+150°C:
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
6
)
Overvoltage protection
Tj =-40°C:
Ibb=40 mA
Tj =25...+150°C:
Standby current (pin 3)
Tj=-40...+25°C:
VIN=0
Tj=150°C:
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1) 7), VIN=5 V
5)
6)
7)
--
30
38
mΩ
9
55
11
70
--
A
--
--
1
mA
ton
toff
50
10
160
--
300
80
µs
dV /dton
0.4
--
2.5
V/µs
-dV/dtoff
1
--
5
V/µs
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
4.5
2.4
---
---6.5
42
4.5
4.5
7.5
V
V
V
V
∆Vbb(under)
--
0.2
--
V
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
--0.2
-67
12
18
6
52
----
V
V
V
V
25
60
--
µA
IL(off)
42
42
-60
63
----
IGND
--
1.1
--
mA
IL(GNDhigh)
Ibb(off)
µA
At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V
see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
Add IST, if IST > 0, add IIN, if VIN>5.5 V
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PROFET® BTS 432 F2
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions
Initial peak short circuit current limit (pin 3 to 5) 8),
IL(SCp)
( max 400 µs if VON > VON(SC) )
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C: td(SC)
Values
min
typ
max
Unit
--7
-21
--
35
---
A
6
10
--
A
80
--
400
µs
VON(CL)
--
58
--
V
VON(SC)
Tjt
∆Tjt
EAS
ELoad12
ELoad24
-150
---
8.3
-10
--
---1.7
1.3
1.0
V
°C
K
J
---
-120
32
--
V
Ω
2
2
---
900
750
mA
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), IL= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation 9),
Tj Start = 150 °C, single pulse
Vbb = 12 V:
Vbb = 24 V:
Reverse battery (pin 3 to 1) 10)
Integrated resistor in V bb line
Diagnostic Characteristics
Open load detection current
(on-condition)
8)
-Vbb
Rbb
Tj=-40 °C: IL (OL)
Tj=25..150°C:
Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4)
While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx.
VON(CL)
2
EAS= 1/2 * L * IL * (
), see diagram page 8
VON(CL) - Vbb
10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
9)
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PROFET® BTS 432 F2
Parameter and Conditions
Symbol
Values
min
typ
max
VIN(T+)
1.5
--
2.4
V
VIN(T-)
1.0
--
--
V
-1
0.5
--
-30
V
µA
10
25
50
µA
80
200
400
µs
td(ST)
350
--
1600
µs
VST(high)
VST(low)
5.4
--
6.1
--
-0.4
V
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Input and Status Feedback11)
Input turn-on threshold voltage
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
∆ VIN(T)
IIN(off)
Input threshold hysteresis
Off state input current (pin 2)
VIN = 0.4 V:
On state input current (pin 2)
VIN = 3.5 V: IIN(on)
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150°C:
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
11)
td(ST SC)
Unit
If a ground resistor RGND is used, add the voltage drop across this resistor.
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PROFET® BTS 432 F2
Truth Table
Input-
Output
level
level
432
D2
432
E2/F2
432
I2
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
H
H
H
L
H
L
H
H (L13))
L
L
L14)
L14)
L
L
H
H
H
L
H
L
H
H (L13))
L
L
H
H
H
H
H
H
L
H
H
L
L
H
L
L
L14)
L14)
L
L
Normal
operation
Open load
Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
Status
12)
H
L
L
H
H
L
L
L
L
L
L
L = "Low" Level
H = "High" Level
Status output
Terms
+5V
Ibb
3
I IN
2
IN
IL
V
VST
IN
OUT
PROFET
I ST
V
R ST(ON)
Vbb
4
VON
5
GND
ST
ESDZD
GND
1
bb
R
IGND
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not
designed for continuous current
VOUT
GND
Short Circuit detection
Input circuit (ESD protection)
R
IN
ST
Fault Condition: VON > 8.3 V typ.; IN high
I
+ V bb
ESDZDI1 ZDI2
I
I
V
ON
GND
OUT
Logic
unit
ZDI1 6.1 V typ., ESD zener diodes are not designed for
continuous current
12)
13)
14)
Short circuit
detection
Power Transistor off, high impedance
Low resistance short Vbb to output may be detected by no-load-detection
No current sink capability during undervoltage shutdown
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PROFET® BTS 432 F2
Inductive and overvoltage output clamp
GND disconnect
+ V bb
V
3
Z
V
IN
2
ON
Vbb
PROFET
OUT
V
bb
V
IN
V
5
ST
4
GND
OUT
GND
1
ST
V
GND
VON clamped to 58 V typ.
