Bulletin PD-21079 08/05
60EPU02PbF
60APU02PbF
Ultrafast Soft Recovery Diode
Features
• Ultrafast Recovery
• 175°C Operating Junction Temperature
• Lead-Free ("PbF" suffix)
trr = 35ns
IF(AV) = 60Amp
VR = 200V
Benefits
• Reduced RFI and EMI
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description/ Applications
These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited
for HF welding, power converters and other applications where switching losses are not significant portion of the total
losses.
Absolute Maximum Ratings
Parameters
Max
Units
VR
Cathode to Anode Voltage
200
V
IF(AV)
Continuous Forward Current, TC = 127°C
60
A
IFSM
Single Pulse Forward Current, TC = 25°C
800
IFRM
Maximum Repetitive Forward Current
120
TJ, TSTG
Operating Junction and Storage Temperatures
- 55 to 175
°C
Square Wave, 20kHz
Case Styles
60EPU02PbF
60APU02PbF
BASE
COMMON
CATHODE
2
BASE
COMMON
CATHODE
2
1
CATHODE
3
ANODE
TO-247AC (Modified)
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ANODE
1
ANODE
3
TO-247AC
1
60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBR, Vr
Breakdown Voltage,
Blocking Voltage
200
VF
Forward Voltage
IR
Reverse Leakage Current
-
-
-
0.98 1.08
-
0.81 0.88
V
IR = 100µA
V
IF = 60A
V
IF = 60A, TJ = 175°C
-
-
50
µA
VR = V R Rated
-
-
2
mA
TJ = 150°C, VR = V R Rated
CT
Junction Capacitance
-
87
-
pF
VR = 200V
LS
Series Inductance
-
8.0
-
nH
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
t rr
Reverse Recovery Time
IRRM
Peak Recovery Current
Reverse Recovery Charge
Qrr
Min Typ Max Units Test Conditions
-
-
35
-
28
-
ns
TJ = 25°C
-
50
-
TJ = 125°C
-
4
-
-
8
-
-
59
-
-
220
-
A
IF = 1.0A, diF/dt = 200A/µs, VR = 30V
IF = 60A
VR = 160V
diF /dt = 200A/µs
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
Thermal - Mechanical Characteristics
Parameters
Min
Typ
Max
Units
0.70
K/W
RthJC
Thermal Resistance, Junction to Case
RthCS
Thermal Resistance, Case to Heatsink
0.2
Wt
Weight
5.5
g
0.2
(oz)
T
Mounting Torque
Marking Device
1.2
N*m
60EPU02, 60APU02
Mounting Surface, Flat, Smooth and Greased
2
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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
1000
100
T = 175˚C
T J = 175˚C
100
Reverse Current - I R (µA)
Instantaneous Forward Current - I F (A)
1000
125˚C
10
1
25˚C
0.1
0.01
0.001
J
0
50
T = 125˚C
100
150
200
Reverse Voltage - VR (V)
J
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
T = 25˚C
J
Junction Capacitance - C T (pF)
10000
10
T J = 25˚C
1000
100
10
1
0
0.5
1
1.5
2
2.5
1
Forward Voltage Drop - VFM (V)
10
100
1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
Thermal Impedance Z
thJC
(°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
PDM
t1
t2
Notes:
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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3
60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
100
170
Average Power Loss ( Watts )
Allowable Case Temperature (°C)
180
160
150
DC
140
130
Square wave (D = 0.50)
80% Rated Vr applied
120
110
RMS Limit
80
60
40
20
see note (3)
100
0
20
40
60
80
0
100
0
Average Forward Current - IF(AV) (A)
20
40
60
80
100
Average Forward Current - IF(AV) (A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
800
70
IF = 90A
IF = 60A
IF = 30A
60
Vr = 160V
Tj = 125˚C
Tj = 25˚C
700
600
50
IF = 90A
IF = 60A
IF = 30A
500
Qrr ( nC )
trr ( ns )
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
40
400
300
30
200
20
10
100
Vr = 160V
Tj = 125˚C
Tj = 25˚C
100
di F /dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di F /dt
0
100
1000
di F /dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = T J - (Pd + PdREV) x R thJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = V R1 x IR (1 - D); IR @ VR1 = 80% rated V R
4
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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
Reverse Recovery Circuit
VR = 200V
0.01 Ω
L = 70µH
D.U.T.
