IRF IR3311

Data Sheet No.PD60210_C
IR3311(S)
PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH
Product Summary
Features
•
•
•
•
•
•
•
Load current feedback
Programmable over current shutdown
Active clamp
E.S.D protection
Input referenced to Vcc
Over temperatue shutdown
Reverse battery protection
Rds(on)
12mΩ
Vcc.op.
6 to 28V
Current ratio
Ishutdown
Description
The IR 3311(S) is a Fully Protected 4 terminal high side switch.
The input signal is referenced to Vcc. When the input voltage
Vcc - Vin is higher than the specified Vih threshold, the output
power MOSFET is turned-on. When Vcc - Vin is lower than
the specified Vil threshold, the output MOSFET is turned-off.
A sense current proportional to the current in the power Mosfet
is sourced to the Ifb pin. Over-current shutdown occurs when
Vifb - Vin > 4.5 V. The current shutdown threshold is adjusted
by selecting the proper RIfb. Either over-current and over-temperature latches off the switch. The device is reset by pulling
the input pin high. Other integrated protections ( ESD, reverse
battery, active clamp ) make the IR3311(S) very rugged and
suitable for the automotive environment.
5300
6A to 58A
Active clamp
35V
Load Dump
40V
Package
5 Lead TO220
IR3311
5 Lead
D2Pak (SMD220)
IR3311S
Typical Connection
VCC
IN
IR 3311
Ifb
Battery
OUT
10 k
LOAD
RIfb
on
off
System
Ground
Power
Ground
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1
IR3311(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to Vcc lead. (TAmbient = 25oC unless otherwise specified).
Symbol
Parameter
Min.
Max.
Vcc - Vin max
Vcc-VIfb max
Vcc - Vout max.
Maximum input voltage
Maximum Ifb voltage
Maximum output voltage
-16
-0.3
-0.3
50
50
30
Units
Ids cont.
Ids1 cont
Ids pulsed
ESD 1
ESD 2
Pd
TJ max.
Diode max. permanent current (Rth = 60 °C/W) (1)
Diode max. permanent current (Rth = 5 °C/W) (1)
Diode max. pulsed current (1)
Electrostatic discharge (human body model) C=100pF, R=1500Ω,
Electrostatic discharge (machine model)C=200pF, R=0Ω, L=10µH
Power dissipation ( Rth = 60 °C/W )
Max. storage and junction temperature
—
—
—
—
—
—
-40
2.8
30
100
4
0.5
2
150
Min RIfb
Ifb max
Minimum resistor on the Ifb pin
Max. Ifb current
0.3
-20
—
+20
kΩ
mA
Typ.
Max.
Units
60
—
—
V
A
kV
W
°C
Thermal Characteristics
Symbol
Rth
Rth
Rth
Rth
1
2
1
2
Rth 3
Parameter
Thermal resistance junction to Ambient - TO220
Thermal resistance junction to case - TO220
Thermal resistance with standard footprint - SMD220
Thermal resistance with 1" square footprint - SMD220
Thermal resistance junction to case - SMD220
0.7
60
35
0.7
—
—
—
°C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
Parameter
Vcc -Vin
Vcc -VIfb
Vcc
Iout
Iout 85°C amb.
RIfb
Pulse min.
Fmax
Continuous input voltage
Continuous Ifb pin voltage
Supply to power ground voltage
Continuous output current ( Rth/amb < 5 °C/W, Tj = 125°C)
Continuous output current ( Rth/amb < 60 °C/W, Tj = 125°C)
Ifb resistor to program Isd and scale (2 & 3)
Minimum turn-on pulse width
Maximum operating frequency
Fmax Prot.
Maximum frequency with protections activated
Min.
Max.
Units
6
0.3
6
28
28
28
V
—
—
0.5
1
18
5
3.5
—
—
—
500
200
A
kΩ
ms
Hz
1) Limited by junction temperature. Pulsed current is also limited by wiring
2) <500 Ohm or shorting Ifb to gnd may damage the part with Isd around 90A
3) >5000 Ohm or leaving Ifb open will shutdown the part. No current will flow in the load.
2
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IR3311(S)
Protection Characteristics
Tj = 25oC (unless otherwise specified), RIfb = 500 to 5kOhm.
