INFINEON IPA105N15N3G

IPA105N15N3 G
TM
"%&$!"# 3 Power-Transistor
Product Summary
Features
P ' 3 81>>5< >? A=1<<5E5<
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#) ' ' !
Package
E=%ID**(%<E
Marking
)(-C)-C
Maximum ratings, 1CT V S D><5BB? C85AF9B5 B@53 9
6954
Parameter
Symbol Conditions
? >C9>D? DB4A19> 3 DAA5>C
I9
T 8 S
*#
Value
+/
T 8 S
*/
Unit
6
) D<B54 4A19> 3 DAA5>C*#
I 9$\`X^Q
T 8 S
),0
E1<1>3 85 5>5A7H B9
>7<5 @D<B5
E 6H
I 9 R =H "
/,(
Y@
!1C5 B? DA3 5 E? <C175
V =H
p*(
J
) ? F5A49BB9@1C9? >
P _[_
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K
( @5A1C9>7 1>4 BC? A175 C5=@5A1CDA5
T V T ^_S
S
T 8 S
# 3 <9=1C93 3 1C57? AH #' # )#
*#
+ 5E
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Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
+&/
)-(
%
%
Thermal characteristics
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BC1>3 5 :D>3 C9
? > 3 1B5
R _T@8
A'K
Electrical characteristics, 1CT V S D><5BB? C85AF9B5 B@53 96954
Static characteristics
A19>B? DA3 5 2 A51;4? F> E? <C175
V "7G#9HH V =H . I 9 =
!1C5 C8A5B8? <4 E? <C175
V =H"_T#
V 9H4V =H I 9 U *
+
,
05A? 71C5 E? <C175 4A19> 3 DAA5>C
I 9HH
V 9H . V =H . T V S
%
(&)
)
V 9H . V =H . T V S
%
)(
)((
J
q6
!1C5B? DA3 5 <51;175 3 DAA5>C
I =HH
V =H . V 9H .
%
)
)((
Z6
A19>B? DA3 5 ? >BC1C5 A5B9BC1>3 5
R 9H"[Z#
V =H . I 9 %
1&)
)(&-
Y"
V =H . I 9 %
1&-
))&)
%
*&,
%
"
++
.-
%
H
!1C5 A5B9BC1>3 5
R=
I]MZ^O[ZP`O_MZOQ
g R^
+#
5E935 ? > == G == G == 5@? GH ) 3 ? >>53 C9? >
) 9BE5AC931<9> BC9<<19A
+ 5E
fV 9Hf5*fI 9fR 9H"[Z#YMc
I 9 *
+ F9C8 3 = ? >5 <1H5A U = C893; 3 ? @@5A1A51 6? A4A19>
@175 IPA105N15N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
+*+(
,+((
%
+/0
-(+
Dynamic characteristics
#>@DC3 1@13 9C1>3 5
C U^^
V =H . V 9H . f & " I
( DC@DC3 1@13 9
C1>3 5
C [^^
+ 5E5AB5 CA1>B65A3 1@13 9C1>3 5
C ]^^
%
/
%
-DA>? > 45<1H C9=5
t P"[Z#
%
)/
%
+ 9B5 C9
=5
t]
%
*(
%
-DA>? 6645<1H C9=5
t P"[RR#
%
+-
%
tR
%
1
%
!1C5 C? B? DA3 5 3 81A75
Q S^
%
)/
%
!1C5 C? 4A19> 3 81A75
Q SP
%
/
%
%
)+
%
1<<C9
=5
V 99 . V =H . I 9 R = "
\<
Z^
!1C5 81AS5 81A13 C5A9
BC93B,#
V 99 . I 9 V =H C? .
Z8
, F9C3 89
>7 3 81A75
Q ^b
!1C5 3 81A75 C? C1<
QS
%
,)
--
!1C5 @<1C51D E? <C175
V \XM_QM`
%
-&)
%
( DC@DC3 81A75
Q [^^
%
)(.
