BBY65... Silicon Tuning Diode High Q hyperabrupt tuning diode Very low capacitance spread Designed for low tuning voltage operation for VCO's in mobile communications equipment For low frequency control elements such as TCXOS and VCXOS High capacitance ratio and good C-V linearity BBY65-02V 1 2 Type BBY65-02V Package SC79 Configuration single LS(nH) Marking 0.6 F Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 15 V Forward current IF 50 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 1 Value Unit May-07-2003 BBY65... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 10 V - - 10 VR = 10 V, TA = 85 °C - - 100 AC Characteristics Diode capacitance pF CT 28.2 29.5 30.8 VR = 1 V, f = 1 MHz - 20.25 - VR = 2 V, f = 1 MHz - 9.8 - VR = 3 V, f = 1 MHz - 4.45 - 2.6 2.7 2.8 10 10.9 - pF VR = 0.3 V, f = 1 MHz VR = 4.7 V, f = 1 MHz Capacitance ratio CT0.3 / VR = 0.3 V, VR = 4.7 V CT4.7 Capacitance ratio CT1 /CT3 - 4.55 - pF rS - 0.6 0.9 VR = 1 V, VR = 3 V Series resistance VR = 1 V, f = 470 MHz 2 May-07-2003 BBY65... Diode capacitance CT = (VR ) f = 1MHz 40 pf CT 30 25 20 15 10 5 0 0 1 2 3 V 5 VR 3 May-07-2003