Symbol
Parameter
VIfb -Vin
@ Isd
Over-current shutdown threshold
Tsd
Treset
OV
Isdf
Isd_1k
Min.Pulse
WAIT
Over-temp. shutdown threshold
Protection reset time
Over voltage shutdown (not latched)
Fixed over current shutdown
Adjustable over current shutdown 1K
Minimum pulse width (no WAIT state)
WAIT function timer
Rev.Rdson Rds(on) reverse battery protection
Min.
Typ.
Max. Units Test Conditions
4
—
—
—
58
18
200
0.5
4.5
5.4
165
50
36
70
24
500
1.2
—
300
—
90
31
1200
3.5
µS
V
A
A
µs
ms
6
10
18
mΩ
V
°C
see Fig. 7
see Fig. 7
VIfb<Vin
RIfb=1k
see Fig. 6
see Figs. 6 and 7
Vcc-Vin=-12V, Iload=10A
Static Electrical Characteristics
(Tj = 25oC, Vcc = 14V unless otherwise specified.)
Symbol
Parameter
Min.
Typ.
Iq
Total quiescent current (Iout +Ifb)
—
22
Max. Units Test Conditions
50
µA
Iin
Vih
Vil
Vhys
Iout qs
Input current
High level input threshold voltage (4)
Low level input threshold voltage (4)
Input hysterisis = Vih-Vil
Output quiescent current
1.5
—
3.5
0.4
—
4
5
4
1
9
6
mA
5.5
—
1.5
15
Rds1 on
Rds2 on
Rds3 on
Vclamp1
Vclamp2
Vsd
Vaval.
ON state resistance (5)
ON state resistance (5)
ON state resistance (5)
Vcc to Vout active clamp voltage
Vcc to Vout active clamp voltage
Body diode forward voltage
Vcc to Vout avalanche voltage
5
5
10
30
—
—
40
9
9.5
17
35
36
0.85
43
12
17
23
—
40
1
50
Vcc-Vin=0, Vcc- Vout=12V
Vcc-VIfb=12V
Vcc-Vin=14V
V
µA
mΩ
V
Vcc-Vin=0; Vcc-VIfb=0;
Vcc-Vout=12V
Iout=30A, Vcc-Vin=14V
Iout=17A, Vcc -Vin=6V
Iout=30A, Tj = 150oC
Iout = 10mA
Iout=30A,Vcc-VIfb<20V
Iout=5A
Iout=100mA,Vcc-Vfb> 35V
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 0.4Ω, Tj = 25oC, (unless otherwise specified).
Symbol Parameter
Tdon
Tr1
Tr2
E on
Td off
Tf
Eoff
Turn-on delay time to Vcc-Vout= 0.9 Vcc
Rise time to Vcc-Vout=5V
Rise time to Vcc -Vout = 0.1Vcc
Turn ON energy
Turn-off delay to Vcc -Vout = 0.1Vcc
Fall time to Vcc-Vout = 0.9 Vcc
Turn OFF energy
Min.
2
0.4
10
—
6
3
—
Typ. Max. Units Test Conditions
9
1.6
30
1.5
25
10
1
20
5
100
3
80
30
2
µs
see figure 2
mJ
µs
see figure 3
mJ
4) Input thresholds are measured directly between the input pin and the tab. Any parasitic resistance in common between the load
current path and the input signal path can significantly affect the thresholds.
5) Rds(on) is measured between the Tab and the Out pin, 5mm away from the package.
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IR3311(S)
Current Sense Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ratio
4,500
5,300
6,300
—
-5
-0.9
—
0
0
0
+5
0.9
15
%
A
µs
I load / IIfb current ratio
Ratio_TC Iload/Ifb variation over temperature
offset
Load current diagnostic offset
Trst
Ifb response time (low signal)
Tj = 25oC ,Rfb = 500Ω,
I = 50A
Tj = -40 T0 +150oC
I = 2A
90% of the I load step
Functional Block Diagram
VCC
active clamp
disconnection
charge
pump
driver
On/Off
fast turn-off
4mA
70V
33V
70V
+
-
33V
36V
33V
Q
Reset
latch
Set
Wait
43V
timer
1.5 ms
timer
4V
300 us
-
-
Min. pulse
+
+
80Ω
I out > 60 A
Tj > 165 °C
IN
4
reverse
battery
protection
Ifb
OUT
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IR3311(S)
Lead Assignments
3 (Vcc)
3 (Vcc)
1 - In
2 - Ifb
3 - Vcc (tab)
4 - NC
5 - Out
12345
12345
5 Lead - D2PAK (SMD220)
5 Lead - TO220
IR3311
IR3311S
Part Number
Vcc-Vin
Vcc-Vin
Vcc-Vin max
Vcc-Vin1 max
Vcc-Vin (op)
Vih
Vil
Vhys
Vcc-Vout
Vcc-Vout max
Vcc
Vclamp1
Vclamp2
In
IR3311
Iin
Iin
max
Iin1,2
Iin(on)
VIfb
Ifb
Out
Iout
Iout max
-Ids cont.
