IRF IRFP460P

PD-93946A
IRFP460P
l
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Dynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Solder Plated for Reflowing
HEXFET® Power MOSFET
D
VDSS = 500V
RDS(on) = 0.27Ω
G
Description
ID = 20A
S
Third Generation HEXFET®s
from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance
between pins to meet the requirements of most safety
specifications.
TO-247AC
The solder plated version of the TO-247 allows the reflow
soldering of the package heatsink to a substrate material.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Maximum Reflow Temperature
20
13
80
280
2.2
± 20
960
20
28
3.5
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
230 (Time above 183 °C
should not exceed 100s)
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.24
–––
0.45
–––
40
°C/W
1
01/17/01
IRFP460P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
500
–––
–––
2.0
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
59
110
58
LD
Internal Drain Inductance
–––
5.0
LS
Internal Source Inductance
–––
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4200
870
350
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.27
Ω
VGS = 10V, ID = 12A „
4.0
V
VDS = V GS, ID = 250µA
–––
S
VDS = 50V, ID =12A
25
VDS = 500V, VGS = 0V
µA
250
VDS = 400V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS =-20V
210
ID = 20A
29
nC VDS = 400V
110
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 250V
–––
ID = 20A
ns
–––
RG = 4.3Ω
–––
RD = 13Ω,See Fig. 10 „
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoverCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 20
showing the
A
G
integral reverse
––– ––– 80
S
p-n junction diode.
––– ––– 1.8
V
TJ = 25°C, IS = 20A, VGS = 0V „
––– 570 860
ns
TJ = 25°C, IF = 20A
––– 5.7 8.6
µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L =4.8mH
RG = 25Ω, IAS = 20A. (See Figure 12)
2
ƒ ISD ≤ 20A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
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IRFP460P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFP460P
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
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IRFP460P
VDS
VGS
RD
D.U.T.
RG
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP460P
1 5V
D R IV E R
L
VDS
D .U .T
RG
+
V
- DD
IA S
20V
A
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
10 V
50KΩ
12V
QGS
.2µF
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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IRFP460P
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
Period
P.W.
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET®s
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7
IRFP460P
Package Outline
TO-247AC
Dimensions are shown in millimeters (inches)
-D -
3.65 (.143 )
3.55 (.140 )
15.90 (.6 26)
15.30 (.6 02)
-B -
0.25 (.01 0) M
5.3 0 (.20 9)
4.7 0 (.18 5)
D B M
2 .50 (.089)
1 .50 (.059)
4
-A5.50 (.21 7)
2 0.30 (.80 0)
1 9.70 (.77 5)
1
2
NOTES:
5.50 (.2 17)
4.50 (.1 77)
2X
1 D IM E N S IO N IN G & T O L E R A N C IN G
P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E
T O -2 4 7 -A C .
3
-C -
1 4.80 (.583 )
1 4.20 (.559 )
2 .40 (.094)
2 .00 (.079)
2X
5.45 (.21 5)
2X
4 .30 (.170 )
3 .70 (.145 )
L E A D A S S IG N M E N T S
0 .80 (.031)
3X 0 .40 (.016)
1 .40 (.056 )
3X 1 .00 (.039 )
0 .25 (.010 ) M
3.4 0 (.1 33)
3.0 0 (.1 18)
1
2
3
4
2.60 (.10 2)
2.20 (.08 7)
C A S
-
GATE
D R A IN
SOURCE
D R A IN
Part Marking Information
TO-247AC
E X A M P L E : T H IS IS A N IR F P E 30
W IT H A S S E M B L Y
LOT COD E 3A1Q
A
I N T E R N A T IO N A L
R E C T IF IE R
P AR T N UM B E R
IR F P E 3 0
LOGO
3A1Q
ASSEMBLY
LOT COD E
9302
DATE CO DE
(Y Y W W )
YY = YE A R
W W W EEK
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
8
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