INFINEON IPB60R299CPA

IPB60R299CPA
CoolMOSTM Power Transistor
Product Summary
600
V DS
V
0.299 Ω
R DS(on),max
22
Q g,typ
nC
Features
• Lowest figure-of-merit Ron x Qg
PG-TO263-3
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Type
Package
Marking
IPB60R299CPA
PG-TO263-3
6R299A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
11
T C=100 °C
7
Pulsed drain current1)
I D,pulse
T C=25 °C
34
Avalanche energy, single pulse
E AS
I D=4.4 A, V DD=50 V
290
Avalanche energy, repetitive t AR1),2)
E AR
I D=4.4 A, V DD=50 V
0.44
Avalanche current, repetitive t AR1),2)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
Unit
A
mJ
4.4
A
V DS=0...480 V
50
V/ns
V GS
static
±20
V
Power dissipation
P tot
T C=25 °C
96
W
Operating temperature
Tj
-40 ... 150
°C
Storage temperature
T stg
-40 ... 150
Rev. 2.0
page 1
2009-09-09
IPB60R299CPA
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
Continuous diode forward current
IS
Diode pulse current1)
I S,pulse
34
Reverse diode dv /dt 3)
dv /dt
15
V/ns
Parameter
Symbol Conditions
Values
Unit
6.6
T C=25 °C
A
min.
typ.
max.
-
-
1.3
SMD version, device
on PCB, minimal
footprint
-
-
62
SMD version, device
on PCB, 6 cm2 cooling
area4)
-
35
-
MSL 1
-
-
245
°C
600
-
-
V
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
Thermal resistance, junction ambient
Soldering temperature,
reflow soldering
T sold
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0,44 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
1
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=6.6 A,
T j=25 °C
-
0.27
0.299
Ω
V GS=10 V, I D=6.6 A,
T j=150 °C
-
0.73
f =1 MHz, open drain
-
1.9
-
Ω
Gate resistance
Rev. 2.0
RG
page 2
2009-09-09
IPB60R299CPA
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1100
-
-
60
-
-
46
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
C o(er)
related5)
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
pF
Effective output capacitance, time
related6)
C o(tr)
-
120
-
Turn-on delay time
t d(on)
-
10
-
Rise time
tr
-
5
-
Turn-off delay time
t d(off)
-
40
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
5
-
Gate to drain charge
Q gd
-
7.6
-
Gate charge total
Qg
-
22
29
Gate plateau voltage
V plateau
-
5.0
-
V
-
0.9
1.2
V
-
300
-
ns
-
3.9
-
µC
-
26
-
A
V DD=400 V,
V GS=10 V, I D=6.6 A,
R G=4.3 Ω
ns
Gate Charge Characteristics
V DD=400 V, I D=6.6 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=6.6 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
Pulse width t p limited by T j,max
2)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3)
I SD≤I D, di /dt ≤200A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch.
4)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air.
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2009-09-09
IPB60R299CPA
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
100
limited by on-state
resistance
1 µs
75
10 µs
101
I D [A]
P tot [W]
100 µs
50
1 ms
DC
100
10 ms
25
10-1
0
0
40
80
120
100
160
101
T C [°C]
102
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
Z thJC=f(t P)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
45
10V
12 V
20 V
8V
30
0.5
I D [A]
Z thJC [K/W]
100
0.2
0.1
6V
0.05
10-1
15
0.02
5.5 V
0.01
5V
single pulse
4.5 V
10-2
10-5
0
10-4
10-3
10-2
10-1
100
t p [s]
Rev. 2.0
0
5
10
15
20
V DS [V]
page 4
2009-09-09
IPB60R299CPA
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
25
1.8
1.6
5V
20 V
20
12 V
6V
5.5 V
7V
1.4
6.5 V
10 V
6V
8V
1.2
10 V
I D [A]
R DS(on) [Ω]
5.5 V
15
10
5V
1
0.8
0.6
4.5 V
0.4
5
0.2
0
0
0
5
10
15
20
0
5
10
15
20
25
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=6.6 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
1
50
0.8
40
0.6
30
25 °C
I D [A]
R DS(on) [Ω]
parameter: T j
20
0.4
98 %
0.2
10
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.0
150 °C
typ
0
2
4
6
8
10
V GS [V]
page 5
2009-09-09
IPB60R299CPA
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=6.6 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
9
25 °C, 98%
8
7
25 °C
150 °C
400 V
I F [A]
V GS [V]
6
150 °C, 98%
101
120 V
5
4
100
3
2
1
10-1
0
0
5
10
15
20
0
25
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=4.4 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
300
700
660
E AS [mJ]
V BR(DSS) [V]
200
620
100
580
0
540
25
75
125
175
Rev. 2.0
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
page 6
2009-09-09
IPB60R299CPA
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
8
104
6
Ciss
C [pF]
E oss [µJ]
103
102
4
Coss
2
101
Crss
100
0
0
100
200
300
400
500
100
200
300
400
500
600
V DS [V]
V DS [V]
Rev. 2.0
0
page 7
2009-09-09
IPB60R299CPA
Definition of diode switching characteristics
Rev. 2.0
page 8
2009-09-09
IPB60R299CPA
PG-TO263-3: Outlines
• Extreme dv/dt rated
Rev. 2.0
page 9
2009-09-09
IPB60R299CPA
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 2.0
page 10
2009-09-09
NOTIFICATION
N° 040/10
Information on N-Channel MOSFET products designed for automotive
applications
Products affected:
SalesName
IPB60R099CPA
IPB60R199CPA
IPB60R299CPA
IPC60R075CPA
IPI60R099CPA
IPP60R099CPA
IPW60R045CPA
IPW60R075CPA
IPW60R099CPA
Package
PG-TO263-3-2
PG-TO263-3-2
PG-TO263-3-2
Bare Die
PG-TO262-3-1
PG-TO220-3-1
PG-TO247-3-41
PG-TO247-3-41
PG-TO247-3-41
Dear Customer,
The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This
operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM
converters. Using the device under such conditions may result in violation of the datasheet specification limits and
may lead to permanent damage of the device.
Please take care that in the context of the application described above the datasheet limits are not exceeded.
Best Regards
Michael Paulu
If you have any questions, please do not hesitate to contact your local Sales office.
2010-05-12
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