INFINEON SEMD3

SEMD3
NPN/PNP Silicon Digital Transistor Array
Preliminary data
• Switching circuit, inverter, interface circuit,
driver circuit
4
• Two (galvanic) internal isolated NPN/PNP
5
3
Transistors in one package
6
2
• Built in bias resistor (R1=10kΩ, R2 =10kΩ)
1
Tape loading orientation
Top View
3 2 1
WR
4 5 6
Marking on SOT666 package
(for example W R)
corresponds to pin 1 of device
C1
B2
E2
6
5
4
R2
R1
Position in tape: pin 1
same of feed hole
side
Direction of Unreeling
TR2
TR1
R1
R2
1
2
3
E1
B1
C2
EHA07176
Type
SEMD3
Marking
W1
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
50
Collector-base voltage
VCBO
50
Emitter-base voltage
VEBO
10
Input on Voltage
Vi(on)
20
DC collector current
IC
100
mA
Total power dissipation, TS = 75 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
RthJS
≤ 300
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Feb-26-2004
SEMD3
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
50
-
-
V(BR)CBO
50
-
-
ICBO
-
-
100
nA
IEBO
-
-
0.75
mA
hFE
30
-
-
-
-
-
0.3
V
Vi(off)
0.8
-
1.5
Vi(on)
1
-
2.5
Input resistor
R1
7
10
13
kΩ
Resistor ratio
R1/R2
0.9
1
1.1
-
fT
-
130
-
MHz
Ccb
-
3
-
pF
DC Characteristics
Collector-emitter breakdown voltage
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain 1)
IC = 5 mA, VCE = 5 V
VCEsat
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1) Pulse test: t < 300µs; D < 2%
2
Feb-26-2004
SEMD3
NPN Type
DC Current Gain hFE = f (I C)
Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration)
VCEsat = f (IC), hFE = 20
10 2
10 3
-
10 2
IC
hFE
mA
10 1
10 1
10 0 -1
10
10
0
10
1
mA
10
10 0
0
2
0.2
0.4
V
0.6
1
IC
VCEsat
Input on Voltage Vi(on) = f (IC )
Input off voltage Vi(off) = f (IC )
VCE = 0.3V (common emitter configuration)
VCE = 5V (common emitter configuration)
10 2
10 1
mA
mA
10 0
IC
IC
10 1
10 0
10 -1 -1
10
10
0
10
1
V
10
2
Vi(on)
10
-1
10
-2
0
0.5
1
1.5
2
V
3
Vi(off)
3
Feb-26-2004
SEMD3
PNP Type
DC Current Gain hFE = f (I C)
Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration)
VCEsat = f (IC), hFE = 20
10 2
10 3
-
10 2
IC
hFE
mA
10 1
10 1
10 0 -1
10
10
0
10
1
mA
10
10 0
0
2
0.2
0.4
V
0.6
IC
1
VCEsat
Input on Voltage Vi(on) = f (IC )
Input off voltage Vi(off) = f (IC)
VCE = 0.3V (common emitter configuration)
VCE = 5V (common emitter configuration)
10 2
10 1
mA
mA
10 0
IC
IC
10 1
10 0
10 -1 -1
10
10
0
10
1
V
10
2
Vi(ON)
10
-1
10
-2
0
0.5
1
1.5
V
2.5
Vi(off)
4
Feb-26-2004
SEMD3
Total power dissipation P tot = f (TS)
300
Ptot
mW
200
150
100
50
0
0
15
30
45
60
75
90 105 120 °C
150
TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
10 3
Ptotmax/ PtotDC
K/W
RthJS
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0
10 -1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
s
10
10 0 -7
10
0
tp
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
5
Feb-26-2004