),)
Z8
%
%
+/
6
%
%
),0
%
(&1
)&*
J
%
))-
%
Z^
%
+0(
%
Z8
V 99 . V =H .
J
Reverse Diode
9? 45 3 ? >C9>? DB6? AF1A4 3 DAA5>C
IH
9? 45 @D<B5 3 DAA5>C
I H$\`X^Q
9? 45 6? AF1A4 E? <C175
V H9
+ 5E5AB5 A53 ? E5AH C9
=5
t ]]
+ 5E5AB5 A53 ? E5AH 3 81A75
Q ]]
,#
+ 5E
T 8 S
V =H . I < T V S
V G . I <4+/ Pi <'Pt U B
, 55 697DA5 6? A71C5 3 81A75 @1A1=5C5A4569>9C9? >
@175 IPA105N15N3 G
1 Power dissipation
2 Drain current
P _[_4R"T 8#
I 94R"T 8 V =H" .
45
40
40
35
30
25
I D [A]
P tot [W]
30
20
20
15
10
10
5
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94R"V 9H T 8 S D 4(
Z _T@84R"t \#
@1A1=5C5A t \
@1A1=5C5A D 4t \'T
103
101
<9=9C54 2 H ? >BC1C5
]Q^U^_MZOQ
UB
(&-
102
UB
10
100
Z thJC [K/W]
I D [A]
UB
=B
1
=B
(&*
(&)
(&(-
10-1
100
(&(*
(&()
B9>7<5 @D<B5
10-2
10-1
10
-1
10
0
10
1
10
2
10
3
10-4
10-3
10-2
10-1
100
101
t p [s]
V DS [V]
+ 5E
10-5
@175 IPA105N15N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94R"V 9H T V S
R 9H"[Z#4R"I 9 T V S
@1A1=5C5A V =H
@1A1=5C5A V =H
120
16
.
.
.
100
.
12
.
60
.
R DS(on) [W]
I D [A]
80
.
8
.
40
4
.
20
.
0
0
0
1
2
3
0
10
20
V DS [V]
30
40
50
60
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94R"V =H JV 9Hf5*fI 9fR 9H"[Z#YMc
g R^4R"I 9 T V S
@1A1=5C5A T V
80
100
90
70
80
60
70
60
g fs [S]
I D [A]
50
40
50
40
30
30
20
20
S
10
10
S
0
0
0
2
4
6
8
+ 5E
0
20
40
60
80
I D [A]
V GS [V]
@175 IPA105N15N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9 V =H .
V =H"_T#4R"T V V =H4V 9H
@1A1=5C5A I 9
30
4
3.5
25
U 3
U 2.5
V GS(th) [V]
R DS(on) [m ]
20
15
1.5
_d\
10
2
1
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 4R"V 9H V =H . f & " I
I <4R"V H9#
@1A1=5C5A T V
104
103
8U^^
103
8[^^
102
10
S I F [A]
C [pF]
S
2
S
S 101
101
8]^^
100
0
20
40
60
80
100
V DS [V]
+ 5E
0
0.5
1
1.5
2
V SD [V]
@175 IPA105N15N3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6H4R"t 6J R =H "
V =H4R"Q SM_Q I 9 @D<B54
@1A1=5C5A T V"^_M]_#
@1A1=5C5A V 99
100
10
.
8
.
S
.
6
V GS [V]
I AS [A]
S
10
S
4
2
1
0
1
10
100
1000
0
10
20
30
40
50
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 7G"9HH#4R"T V I 9 =
170
V =H
165
Qg
160
V BR(DSS) [V]
155
150
V S ^"_T#
145
140
Q S "_T#
135
Q ^b
Q S^
130
-60
-20
20
60
100
140
Q g ate
Q SP
180
T j [°C]
+ 5E
@175 IPA105N15N3 G
PG-TO220-FP
+ 5E
@175 IPA105N15N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
+ 5E
@175