INFINEON PTFB212503FL

PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 2110 – 2170 MHz
Description
The PTFB212503EL and PTFB212503FL are 240-watt
LDMOS FETs intended for use in multi-standard cellular power
amplifier applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain, wide
signal bandwidth and reduced memory effects for unparalleled
DPD correctability. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
• Broadband internal input and output matching
VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz,
3GPP signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
• Enhanced for use in DPD error correction systems
• Wide video bandwidth
-15
40
ACPR
IMD Up
30
-30
Efficiency
25
-35
20
-40
15
-45
10
-50
5
-55
Efficiency (%)
IMD (dBc)
35
IMD Low
-25
0
32
34
36
38
40
42
44
46
48
PTFB212503FL
Package H-34288-4/2
Features
Two-carrier WCDMA Drive-up
-20
PTFB212503EL
Package H-33288-6
50
Output Power (dBm)
• Typical single-carrier WCDMA performance at 2170 MHz,
30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth =
3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF
- Average output power = 49.4 dBm
- Linear gain = 18 dB
- Efficiency = 37%
- Intermodulation distortion = –33 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 240 W
- Efficiency = 54 %
• Increased negative gate-source voltage range for
improved performance in Doherty peaking amplifiers
• Integrated ESD protection: Human Body Model, Class 2
(minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)
output power
• Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test
fixture)
VDD = 30 V, IDQ = 1.85 A, POUT = 55 W average, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
18.0
—
dB
Drain Efficiency hD
—
31
—
%
IMD
—
–33
—
dBc
Intermodulation Distortion
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 14
Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Specifications (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.85 A, POUT = 200 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
17
18
—
dB
Drain Efficiency hD
39
40
—
%
Intermodulation Distortion
IMD
—
–30
–28
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
Drain Leakage Current
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.05
—
W
Operating Gate Voltage
VDS = 30 V, IDQ = 1.85 A
VGS
2.3
2.8
3.3
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–6 to +10
V
Junction Temperature
TJ
200
°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 200 W CW)
RqJC
0.26
°C/W
Ordering Information
Type and Version
Package Outline
Description
Shipping
PTFB212503EL V1
H-33288-6
Thermally-enhanced slotted flange, single-ended Tray
PTFB212503EL V1 R250 H-33288-6
Thermally-enhanced slotted flange, single-ended
Tape & Reel, 250 pcs
PTFB212503FL V2
Thermally-enhanced earless flange, single-ended Tray
H-34288-4/2
PTFB212503FL V2 R250 H-34288-4/2
Data Sheet
Thermally-enhanced earless flange, single-ended
2 of 14
Tape & Reel, 250 pcs
Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1.85 A, 3GPP signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
