IRF IRG4BH20K-SPBF

PD -95891
IRG4BH20K-SPbF
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• High short circuit rating optimized for motor control,
tsc =10µs @ VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• Industry standard D2Pak package
• Lead-Free
VCES = 1200V
VCE(on) typ. = 3.17V
G
@VGE = 15V, IC = 5.0A
E
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
D2Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
Units
1200
11
5.0
22
22
10
±20
130
60
24
-55 to +150
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.24
–––
6 (0.21)
2.1
–––
40
–––
Units
°C/W
g (oz)
1
04/10/07
IRG4BH20K-SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
1200 —
Emitter-to-Collector Breakdown Voltage „ 18
—
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
1.13
— 3.17
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 4.04
— 2.84
VGE(th)
Gate Threshold Voltage
3.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-10
gfe
Forward Transconductance …
2.3
3.5
—
—
ICES
Zero Gate Voltage Collector Current
—
—
—
—
IGES
Gate-to-Emitter Leakage Current
—
—
V(BR)CES
V(BR)ECS
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 2.5mA
4.3
IC = 5.0A
VGE = 15V
—
IC = 11A
See Fig.2, 5
V
—
IC = 5.0A , TJ = 150°C
6.5
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 1mA
—
S
VCE = 100 V, IC = 5.0A
250
VGE = 0V, VCE = 1200V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 1200V, TJ = 150°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
28
43
IC = 5.0A
4.4 6.6
nC VCC = 400V
See Fig.8
12
18
VGE = 15V
23
—
26
—
TJ = 25°C
ns
93 140
IC =5.0A, VCC = 960V
270 400
VGE = 15V, RG = 50Ω
0.45 —
Energy losses include "tail"
0.44 —
mJ See Fig. 9,10,14
0.89 1.2
—
—
µs
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 50Ω
23
—
TJ = 150°C,
28
—
IC = 5.0A, VCC = 960V
ns
100 —
VGE = 15V, RG = 50Ω
620 —
Energy losses include "tail"
1.7
—
mJ
See Fig. 10,11,14
7.5
—
nH
Between lead and center of die contact
435 —
VGE = 0V
44
—
pF
VCC = 30V
See Fig. 7
8.3
—
ƒ = 1.0MHz
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
ƒ Repetitive rating; pulse width limited by maximum
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50Ω,
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
junction temperature.
(See fig. 13a)
… Pulse width 5.0µs, single shot.
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
2
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IRG4BH20K-SPbF
16
F or both:
12
Load Current ( A )
Triangular wave:
Duty cycle: 50%
TJ = 125˚ C
T sink = 90˚ C
Gate drive as specified
Clamp voltage:
80% of rated
Power Dissipation = 15W
Sq uare wav e:
8
60% of rated
voltage
4
Ideal diodes
0
)
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector-to-Emitter Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
V GE = 15V
20µs PULSE WIDTH
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
100
100
10
TJ = 150 °C
TJ = 25 °C
1
V CC = 50V
5µs PULSE WIDTH
6
8
10
12
14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BH20K-SPbF
5.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
12
9
6
3
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
IC = 10 A
4.0
IC =
3.0
IC = 2.5 A
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
°C)
TTJJ ,, Junction
Junction Temperature
Temperature ( (°C
)
TC , Case Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
5A
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.01
0.00001
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BH20K-SPbF
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600
Cies
400
200
Coes
20
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
800
VCC = 400V
I C = 11A
16
12
8
4
Cres
0
1
10
0
100
VCE , Collector-to-Emitter Voltage (V)
0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
10
VCC = 960V
VGE = 15V
TJ = 25 °C
0.90 I C = 11A
0.85
0.80
0.75
10
20
30
40
RG R,GGate
Resistance
, Gate
Resistance(Ohm)
(Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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15
20
25
30
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.95
0
10
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.70
5
50
Ω
RG = 50Ohm
VGE = 15V
VCC = 960V
IC = 10 A
IC =
1
5A
IC = 2.5 A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
°C ))
JunctionTemperature
Temperature (( °C
TTJJ, ,Junction
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BH20K-SPbF
RG
TJ
VCC
4.0 VGE
100
Ω
= 50Ohm
= 150° C
= 960V
= 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
5.0
3.0
2.0
VGE = 20V
T J = 125 o C
10
1.0
0.0
0
2
4
6
8
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
10
1
SAFE OPERATING AREA
1
10
100
1000
10000
VCE, Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BH20K-SPbF
L
D.U.T.
VC *
50V
RL =
0 - 960V
1000V
c
960V
2 X [email protected]°C
480µF
960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 960V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRG4BH20K-SPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
7+,6,6$1,5)6:,7+
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$ $66(0%/<6,7(&2'(
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IRG4BH20K-SPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2007
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9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/