INFINEON SIGC06T120CS

SIGC06T120CS
IGBT Chip in NPT-technology
C
FEATURES:
• 1200V NPT technology
• 180µm chip
• short circuit prove
• positive temperature coefficient
• easy paralleling
Chip Type
VCE
SIGC06T120CS
1200V
This chip is used for:
• SGP02N120
Applications:
• drives, SMPS, resonant
applications
ICn
2A
Die Size
Package
2.45 x 2.25 mm2
sawn on foil
G
E
Ordering Code
Q67050-A4115A001
MECHANICAL PARAMETER:
Raster size
2.45 x 2.25
Area total / active
5.512 / 2.5
Emitter pad size
1.03x1.29
Gate pad size
0.42x0.56
mm
2
Thickness
180
µm
Wafer size
150
mm
Flat position
0
deg
Max.possible chips per wafer
2794 pcs
Passivation frontside
Photoimide
Emitter metalization
3200 nm Al Si 1%
Collector metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7251-S, Edition 2, 03.09.2003
SIGC06T120CS
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
1200
V
Collector-emitter voltage, Tj=25 °C
V CE
DC collector current, limited by Tjmax
IC
1)
A
Pulsed collector current, tp limited by Tjmax
Icpuls
6
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Ts t g
-55 ... +150
°C
1)
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Parameter
Symbol
Value
Conditions
min.
Unit
typ.
max.
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V , IC=300µA
1200
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC =2A
2.5
3.1
3.6
Gate-emitter threshold voltage
VGE(th)
IC =90µA , VGE=VCE
3.0
4.0
5.0
Zero gate voltage collector current
ICES
VCE=1200V , VGE=0V
0.2
µA
Gate-emitter leakage current
IGES
VCE=0V , VGE=20V
120
nA
V
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Input capacitance
Ci s s
V C E= 2 5 V ,
-
205
250
Output capacitance
Co s s
V GE= 0 V ,
-
28
34
Cr s s
f =1MHz
-
17
21
Reverse transfer capacitance
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Symbol
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
td(off)
Conditions*
Value
typ.
max.
-
23
30
I C =2A
-
16
21
V GE= + 1 5 / 0 V ,
-
260
340
-
61
80
Tj= 2 5 ° C
min.
Unit
ns
V C C =800V,
R G = 9 1Ω
Fall time
tf
* switching conditions different to LowLoss, Standard, IGBT3; under comparable switching conditions 40%
faster than Standard. Values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7251-S, Edition 2, 03.09.2003
SIGC06T120CS
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7251-S, Edition 2, 03.09.2003
SIGC06T120CS
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
SGP02N120
Package : TO220
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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Edited by INFINEON Technologies AI PS DD HV3, L 7251-S, Edition 2, 03.09.2003