VDD = 30 V, IDQ = 1.85 A ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-25
20
50
19
40
2170 MHz Up
-35
2140 MHz Up
Gain (dB)
IMD (dBc)
2140 MHz Low
2110 MHz Low
-40
2110 MHz Up
-45
Gain
18
30
17
20
Efficiency
16
-50
-55
15
32
34
36
38
40
42
44
46
48
50
0
33
35
37
CW Power Sweep
Gain & Efficiency vs. Output Power
55
18
45
Gain
35
16
25
Efficiency
15
14
5
42
44
46
48
50
49
51
52
-10
RL
50
-15
45
-20
Efficiency
40
35
-25
-30
IMD 3
30
25
-35
-40
Gain
20
-45
15
54
-50
2070
Output Power (dBm)
Data Sheet
47
-5
55
Gain (dB) / Efficiency (%)
19
40
45
60
Drain Efficiency (%)
65
38
43
VDD = 30 V, IDQ = 1.85 A, PO UT = 100 W
20
15
41
Two-tone Broadband Performance
VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz
17
39
Output Power (dBm)
Output Power (dBm)
Gain (dB)
10
Return Loss (dB), IMD (dBc)
-30
Efficiency (%)
2170 MHz Low
2090
2110
2130
2150
2170
2190
2210
Frequency (MHz)
3 of 14
Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
Two-tone Drive-up
VDD = 30 V, IDQ = 1.85 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
VDD = 30 V, IDQ = 1.85 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
45
-25
40
Efficiency
-40
25
-45
20
15
IMD 3rd
-55
10
-60
40
Gain
Gain (dB)
30
-50
19
35
-35
50
Efficiency
Efficiency (%)
IMD (dBc)
-30
20
18
30
17
20
16
10
5
-65
15
0
37
39
41
43
45
47
49
51
53
0
37
55
39
41
43
45
47
49
51
53
55
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Third Order Intermodulation Distortion
vs. Output Power
Intermodulation Distortion
VDD = 30 V, IDQ = 1.85 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
VDD = 30 V, IDQ = 1.85 A,
-20
-20
-25
-30
2110 MHz
-35
2140 MHz
-40
3rd Order
-30
IMD (dBc)
IMD (dBc)
Efficiency (%)
-20
2170 MHz
-45
-50
5th
-40
7th
-50
-60
-55
-60
-70
35
40
45
50
55
35
Output Power, PEP (dBm)
Data Sheet 40
45
50
55
Output Power, PEP (dBm)
4 of 14
Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
CW Performance
Gain vs. Output Power
CW Performance
VDD = 30 V, IDQ = 1.85 A, ƒ = 2170 MHz
VDD = 30 V, ƒ = 2170 MHz
21
60
Efficiency
19
40
30
Gain
17
20
16
10
15
40
45
50
IDQ = 1.85 A
17
IDQ = 1.30 A
16
0
35
18
35
55
40
Output Power (dBm)
VDD = 30 V, IDQ = 1.85 A, PO UT = 63 W
60
50
-40
40
IM3
30
20
Efficiency
-70
10
-80
0
35
37
39
41
43
45
47
49
Gain (dB) / Efficiency (%)
-30
60
Drain Efficiency (%)
IM3 (dBc)
-20
33
0
55
RL
50
-5
-10
45
40
-15
-20
Efficiency
35
-25
IM3
30
-30
25
20
-35
Gain
-40
15
-45
10
51
-50
1960
2020
2080
2140
2200
2260
2320
Frequency (MHz)
Output Power (dBm)
Data Sheet
55
Single-carrier WCDMA, 3GGP Broadband
VDD = 30 V, IDQ = 1.85 A ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8.5 dB, BW 3.84 MHz
-60
50
Output Power (dBm)
Single-carrier WCDMA
-50
45
Return Loss (dB) / IM3 (dBc)
18
IDQ = 2.11 A
50
Power Gain (dB)
Gain (dB)
20
19
Drain Efficiency (%)
+25°C
+85° C
–10° C
5 of 14
Rev. 07, 2010-11-04
Z Load
Z Load
G
S
2200 MHz
0. 1
Z Source
Z Source W
Frequency
W
<---
A
2080 MHz
Z Load W
MHz
R
jX
R
jX
2080
2.42
–5.57
1.34
–4.23
2110
2.31
–5.36
1.32
–4.12
2140
2.21
–5.15
1.29
–4.01
2170
2.12
–4.96
1.27
–3.91
2200
2.04
–4.77
1.25
–3.81
0. 2
0. 3
See next page for reference circuit information