-Ids pulsed
Iout 85°C
Isd
Iq
Ifb
Figure 1 - Voltages and currents definitions
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Vcc
90%
Vcc-Vout
DV/dt(on)
5V
10 %
Td on
Tr1
Tr2
Figure 2 - Switching time definitions (turn-on)
5
IR3311(S)
Vcc
Vcc-Vin
Vin
90%
Ids
Vcc-Vout
DV/dt(off)
T clamp
Vcc
Vds clamp
10 %
Td off
Tf
Vout
Vcc-Vclamp
( see Design tip to evaluate power dissipation )
Figure 3 - Switching time definitions (turn-off)
Vin
Figure 4 - Active clamp waveforms
clamp
Vcc-Vin
12V
0V
I Load
38 us (typ.)
T minpulse
Iout
T minpulse
Wait
Ifb
0V
Precise measurement
Figure 6 - Minimum pulse & WAIT
function
Figure 5 - Current sense precision:
Accurate measurement only when the power Mosfet is fully ON
6
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IR3311(S)
Vcc-Vin
12V
0V
Iout
t < T reset
t > T reset
t > T reset
t < T reset
OI shutdown
Isd
wait
wait
Tj
OT shutdown
Tjsd
Figure 7 - Protection Timing Diagrams
All curves are typical characteristics. Operation in hatched areas is not recommended. Tj=250C, RIfb=500 Ohm,
Vcc=14V (unless otherwise specified).
16
10
14
8
12
10
6
8
4
6
4
2
2
0
0
0
10
20
30
40
50
60
Figure 8 - Icc (mA) vs Vcc-Vin (V)
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70
0
5
10
15
20
25
30
Figure 9- Rdson (mΩ) vs Vcc-Vin (V)
7
IR3311(S)
6
200%
180%
5
160%
140%
4
120%
3
100%
80%
2
60%
40%
Vifb-Vin
Vih
1
20%
Vil
0%
-50 -25
0
25
50
75 100 125 150
0
-50
Figure 10 -Normalized Rdson (%) vs Tj (oC)
-25
0
25
50
Isd min 3s
isd typ
Isd max 3s
8
Max. specified
7
100 125 150
Figure 11 - Vih, Vil & Vifb -Vin (V) vs Tj (oC)
100
9
75
6
5
4
10
Typical value
3
2
1
0
0
15
30
45
60
Figure 12 - Error (+/-A) vs Iload (A)
8
1
100
1000
10000
Figure 13 - Isd (A) vs RIfb (Ohm)
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IR3311(S)
100
5°C/W
15°C/W
35°C/W 1'' f oot
60°C/W s td f ooprint
50
45
40
35
30
25
10
20
15
10
single pulse
10 Hz rth=60°C/W dT=25°C
100Hz rth=60°C/W dT=25°C
1kHz rth=60°C/W dT=25°C
5
0
-50
0
50
100
150
200
1
0.001
Figure 14 - Max. DC current (A) vs Temp. (°C)
100
0.01
0.1
1
10
Figure 15 - Max. I (A) vs inductance (mH)
100
60°C/W free air
5°C/W
Current path capability
should be above those
10
10
Loaad Characteristic
should be above those
curves
1
T=25°C free air/ std. footprint
T=100°C free air/ std. footprint
0.1
1
1E-05 0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 16 - I out (A) vs Protection resp. Time (s)
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0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 17 - Rth (oC/W) vs Time (s)
9
IR3311(S)
Case Outline - TO220 (5 lead)
IRGB 01-3042 01
10
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IR3311(S)
Case Outline 5 Lead - D2PAK (SMD220)
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11
IR3311(S)
Tape & Reel
5 Lead - D2PAK (SMD220)
01-3071 00 / 01-3072 00
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q100] market.
10/21/2003
12
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