Bulletin PD - 94567 rev.B 08/03 GB50XF120K IGBT SIXPACK MODULE VCES = 1200V Features Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient Ceramic DBC Substrate Low Stray Inductance Design IC = 50A @ TC=80°C tsc > 10µs @ TJ=150°C VCE(on) typ. = 2.45V ECONO2 6PACK Benefits Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance UL Approved E78996 Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ Tc=25°C Continuous Collector Current 75 A IC @ Tc=80°C Continuous Collector Current 50 ICM Pulsed Collector Current (Ref. Fig. C.T.5) 150 ILM Clamped Inductive Load Current 150 IF @ Tc=25°C Diode Continuous Forward Current 75 IF @ Tc=80°C Diode Continuous Forward Current 50 IFM Pulsed Diode Maximum Forward Current 150 VGE Gate-to-Emitter Voltage ±20 V PD @ Tc=25°C Maximum Power Dissipation (IGBT and Diode) 329 W PD @ Tc=80°C Maximum Power Dissipation (IGBT and Diode) 184 TJ Maximum Operating Junction Temperature TSTG Storage Temperature Range VISOL Isolation Voltage 150 °C -40 to +125 AC 2500 (MIN) V Thermal and Mechanical Characteristics Min Typical Maximum Units RθJC (IGBT) Junction-to-Case IGBT Parameter - - 0.38 °C/W RθJC (Diode) Junction-to-Case Diode - - 0.70 RθCS (Module) Case-to-Sink, flat, greased surface Mounting Torque (M5) Weight 1 - 0.05 - 2.7 - 3.3 - 170 - N*m g www.irf.com GB50XF120K Bulletin PD - 94567 rev.B 08/03 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) BV(CES) Parameter Collector-to-Emitter Breakdown Voltage ∆V(BR)CES/∆TJ Temp. Coefficient of Breakdown Voltage VCE(ON) Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1200 V VGE = 0 IC = 500µA - 0.31 - - 2.45 2.65 2.85 3.15 IC = 75A VGE = 15V - 2.85 - IC = 50A VGE = 15V TJ = 125°C - 3.45 - 4.0 4.9 6.0 Gate Threshold Voltage ∆VGE (th)/∆TJ Thresold Voltage temp. coefficient - -12 - ICES Zero Gate Voltage Collector Current - - 100 - 1000 - IGES Diode Forward Voltage Drop Gate-to-Emitter Leakage Current V VGE = 0 IC = 1mA (25°C - 125°C) - VGE (th) V FM V/°C IC = 50A VGE = 15V IC =75A VGE = 15V TJ = 125°C VCE = VGE IC = 250µA mV/°C VCE = VGE IC = 1mA (25°C-125°C) µA VGE = 0 VCE = 1200V VGE = 0 VCE = 1200V Tj = 125°C - 1.95 2.25 - 2.20 2.60 V IF = 50A - 2.05 - IF = 50A Tj = 125°C - 2.40 - IF = 75A Tj = 125°C - - ±200 IF = 75A nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions QG Total Gate Charge (turn-on) - 355 535 QGE Gate-to-Emitter Charge (turn-on) - 35 55 IC = 50A QGC Gate-to-Collector Charge (turn-on) - 165 250 EON Turn-On Switching Loss - 3600 4635 EOFF Turn-Off Switching Loss - 3740 4780 VGE = 15V RG = 10Ω L = 400µH ETOT Total Switching Loss - 7340 9415 Tj = 25°C nC VCC = 600A VGE = 15V µJ µJ IC = 50A VCC = 600V EON Turn-On Switching Loss - 5050 7100 EOFF Turn-Off Switching Loss - 5525 7750 VGE = 15V RG = 10Ω L = 400µH ETOT Total Switching Loss - 10575 14850 Tj = 125°C ns IC = 50A VCC = 600V td(on) Turn-On delay time - 60 80 tr Rise time - 40 60 VGE = 15V RG = 10Ω L =400µH td(off) Turn-Off delay time - 570 665 Tj = 125°C tf Fall time - 205 270 Cies Input Capacitance - 4945 - Coes Output Capacitance - 885 - VCC = 30V Cres Reverse Transfer Capacitance - 100 - f = 1Mhz RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area pF IC = 50A VCC = 600V VGE = 0 Tj = 150°C IC = 150A RG =10Ω VGE = 15V to 0 10 - - µs Tj = 150°C VCC = 900V VP = 1200V RG = 10Ω Irr Diode Peak Rev. Recovery Current - 87 - A VGE = 15V to 0 Tj = 125°C VCC = 600V IF = 50A L = 400µH VGE = 15V RG = 10Ω Energy losses include "tail" and diode reverse recovery. 