Data Sheet 6 of 14
Rev. 07, 2010-11-04
0.3
0.2
0.1
D
Z Source
Z0 = 50 Ω
0.0
Broadband Circuit Impedance
DT OW ARD LOA
GT HS
N
E
L
VE
Confidential, Limited Internal Distribution
0.1
- W AV E LE NGT H
S T OW
A
RD G
PTFB212503EL
PTFB212503FL
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Reference Circuit
C802
1000 pF
S2
8
C801
1000 pF
C803
1000 pF
4
In
Out
NC
2
1
NC
3
6
7
5
R802
100 Ohm
R804
1200 Ohm
2
C
4
1
S
B
3
S3
S1
R801
10 Ohm
3
E
R805
1300 Ohm
R803
10 Ohm
TL104
TL138
TL120
TL110
R102
10 Ohm
TL129
2
TL133
TL108
3
1
TL128
TL113
2
3
1
TL136
C104
10 pF
TL103
TL124
RF_IN
C101
7.5 pF
TL126
TL105
TL137
TL130 TL116 TL115 TL117 TL119 TL107 TL123 TL122
1
C105
4700000 pF
3
3
GATE DUT
(Pin A)
TL118
C102
2.4 pF
1
TL102
TL112
H=20 mil
RO/RO4350B1
4
2
TL111
e r=3.48
TL132 TL106
2
1
2
3
C106
4700000 pF
2
C103
10 pF
3
TL125
1
TL101
R101
10 Ohm
TL131
TL121
TL135
TL134
TL109
TL127 TL114
3
2
b 2 1 2 5 0 3e f l _ b d i n _ 0 8- 0 4 - 2 0 1 0
1
Reference circuit input schematic for ƒ = 2170 MHz
TL228
TL206
TL209
TL231
1
C204
10000000pF
TL230
2
1
3
TL226
1
2
TL232
3
1
2
3
VDD
C210
10000000 pF
C208
1000000 pF
C206
2200000 pF
TL208
TL229
2
3
DUT
(Pin D)
C201
1.2 pF
TL221
DRAIN DUT
(Pin C)
TL218
TL201
TL215
TL217
TL224
TL207
TL223
2
1
DUT
(Pin D)
e
TL204
TL219
C203
6.2 pF
TL202
TL203
TL220
TL225
RF_OUT
4
TL222
r=3.48
H=20 mil
RO/RO4350B1
TL216
3
C207
2200000 pF
TL205
TL234
TL214
2
C202
1.2 pF
C209
1000000 pF
C205
10000000 pF
TL213
3
1
b 2 1 2 5 0 3e f l _ b d o u t _0 8 - 0 4 - 2 0 1 0
2
TL233
3
2
1
TL227
Reference circuit output schematic for ƒ = 2170 MHz
Data Sheet 1
TL210
TL212
2
TL211
3
1
3
7 of 14
C211
10000000 pF
VDD
Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT
PTFB212503EL or PTFB212503FL
PCB
0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 2170 MHz
Transmission
Electrical Dimensions: mm Line
Characteristics Dimensions: mils
Input
TL101
0.043 l, 54.17 W W = 1.016, L = 3.594
W = 40, L = 142
TL102
0.107 l, 63.89 W W = 0.762, L = 9.050
W = 30, L = 356
TL103
0.044 l, 63.89 W W = 0.762, L = 3.734
W = 30, L = 147
TL104
0.031 l, 34.72 W W = 1.981, L = 2.540
W = 78, L = 100
TL105
W1 = 1.270, W2 = 2.286
W1 = 50, W2 = 90
TL106
W1 = 17.780, W2 = 12.700
W1 = 700, W2 = 500
W1 = 13.970, W2 = 5.334, L = 2.032
W1 = 550, W2 = 210, L = 80
TL107 (taper)
0.027 l, 6.67 W / 15.80 W TL108, TL109
0.012 l, 54.17 W W1 = 1.016, W2 = 1.016, W3 = 1.016
W1 = 40, W2 = 40, W3 = 40
TL110
0.012 l, 54.17 W W1 = 1.016, W2 = 1.270, W3 = 1.016
W1 = 40, W2 = 50, W3 = 40
TL111, TL112
0.012 l, 63.89 W TL113, TL114, TL121
W1 = 0.762, W2 = 0.762, W3 = 1.016
W1 = 30, W2 = 30, W3 = 40
W = 1.016
W = 40
W = 5.334, L = 0.000
W = 210, L = 0
TL115
0.000 l, 15.80 W TL116 (taper)
0.013 l, 15.80 W / 47.12 W W1 = 5.334, W2 = 1.270, L = 0.991
W1 = 210, W2 = 50, L = 39
TL117
0.000 l, 15.80 W W1 = 5.334, W2 = 5.334, W3 = 0.025
W1 = 210, W2 = 210, W3 = 1
TL118
0.000 l, 144.35 W W = 0.025, L = 0.025
W = 1, L = 1
TL119
0.000 l, 15.80 W W = 5.334, L = 0.000
W = 210, L = 0
TL120
0.018 l, 54.17 W W = 1.016, L = 1.524
W = 40, L = 60
W1 = 13.970, W2 = 1.016, W3 = 13.970
W4 = 1.016
