IRF IRF7233PBF

PD - 95939
IRF7233PbF
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = -12V
RDS(on) = 0.020Ω
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
±9.5
±6.0
±76
2.5
1.6
0.02
60
± 12
-55 to + 150
V
W/°C
mJ
V
°C
Max.
Units
50
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
11/9/04
IRF7233PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
V(BR)DSS
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-14
-12
–––
–––
–––
-0.6
3.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -5.0mA
––– –––
V
VGS = 0V, ID = -250µA
0.001 ––– V/°C Reference to 25°C, ID = -1mA
0.013 0.020
VGS = -4.5V, ID = -9.5A ‚
Ω
0.023 0.033
VGS = -2.5V, ID = -6.0A ‚
––– –––
V
VDS = VGS, ID = -250µA
––– –––
S
VDS = -10V, ID = -9.5A
––– -10
VDS = -12V, VGS = 0V
––– -1.0
VDS = -9.6V, VGS = 0V
µA
––– -100
VDS = -12V, VGS = 0V, TJ = 70°C
––– -100
nA VGS = -12V
––– 100
VGS = 12V
49
74
ID = -9.5A
9.3
14
nC
VDS = -10V
22
32
VGS = -5.0V‚
26 –––
VDD = -10V
540 –––
ID = -9.5A
ns
77 –––
RD = 1.0Ω
370 –––
RG = 6.2Ω ‚
4530 6000
VGS = 0V
2400 –––
pF
VDS = -10V
2220 –––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-76
–––
–––
–––
–––
43
35
-1.2
65
52
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V ‚
TJ = 25°C, IF = -2.5A
di/dt = 100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
ƒ When mounted on 1 inch square copper board, t<10 sec
„ Starting TJ = 25°C, L = 1.3mH
RG = 25Ω, IAS = 9.5A.
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IRF7233PbF
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
80
TOP
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
60
40
20
-1.5V
0
0
2
4
20µs PULSE WIDTH
TJ = 25°C
6
A
8
80
60
40
20
0
10
0
-VDS , Drain-to-Source Voltage (V)
TJ = 25°C
TJ = 150°C
10
VDS = -10V
20µs PULSE WIDTH
1.5
2.0
2.5
Fig 3. Typical Transfer Characteristics
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A
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
2.0
-VGS , Gate-to-Source Voltage (V)
4
6
8
10
A
Fig 2. Typical Output Characteristics
100
1.0
2
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
-1.5V TJ = 150°C
ID = -9.5A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7233PbF
10
V GS = 0V,
f = 1kHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
5000
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
6000
Ciss
4000
3000
Coss
Crss
2000
0
2
4
6
8
10
12
6
4
2
0
20
30
40
50
60
70
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
TJ = 150°C
100
TJ = 25°C
10
VGS = 0V
1
0.0
1.0
2.0
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS =-10V
8
0
A
ID = -9.5A
A
3.0
100us
1ms
10
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7233PbF
EAS , Single Pulse Avalanche Energy (mJ)
10.0
-ID , Drain Current (A)
8.0
6.0
4.0
2.0
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
140
ID
-4.2A
-7.6A
BOTTOM -9.5A
TOP
120
100
80
60
40
20
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7233PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
5
H
E
1
2
3
0.25 [.010]
4
A
e
e1
MIN
1.35
1.75
8X b
MAX
A1 .0040
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
0.25 [.010]
MILLIMET ERS
MAX
.0688
e1
6X
INCHES
MIN
.0532
A
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
6
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IRF7233PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
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