2 www.irf.com GB50XF120K Bulletin PD - 94567 rev.B 08/03 100 100 90 VGE = 18V 80 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 80 50 60 50 40 40 30 30 20 20 10 10 0 0 0 1 2 3 4 5 0 6 1 2 3 4 5 6 VCE (V) VCE (V) Fig. 1 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs Fig. 2 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs 20 20 18 18 16 16 14 14 12 ICE = 25A 10 VCE (V) VCE (V) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 70 ICE (A) ICE (A) 70 90 ICE = 50A ICE = 100A 8 12 ICE = 25A 10 ICE = 50A ICE = 100A 8 6 6 4 4 2 2 0 0 5 10 15 20 5 10 V GE (V) 15 20 VGE (V) Fig. 4 - Typical VCE vs. VGE TJ = 125°C Fig. 3 - Typical VCE vs. VGE TJ = 25°C 10000 1000 tdOFF 9000 8000 Swiching Time (ns) Energy (µJ) tF EOFF 7000 6000 5000 EON 4000 3000 100 tdON tR 2000 1000 0 10 0 www.irf.com 20 40 60 80 100 120 0 20 40 60 80 100 IC (A) IC (A) Fig. 5 - Typ. Energy Loss vs. IC TJ = 125°C; L=400µH; VCE= 600V RG= 10Ω; VGE= 15V Fig. 6 - Typ. Switching Time vs. IC TJ = 125°C; L=400µH; VCE= 600V RG= 10Ω; VGE= 15V 120 3 GB50XF120K Bulletin PD - 94567 rev.B 08/03 10000 10000 9000 8000 Swiching Time (ns) Energy (µJ) 7000 EOFF 6000 5000 EON 4000 3000 tdOFF 1000 tF 100 tdON 2000 tR 1000 0 10 0 10 20 30 40 50 0 R G ( Ω) 10 20 30 50 R G (Ω) Fig. 7 - Typ. Energy Loss vs. RG TJ = 125°C; L=400µH; VCE= 600V ICE= 50A; VGE= 15V Fig. 8 - Typ. Switching Time vs. RG TJ = 125°C; L=400µH; VCE= 600V ICE= 50A; VGE= 15V 16 10000 Cies 14 400V 12 Coes 1000 600V 10 VGE (V) Capacitance (pF) 40 6 Cres 100 8 4 2 0 10 0 20 40 60 80 0 100 50 VCE (V) 100 150 200 250 300 350 400 Q G , Total Gate Charge (nC) Fig. 10 - Typical Gate Charge vs. VGE ICE = 50A; L = 600µH Fig. 9- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 80 350 70 300 60 250 Ptot (W) IC (A) 50 40 200 150 30 100 20 50 10 0 0 0 20 40 60 80 100 120 140 160 T C (°C) Fig. 11 - Maximum DC Collector Current vs. Case Temperature 4 0 20 40 60 80 100 120 140 160 T C (°C) Fig. 12 - Power Dissipation vs. Case Temperature www.irf.com GB50XF120K Bulletin PD - 94567 rev.B 08/03 1000 1000 100 100 IC A) IC (A) 20 µs 100 µs 10 10 1ms 1 10ms DC 0.1 1 1 10 100 1000 10 10000 100 V CE (V) 10000 V CE (V) Fig. 13 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 14 - Reverse Bias SOA TJ = 150°C; VGE =15V 100 700 90 25°C 125°C 600 500 T J = 25°C 80 T J = 125°C 70 60 400 IF (A) VCE (A) 1000 300 50 40 30 200 20 100 10 0 0 0 5 10 15 20 0.0 VGE (V) 1.0 2.0 3.0 4.0 V F (V) Fig. 16 - Typ. Diode Forward Characteristics tp = 80µs Fig. 15 - Typ. Transfer Characteristics VCE=50V; tp=10µs 120 120 RG = 4.7 Ω 100 100 RG = 10 Ω 80 RG = 22 Ω 60 IRR (A) IRR (A) 80 RG = 47 Ω 40 40 20 20 0 0 0 25 50 75 IF (A) 100 125 Fig. 17 - Typical Diode IRR vs. IF TJ = 125°C www.irf.com 60 150 0 10 20 30 40 50 R G ( Ω) Fig. 18 - Typical Diode IRR vs. RG TJ = 125°C; IF = 50A 5 GB50XF120K Bulletin PD - 94567 rev.B 08/03 120 100 IRR (A) 80 60 40 20 0 0 500 1000 1500 2000 2500 diF /dt (A/µs) Fig. 19- Typical Diode IRR vs. diF/dt ; VCC= 600V; VGE= 15V; ICE= 50A; TJ = 125°C 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 τJ 0.02 0.01 R1 R1 τJ τ1 R2 R2 τ2 τ1 R3 R3 τ3 τ2 τC τ τ3 Ci= τi/Ri Ci= τi/Ri 0.001 Ri (°C/W) τi (sec) 0.052 0.000444 0.062 0.005937 0.266 0.019420 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 τJ 0.01 R1 R1 τJ τ1 τ1 R2 R2 τ2 R3 R3 τ3 τ2 Ci= τi/Ri Ci= τi/Ri 0.001 τC τ τ3 Ri (°C/W) τi (sec) 0.116 0.000372 0.201 0.010642 0.382 0.034977 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com GB50XF120K Bulletin PD - 94567 rev.B 08/03 L L VCC DUT 80 V DUT 0 1000V Rg 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit R= diode clamp / DUT Driver VCC ICM L D C 900V - 5V DUT DUT / DRIVER DUT VCC Rg Fig.C.T.4 - Switching Loss Circuit Fig.C.T.3 - S.C. SOA Circuit VCC Rg Fig.C.T.5 - Resistive Load Circuit 800 80 800 160 700 70 700 140 600 60 600 120 TEST CURRENT 500 50 500 40 400 100 30 80 90% test current 300 60 ICE (A) tf 300 VCE (V) 400 ICE (A) VCE (V) 90% ICE 5% V CE 200 20 200 40 10% test current tr 5% ICE 100 10 0 0 100 0 5% V CE 20 0 Eon Loss Eoff Loss -100 -1.00 0.00 1.00 2.00 3.00 -10 4.00 Time(µs) Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 125°C using Fig. CT.4 www.irf.com -100 9.90 10.10 10.30 10.50 -20 10.70 Time (µs) Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 125°C using Fig. CT.4 7 GB50XF120K Bulletin PD - 94567 rev.B 08/03 Econo2 6Pak Package Outline Dimensions are shown in millimeters (inches) >@&219(; Econo2 6Pak Part Marking Information GB50XF120K GB50XF120K Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. 8 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/02 www.irf.com