W1 = 550, W2 = 40, W3 = 550,
W4 = 40
TL122
TL123
0.005 l, 6.67 W W = 13.970, L = 0.381
W = 550, L = 15
TL124
0.032 l, 47.12 W W = 1.270, L = 2.692
W = 50, L = 106
TL125, TL137
0.026 l, 54.17 W W = 1.016, L = 2.159
W = 40, L = 85
TL126
0.016 l, 31.24 W W = 2.286, L = 1.270
W = 90, L = 50
TL127, TL128
0.095 l, 54.17 W W = 1.016, L = 8.001
W = 40, L = 315
TL129
0.012 l, 54.17 W W = 1.016, L = 1.016
W = 40, L = 40
TL130
0.134 l, 47.12 W W = 1.270, L = 11.151
W = 50, L = 439
TL131
0.012 l, 54.17 W W = 1.016, L = 1.021
W = 40, L = 40
TL132
0.053 l, 6.67 W W = 13.970, L = 4.064
W = 550, L = 160
TL133, TL134
0.030 l, 54.17 W W = 1.016, L = 2.540
W = 40, L = 100
TL135, TL136
0.002 l, 54.17 W W = 1.016, L = 0.127
W = 40, L = 5
W1 = 1.016, W2 = 1.981
W1 = 40, W2 = 78
TL138
table continued on page 9
Data Sheet
8 of 14
Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission
Electrical Line
Characteristics Dimensions: mm Dimensions: mils
Output
TL201
0.054 l, 4.84 W W = 19.685, L = 4.064
W = 775, L = 160
TL202, TL203
0.016 l, 28.85 W W = 2.540, L = 1.270
W = 100, L = 50
TL204
0.078 l, 39.51 W W = 1.651, L = 6.426
W = 65, L = 253
TL205
0.032 l, 16.90 W W = 4.928, L = 2.540
W = 194, L = 100
TL206
0.032 l, 17.05 W W = 4.877, L = 2.540
W = 192, L = 100
W1 = 17.780, W2 = 0.025, W3 = 17.780
W4 = 0.025
W1 = 700, W2 = 1, W3 = 700, W4 = 1
TL207
TL208, TL211
0.092 l, 25.04 W W = 3.048, L = 7.341
W = 120, L = 289
TL209, TL234
0.010 l, 25.04 W W = 3.048, L = 0.762
W = 120, L = 30
TL210, TL232
0.098 l, 25.04 W W = 3.048, L = 7.823
W = 120, L = 308
TL212, TL229
0.038 l, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 3.048
W1 = 120, W2 = 120, W3 = 120
TL213, TL214, TL230, 0.029 l, 25.04 W TL231
W1 = 3.048, W2 = 3.048, W3 = 2.286
W1 = 120, W2 = 120, W3 = 90
TL215
0.003 l, 4.84 W W = 19.685, L = 0.254
W = 775, L = 10
TL216 (taper)
0.074 l, 5.33 W / 39.51 W W1 = 17.780, W2 = 1.651, L = 5.588
W1 = 700, W2 = 65, L = 220
TL217 (taper)
0.010 l, 4.84 W / 5.33 W TL218
W1 = 19.685, W2 = 17.780, L = 0.762
W1 = 775, W2 = 700, L = 30
W1 = 12.700, W2 = 17.780
W1 = 500, W2 = 700
TL219
W1 = 1.651, W2 = 2.540
W1 = 65, W2 = 100
TL220
W1 = 1.270, W2 = 2.540
W1 = 50, W2 = 100
TL221, TL222
0.000 l, 144.35 W W = 0.025, L = 0.025
W = 1, L = 1
TL223, TL224
0.000 l, 5.33 W W = 17.780, L = 0.025
W = 700, L = 1
TL225
0.047 l, 47.12 W W = 1.270, L = 3.912
W = 50, L = 154
TL226, TL233
0.023 l, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 1.829
W1 = 120, W2 = 120, W3 = 72
Data Sheet 9 of 14
Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
LTN/PTFB212503EF
Test Fixture Part No. Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
RO4350, .020
C802
RO4350, .020
(60)
(60)
C204
C801
R804
S3
C803
R805
+
R802
C208
S1
R801
10 µF
C206
+
R803
S2
C210
C201
R102
C104
C105
RF_IN
RF_OUT
C101
C203
C102
C106
R101
C202
C103
C205
C207
+
10 µF
C209
C211
PTFB212503_OUT_04
PTFB212503_IN_04
b212503efl_CD_08-04-2010
Reference circuit assembly diagram (not to scale)
Data Sheet
10 of 14
Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Components Information
Component Description
Suggested Manufacturer
