NPN Silicon Transistors with High Reverse Voltage BFP 22 BFP 25 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BFP 23, BFP 26 (PNP) ● 1 3 2 Type Marking Ordering Code (tape and reel) BFP 22 BFP 25 – Q62702-F621 Q62702-F721 Pin Configuration 1 2 3 E B C Package1) TO-92 Maximum Ratings Parameter Symbol Values BFP 22 Unit BFP 25 Collector-emitter voltage VCE0 200 300 Collector-base voltage VCB0 200 300 Emitter-base voltage VEB0 Collector current IC 200 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 66 ˚C Ptot 625 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V 6 mA – 65 … + 150 Thermal Resistance Junction - ambient Rth JA ≤ 200 Junction - case2) Rth JC ≤ 135 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. K/W BFP 22 BFP 25 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 200 300 – – – – 200 300 – – – – 6 – – – – – – – – – – 100 100 20 20 nA nA µA µA – – 100 nA DC characteristics Collector-emitter breakdown voltage BFP 22 IC = 1 mA BFP 25 V(BR)CE0 Collector-base breakdown voltage BFP 22 IC = 100 µA BFP 25 V(BR)CB0 Emitter-base breakdown voltage IE = 100 µA V(BR)EB0 Collector-base cutoff current VCB = 160 V VCB = 250 V VCB = 160 V, TA = 150 ˚C VCB = 250 V, TA = 150 ˚C V ICB0 BFP 22 BFP 25 BFP 22 BFP 25 Emitter-base cutoff current VEB = 4 V IEB0 DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) hFE BFP 22 BFP 25 – 25 40 50 40 – – – – – – – – – – – – 0.4 0.5 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA BFP 22 BFP 25 VCEsat Base-emitter saturation voltage1) IC = 20 A, IB = 2 mA VBEsat – – 0.9 Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz fT – 70 – MHz Output capacitance VCB = 30 V, f = 1 MHz Cobo – 1.5 – pF AC characteristics 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. BFP 22 BFP 25 Total power dissipation Ptot = f (TA; TC) Operating range IC = f (VCE) D = 0, TA = 25 ˚C Permissible pulse load RthJA = f (tp) Collector current IC = f (VBE) VCE = 10 V, TA = 25 ˚C BFP 22 BFP 25 Collector cutoff current ICB0 = f (T) VCB = 160 V, 250 V Transition frequency fT = f (IC) VCE = 10 V, f = 20 MHz DC current gain hFE = f (IC) VCE = 10 V, TA = 25 ˚C