Any kind of load. In case of Input=high is V OUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
Overvolt. and reverse batt. protection
GND disconnect with GND pull up
+ V bb
V
R IN
Z
3
R bb
IN
2
IN
PROFET
Logic
V
R ST
Vbb
ST
GND
OUT
4
OUT
5
ST
GND
PROFET
1
V
R GND
V
bb
V
IN ST
V
GND
Signal GND
Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add
RGND, RIN, RST for extended protection
Any kind of load. If V GND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Open-load detection
Vbb disconnect with charged inductive
load
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
3
high
+ V bb
2
IN
Vbb
PROFET
4
GND
1
V
OUT
Logic
unit
5
ST
VON
ON
OUT
bb
Open load
detection
3
high
2
IN
Vbb
PROFET
4
OUT
5
ST
GND
1
V
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7
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22.03.99
PROFET® BTS 432 F2
Inductive Load switch-off energy
dissipation
E bb
E AS
IN
PROFET
=
ELoad
Vbb
ST
OUT
EL
GND
ER
Energy dissipated in PROFET EAS = Ebb + EL - ER.
2
ELoad < EL, EL = 1/2 * L * I L
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PROFET® BTS 432 F2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
Logic version
BTS 432D2 432E2 432F2 432I2
Overtemperature protection
Tj >150 °C, latch function 15)16)
Tj >150 °C, with auto-restart on cooling
Short-circuit to GND protection
switches off when VON>8.3 V typ.15)
(when first turned on after approx. 200 µs)
D
E
X
F
I
X
X
X
X
X
X
X
X
X
X
Undervoltage shutdown with auto restart
X
X
X
X
Overvoltage shutdown with auto restart
X
X
X
X
X
X
X
X
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
Status feedback for
overtemperature
X
X
X
X
-17)
-17)
-17)
X
open load
X
X
X
X
undervoltage
X
-
-
X
overvoltage
X
-
-
X
X
X
X
X
X
X
X
short circuit to GND
short to Vbb
Status output type
CMOS
X
Open drain
X
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
Load current limit
high level (can handle loads with high inrush currents)
X
medium level
X
low level (better protection of application)
15)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
16) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
17) Low resistance short V to output may be detected by no-load-detection
bb
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PROFET® BTS 432 F2
Timing diagrams
Figure 3a: Turn on into short circuit,
Figure 1a: Vbb turn on:
IN
IN
t d(bb IN)
V
bb
ST
V
V
OUT
OUT
td(SC)
A
I
ST open drain
L
t
t
A
in case of too early V IN=high the device may not turn on (curve A)
td(bb IN) approx. 150 µs
td(SC) approx. 200µs if V bb - VOUT > 8.3 V typ.
Figure 3b: Turn on into overload,
Figure 2a: Switching an inductive load
IN
IN
td(ST)
ST
IL
I L(SCp)
I L(SCr)
*)
V
OUT
I
ST
L
IL(OL)
t
t
Heating up may require several milliseconds , V bb - VOUT < 8.3 V
typ.
*) if the time constant of load is too large, open-load-status may
occur
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PROFET® BTS 432 F2
Figure 3c: Short circuit while on:
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
IN
ST
ST
V OUT
t
d(ST)
V
OUT
IL
I
**)
L
open
t
t
**) current peak approx. 20 µs
Figure 4a: Overtemperature,
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
Reset if (IN=low) and (Tj<Tjt)
IN
IN
td(ST OL1)
ST
ST
V
t d(OL ST2)
V
OUT
OUT
normal
I
T
open
t
t
td(ST OL1) = tbd µs typ., t d(ST OL2) = tbd µs typ
*) ST goes high , when VIN=low and Tj<Tjt
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normal
L
J
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22.03.99
PROFET® BTS 432 F2
Figure 6a: Undervoltage:
Figure 7a: Overvoltage:
IN
IN
V bb
Vbb
V ON(CL)
Vbb(over)
V bb(o rst)
Vbb(u cp)
V
V
bb(under)
bb(u rst)
V
OUT
V OUT
ST open drain
ST
t
t
Figure 6b: Undervoltage restart of charge pump
VON [V]
VON(CL)
V on
off
V
off
V
V
bb(u rst)
V
V
bb(under)
bb(over)
bb(o rst)
bb(u cp)
on
V bb
Vbb [V]
charge pump starts at Vbb(ucp) =6.5 V typ.
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PROFET® BTS 432 F2
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS 432 F2
Ordering code
TO-220AB/5, Option E3043 Ordering code
BTS 432 F2 E3043
Q67060-S6203-A2
Q67060-S6203-A4
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS432F2 E3062A T&R:
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Q67060-S6203-A6
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PROFET® BTS 432 F2
Edition 22.03.99
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2000.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address
list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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