BCR42PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor (R1=22k, R2 =47k) 2 1 VPS05604 Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 B2 E2 6 5 4 R2 R1 W1s 123 TR2 TR1 Position in tape: pin 1 opposite of feed hole side Direction of Unreeling 3 EHA07193 R1 R2 1 2 3 E1 B1 C2 EHA07176 Type Marking BCR42PN W9s Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 30 DC collector current IC 100 mA Total power dissipation, TS = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 140 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-13-2001 BCR42PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 227 µA hFE 70 - - - - 0.3 Vi(off) 0.5 - 1.2 Vi(on) 0.8 - 2.5 Input resistor R1 15 22 29 Resistor ratio R1 /R2 0.42 0.47 0.52 fT - 150 - MHz Ccb - 3 - pF DC Characteristics Collector-emitter breakdown voltage V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) - IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat V IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V k - AC Characteristics Transition frequency I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% 2 Dec-13-2001 BCR42PN NPN Type DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 2 10 3 - 10 2 IC hFE mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 10 0 0 2 0.2 0.4 V 0.6 IC 1 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 1 10 2 mA mA 10 0 IC IC 10 1 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 10 -3 0 2 Vi(on) 0.5 1 1.5 V 2.5 Vi(off) 3 Dec-13-2001 BCR42PN PNP Type DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 2 10 3 - 10 2 IC hFE mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 10 0 0 2 0.2 0.4 V 0.6 IC 1 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage V i(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 1 10 2 mA mA 10 0 IC IC 10 1 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 10 -3 0 2 Vi(on) 0.5 1 1.5 V 2.5 Vi(off) 4 Dec-13-2001 BCR42PN Total power dissipation Ptot = f (TS ) 300 P tot mW 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Dec-13-2001