LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DOT MATRIX DIGIT LED DISPLAY (4.0Inch) LMD5741/2CEGR-XX DATA SHEET DOC. NO : QW0905- LMD5741/2CEGR-XX REV. : A DATE : 15 - Mar. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/8 PART NO. LMD5741/2CEGR-XX Package Dimensions 76.0(2.99") 15.24X6 =91.44 (3.6") 13.0(0.512") 106.0 (4.17") Ø10.0(0.394") 15.24X4=60.96 (2.4") LMD5741/2CEGR-XX LIGITEK 6.0±0.5 ψ0.6 TYP 5.08X8=40.64 (1.6") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. 76.2 (3.0") LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/8 PART NO. LMD5741/2CEGR-XX Internal Circuit Diagram COLUMN PIN 2 1 1 18 2 18 2 3 3 13 3 13 4 4 12 4 12 5 7 10 7 10 11 ROW 1 16 2 15 LMD5741CEGR-XX 3 17 4 14 5 8 6 5 7 6 COLUMN PIN 2 1 1 3 4 ROW 1 16 2 15 LMD5742CEGR-XX 3 17 4 14 5 8 6 5 7 6 RED GREEN PIN 9 NO CONNECT 5 11 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/8 PART NO. LMD5741/2CEGR-XX Electrical Connection PIN NO. LMD5741CEGR-XX PIN NO. LMD5742CEGR-XX 1 Cathode Column 1 (Green) 1 Anode Column 1 (Green) 2 Cathode Column 2 (Green) 2 Anode Column 1 (Green) 3 Cathode Column 2 (Red) 3 Anode Column 2 (Red ) 4 Cathode Column 3 (Red) 4 Anode Column 3 (Red ) 5 Anode Row 6 5 Cathode Row 6 6 Anode Row 7 6 Cathode Row 7 7 Cathode Column 4 (Red) 7 Anode Column 4 (Red ) 8 Anode Row 8 8 Cathode Row 8 9 NO CONNECT 9 NO CONNECT 10 Cathode Column 5 (Green) 10 Anode Column 5 (Green) 11 Cathode Column 5 (Red) 11 Anode Column 5 (Red ) 12 Cathode Column 4 (Green) 12 Anode Column 4 (Green) 13 Cathode Column 3 (Green) 13 Anode Column 3 (Green) 14 Anode Row 4 14 Cathode Row 4 15 Anode Row 2 15 Cathode Row 2 16 Anode Row 1 16 Cathode Row 1 17 Anode Row 3 17 Cathode Row 3 18 Cathode Column 1 (Red) 18 Anode Column 1 (Red ) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/8 PART NO. LMD5741/2CEGR-XX Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT E G Forward Current Per Chip IF 30 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 120 mA Power Dissipation Per Chip PD 100 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode or anode Material Emitted CHIP PART NO GaAsP/GaP Orange LMD5741CEGR-XX GaP Green GaAsP/GaP Orange LMD5742CEGR-XX GaP Green Common Cathode Common Anode Electrical λP (nm) △λ Vf(v) (nm) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. 640 45 3.4 4.2 5.2 7.2 565 30 3.4 4.2 5.2 10.5 18.0 640 45 3.4 4.2 5.2 7.2 565 30 3.4 4.2 5.2 10.5 18.0 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 12.8 12.8 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/8 PART NO. LMD5741/2CEGR-XX Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λp nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/8 PART NO. LMD5741/2CEGR-XX Typical Electro-Optical Characteristics Curve E CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature( ℃) 550 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/8 PART NO. LMD5741/2CEGR-XX Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25℃ Forward Voltage@20mA Normalize @25℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 8/8 PART NO. LMD5741/2CEGR-XX Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11