LC SOT-23 LED, Diffused Low Current LED LS S269, LY S269, LG S269 Besondere Merkmale ● ● ● ● ● ● eingefärbtes, diffuses Gehäuse extrem weitwinklig als optischer Indikator einsetzbar hohe Lichtstärke bei kleinen Strömen (typ. 2 mA) für alle SMT-Bestück- und Löttechniken geeignet gegurtet (8-mm-Filmgurt) ● ● ● ● ● ● VSO06723 Features colored, diffused package extrem wide-angle LED for use as optical indicator high luminous intensity at very low currents (typ. 2 mA) suitable for all SMT assembly and soldering methods available taped on reel (8 mm tape) Typ Type Emissionsfarbe Color of Emission Gehäusefarbe Color of Package Lichtstärke Luminous Intensity IF = 2 mA IV (mcd) Bestellnummer Ordering Code LS S269-BO super-red red diffused ≥ 0.16 Q62703-Q1566 LY S269-BO yellow yellow diffused ≥ 0.16 Q62703-Q1568 LG S269-BO green green diffused ≥ 0.16 Q62703-Q1570 Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min ≤ 2.0. Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0. Semiconductor Group 1 1998-04-07 LS S269, LY S269, LG S269 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Betriebstemperatur Operating temperature range Top – 55 … + 100 ˚C Lagertemperatur Storage temperature range Tstg – 55 … + 100 ˚C Sperrschichttemperatur Junction temperature Tj + 100 ˚C Durchlaßstrom Forward current IF 7.5 mA Stoßstrom Surge current t ≤ 10 µs, D = 0.005 IFM 150 mA Sperrspannung Reverse voltage VR 5 V Verlustleistung Power dissipation TA ≤ 25 ˚C Ptot 20 mW Wärmewiderstand Thermal resistance Sperrschicht / Luft Junction / air 1) Rth JA 750 K/W 1) 1) Auf Platine gelötet: Lötfläche ≥ 16 cm2 Soldered on PC board: pad size ≥ 16 cm2 Semiconductor Group 2 1998-04-07 LS S269, LY S269, LG S269 Kennwerte (TA = 25 ˚C) Characteristics Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit LS LY LG Wellenlänge des emittierten Lichtes (typ.) λpeak Wavelength at peak emission (typ.) IF = 7.5 mA 635 586 565 nm (typ.) λdom (typ.) 628 590 570 nm Spektrale Bandbreite bei 50 % Irel max (typ.) ∆λ Spectral bandwidth at 50 % Irel max (typ.) IF = 7.5 mA 45 45 25 nm Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV 2ϕ 140 140 140 Grad deg. Durchlaßspannung Forward voltage IF = 2 mA (typ.) VF (max.) VF 1.8 2.6 2.0 2.7 1.9 2.6 V V Sperrstrom Reverse current VR = 5 V (typ.) IR (max.) IR 0.01 10 0.01 10 0.01 10 µA µA (typ.) C0 3 3 12 pF (typ.) tr (typ.) tf 200 150 200 150 450 200 ns ns Dominantwellenlänge Dominant wavelength IF = 7.5 mA Kapazität Capacitance VR = 0 V, ƒ = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tP = 10 µs, RL = 50 Ω Semiconductor Group 3 1998-04-07 LS S269, LY S269, LG S269 Relative spektrale Emission Irel = ƒ (λ), TA = 25 ˚C, IF = 7.5 mA Relative spectral emission V (λ) = spektrale Augenempfindlichkeit Standard eye response curve OHL01698 100 % Ι rel 80 Vλ hyper-red red super-red orange blue 40 yellow pure-green green 60 20 0 400 450 500 550 600 650 nm 700 λ Abstrahlcharakteristik Irel = f (ϕ) Radiation characteristic 40 30 20 10 0 ϕ 50 OHL01693 1.0 0.8 0.6 60 0.4 70 0.2 80 0 90 100 1.0 0.8 Semiconductor Group 0.6 0.4 0 20 4 40 60 80 100 120 1998-04-07 LS S269, LY S269, LG S269 Durchlaßstrom IF = f (VF) Forward current TA = 25 ˚C Relative Lichtstärke IV/IV(2 mA) = f (IF) Relative luminous intensity TA = 25 ˚C OHL01208 10 2 OHL01207 10 1 Ι F mA ΙV Ι V(2mA) 10 0 10 1 5 super-red green 5 yellow 10 -1 green yellow super-red 5 10 0 10 -2 5 5 10 -1 1.0 1.4 1.8 2.2 2.6 10 -3 10 3.0 V 3.4 VF Zulässige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 ˚C t D= P T ΙF ΙF 5 5 10 1 mA 10 ΙF 2 OHL01193 mA T 6 D = 0.005 0.01 0.02 0.05 0.1 10 2 0 8 tP Ι F mA 5 10 Maximal zulässiger Durchlaßstrom Max. permissible forward current IF = f (TA) OHL01278 10 3 -1 5 0.2 4 0.5 10 1 3 DC 2 5 1 10 0 10 -5 10 -4 10 -3 Semiconductor Group 10 -2 10 -1 0 10 0 s 10 1 tp 5 0 20 40 60 80 ˚C 100 TA 1998-04-07 LS S269, LY S269, LG S269 Wellenlänge der Strahlung λpeak = f (TA) Wavelength at peak emission IF = 7.5 mA Dominantwellenlänge λdom = f (TA) Dominant wavelength IF = 7.5 mA OHL01672 690 OHL01673 690 λ dom λ peak nm nm 650 650 super-red 630 630 610 610 590 yellow 590 570 green 570 550 0 20 40 60 550 80 ˚C 100 TA Durchlaßspannung VF = f (TA) Forward voltage IF = 2 mA VF yellow green 0 20 40 60 80 ˚C 100 TA Relative Lichtstärke IV/IV(25 °C) = f (TA) Relative luminous intensity IF = 2 mA OHL01750 2.4 super-red OHL01675 2.0 ΙV V Ι V(25 ˚C) 1.6 2.2 2.0 1.2 yellow yellow green green 1.8 0.8 super-red super-red 1.6 1.4 0.4 0 20 40 Semiconductor Group 60 0.0 80 ˚C 100 TA 6 0 20 40 60 80 ˚C 100 TA 1998-04-07 LS S269, LY S269, LG S269 (Maße in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) 3.0 2.8 1.9 B 0.15 0.08 2.6 max 2 10˚ max A 1 1.4 1.2 C 0.95 10˚ max Maßzeichnung Package Outlines 3 0.1 max 0.2 M A 0.5 0.35 0.25 M B C 2˚...30˚ 1.1 max Approx. weight 0.01 g GSO06723 GSO06723 Pin configuration LS, LY, LG 1 2 Anode 3 Cathode Anschlußbelegung: (Draufsicht) Pin configuration: (top view) Semiconductor Group 7 1998-04-07