P/N Input
C101
Chip capacitor, 7.5 pF
ATC
ATC100B7R5BW500XB
C102
Chip capacitor, 2.4 pF
ATC
ATC100B2R4BW500XB
C103, C104
Chip capacitor, 10 pF
ATC
ATC100A100JW500XB
C105, C106
Chip capacitor, 4.7 µF
Digi-Key
493-2372-2-ND
C801, C802, C803
Capacitor, 1000 pF
Digi-Key
PCC1772CT-ND
R101, R102, R803
Resistor, 10 W
Digi-Key
P10ECT-ND
R801
Resistor, 10 W
Digi-Key
P10GCT-ND
R802
Resistor, 100 W
Digi-Key
P101ECT-ND
R804
Resistor, 1200 W
Digi-Key
P1.2KGCT-ND
R805
Resistor, 1300 W
Digi-Key
P1.3KGCT-ND
S1
Transistor Digi-Key
BCP56
S2
Voltage Regulator
Digi-Key
LM78L05ACM-ND
S3
Potentiometer, 2k W
Digi-Key
3224W-202ECT-ND
Output
C201, C202
Chip capacitor, 1.2 pF
ATC
ATC100A1R2BW500XB
C203
Chip capacitor, 6.2 pF
ATC
ATC100B6R2JW500XB
C204, C211
Capacitor, 10 µF
Digi-Key
587-1818-2-ND
C205, C210
Capacitor, 10 µF
Garrett Electronics 281M5002106K
C206, C207
Chip capacitor, 2.2 µF
Digi-Key
445-1447-2-ND
C208, C209
Chip capacitor, 1 µF
Digi-Key
445-1411-2-ND
Data Sheet 11 of 14
Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-33288-6
45° X 2.032
[45° X .080]
4X 30°
4X R1.524
[R.060]
2X 5.080
[.200] (2 PLS)
4X 1.143
[.045] (4 PLS)
V
D
4.889±.510
[.192±.020]
V
S
CL
2X R1.626
[R.064]
G
E
9.398
[.370]
9.779
[.385]
19.558±.510
[.770±.020]
F
H -33288 - 6_ po _02 -18 - 2010
CL
2X 12.700
[.500]
2X 22.860
[.900]
27.940
[1.100]
22.352±.200
[.880±.008]
1.575
[.062] (SPH)
4.039 +.254
–. 127
010
[.159 +.
–. 005 ]
CL
34.036
[1.340]
1.016
[.040]
Diagram Notes—unless otherwise specified:
Data Sheet
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: G = gate, S = source, D = drain, V = VDD, E, F = N.C.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
12 of 14
Rev. 07, 2010-11-04
PTFB212503EL
PTFB212503FL
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-34288-4/2
22.860
[.900]
45° X 2.032
[45° X .080]
2X 5.080
[.200]
2X 1.143
[.045]
C
L
2X 30°
V
D
V
9.779
[.385]
9.398
[.370]
C
L
4X R0.508+.381
-.127
R.020+.015
-.005
19.558±.510
[.770±.020]
G
]
[
4.889±.510
[.192±.020]
2X 12.700
[.500]
4.039+.254
-.127
.159+.010
-.005
22.352±.200
[.880±.008]
[
]
C 66065-A0003- C743- 01-0027 H- 34288- 4_
2 .dwg
1.575
[.062] (SPH)
C
L
1.016
[.040]
23.114
[.910]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate; V = VDD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 13 of 14
Rev. 07, 2010-11-04
PTFB212503EL V1/ PTFB212503FL V2
Confidential, Limited Internal Distribution
Revision History:
2010-11-04
Previous Version: 2010-08-05, Data Sheet
Page
Subjects (major changes since last revision)
1,2, 12
Changed eared flange package type
1
Updated VSWR specification to 10:1
Data Sheet
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Edition 2010-11-04
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
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including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
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Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of
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to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
14 of 14
Rev. 07, 2010-11-04