D
di
F /dt
dif/dt
ADJUST G
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
trr
IF
tb
ta
0
2
Qrr
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.75 I RRM
1
di
/dt
di fF/dt
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 I RRM
extrapolated to zero current
4. Qrr - Area under curve defined by t rr
and IRRM
t rr x I RRM
Q rr =
2
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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5
60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
Outline Table
60EPU02PbF
3. 65 (0.14 4)
15.90 (0.626)
3. 55 (0.13 9)
DIA.
5. 30 (0 .20 9)
4.70 ( 0.185)
15.30 (0.602)
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0 .22 5)
BASE
COMMON
CATHODE
2
5.30 ( 0.208)
20.30 (0 .800 )
19.70 (0 .775 )
5.50 ( 0.217)
4. 50 (0.17 7)
1
(2 PLCS.)
3
1
CATHODE
14. 80 ( 0.583)
3
ANODE
4. 30 (0 .170)
14 .20 (0 .559 )
3. 70 (0 .145)
2. 20 (0 .08 7)
1. 40 ( 0 .05 6)
2. 40 (0.09 5)
M AX.
M AX .
1. 00 (0 .039)
0.80 ( 0.032)
0. 40 (0 .213)
10. 94 ( 0.430)
10 .86 (0 .427 )
Dimensions in millimeters and inches
60APU02PbF
BASE
COMMON
CATHODE
2
15 .90 (0 .626 )
3. 65 (0 .14 4)
3. 55 (0 .13 9)
DIA.
15 .30 (0 .602 )
5. 30 (0 .20 9)
4.70 ( 0.185)
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0 .22 5)
5.30 ( 0.208)
20 .30 (0 .800 )
ANODE
1
ANODE
3
19 .70 (0 .775 )
5.50 ( 0.217)
4. 50 (0 .17 7)
1
2
(2 PLCS.)
3
14. 80 ( 0.583)
14 .20 (0 .559 )
4. 30 (0 .17 0)
3. 70 (0 .14 5)
2. 20 (0 .08 7)
1. 40 (0 .05 6)
1. 00 (0 .03 9)
2. 40 (0 .09 5)
M AX .
M AX .
0.80 ( 0.032)
0. 40 (0 .21 3)
10. 94 ( 0.430)
10 .86 (0 .427 )
6
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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
Marking Information
EXAMPLE: THIS IS A 60EPU02
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN ASSEMBLY LINE "H"
EXAMPLE: THIS IS A 60APU02
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN ASSEMBLY LINE "H"
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
60EPU02
P035H
56
57
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = LEAD-FREE
YEAR 0 = 2000
WEEK 35
LINE H
PART NUMBER
60APU02
P035H
56
ASSEMBLY
LOT CODE
57
DATE CODE
P = LEAD-FREE
YEAR 0 = 2000
WEEK 35
LINE H
Ordering Information Table
Device Code
60
E
P
U
1
2
3
4
02 PbF
5
1
-
Current Rating (60 = 60A)
2
-
Circuit Configuration:
6
E = Single Diode
A = Single Diode, 3 pins
3
-
Package:
4
-
Type of Silicon:
5
-
Voltage Rating (02 = 200V)
6
-
P = TO-247AC (Modified)
U = UltraFast Recovery
none = Standard Production
PbF = Lead-Free
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60EPU02PbF, 60APU02PbF
Bulletin PD-21079 08/05
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 08/05
8
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