PD - 96064
SMPS MOSFET
IRLR7811WCPbF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
30V
10.5mΩ
19nC
Benefits
Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l
D-Pak
IRLR7811WCPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 100°C
VGS
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation*
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
64
45
260
71
1.5
0.48
± 12
-55 to + 175
Units
A
W
W/°C
V
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
2.1
50
110
°C/W
Notes through are on page 9
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1
05/24/06
IRLR7811WCPbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th) /∆TJ Gate Threshold Voltage Coefficient
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Q sw
Qg
Qoss
Rg
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge Control Fet
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Total Gate Charge Sync Fet
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
58
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
27
5.8
7.0
1.5
-5.0
–––
–––
–––
–––
–––
21
5.0
1.7
6.6
5.5
8.3
17
10
1.6
18
4.8
11
23
2260
420
180
Max.
–––
–––
10.5
15
2.5
–––
30
150
100
-100
–––
31
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A
mΩ
VGS = 4.5V, ID = 12A
V
VDS = VGS, ID = 250µA
mV/°C
VDS = 24V, VGS = 0V
µA
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
nA
VGS = -12V
S
VDS = 15V, ID = 12A
nC
VDS = 20V
VGS = 4.5V
nC ID = 12A
VDS = 16V, VGS = 0V
ns
VDD = 16V, VGS = 4.5V
ID = 12A
Clamped Inductive Load
pF
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
140
12
7.1
mJ
A
mJ
Diode Characteristics
IS
ISM
VSD
t rr
Q rr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 64
showing the
A
G
integral reverse
––– ––– 260
S
p-n junction diode.
––– ––– 1.2
V
TJ = 25°C, IS = 12A, VGS = 0V
––– 30
45
ns
TJ = 25°C, IF =12A
––– 27
41
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLR7811WCPbF
10000
1000
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
1000
100
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
2.5V
1
0.1
100
2.5V
10
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.01
1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
10.00
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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7.0
I D = 64A
1.5
(Normalized)
T J = 175°C
R DS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α)
1000.00
1.00
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.00
10
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature
100 120 140 160 180
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLR7811WCPbF
10000
6
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VDS = 24V
VDS = 15V
5
VGS , Gate-to-Source Voltage (V)
Coss = Cds + Cgd
C, Capacitance(pF)
I D = 12A
Ciss
1000
Coss
Crss
4
2
1
100
0
1
10
0
100
5
10
15
20
25
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
I SD , Reverse Drain Current (A)
100
TJ = 175 ° C
10
T J= 25 ° C
1
V GS = 0 V
0.5
1.0
1.5
2.0
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1msec
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
0.0
100µsec
10
2.5
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLR7811WCPbF
RD
V DS
70
LIMITED BY PACKAGE
VGS
60
D.U.T.
RG
+
-VDD
I D , Drain Current (A)
50
VGS
40
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
10
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJC )
10
1
D = 0.50
Thermal Response
0.20
0.10
0.05
0.1
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t1/ t 2
J = P DM x Z thJC
+T C
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR7811WCPbF
400
ID
4.9A
8.5A
12A
15V
TOP
+
V
- DD
IAS
VGS
20V
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
D.U.T
RG
320
DRIVER
L
VDS
BOTTOM
240
160
80
0
25
50
75
100
Starting Tj, Junction Temperature
125
150
175
( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
VGS(th) Gate threshold Voltage (V)
2.5
50KΩ
2.0
12V
.2µF
.3µF
D.U.T.
1.5
ID = 250µA
+
V
- DS
VGS
1.0
3mA
IG
0.5
ID
Current Sampling Resistors
Fig 14. Gate Charge Test Circuit
0.0
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 13. Threshold Voltage Vs. Temperature
6
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IRLR7811WCPbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
+
-
-
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 15. For N-Channel HEXFET® Power MOSFETs
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IRLR7811WCPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
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IRLR7811WCPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.9mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
R G = 25Ω, IAS = 12A.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/2006
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9