BSC130P03LS G OptiMOS™-P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS(on),max 13 mΩ ID -22.5 A • Logic level • 150°C operating temperature • Avalanche rated; RoHS compliant PG-TDSON-8 • Vgs=25V, specially suited for notebook applications • Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Packing BSC130P03LS G PG-TDSON-8 130P03LS Yes Dry Maximum ratings, at T j=25 °C, unless otherwise specified Value Unit T C=25 °C -22.5 A T C=70 °C -22.5 T A=25 °C1) -12 Parameter Symbol Conditions Continuous drain current ID Pulsed drain current I D,pulse T C=25 °C2) -90 Avalanche energy, single pulse E AS I D=-22.5 A, R GS=25 Ω 148 mJ Gate source voltage V GS ±25 V Power dissipation P tot T C=25 °C 69 W T A=25 °C1) 2.5 Operating and storage temperature ESD class T j, T stg -55 ... 150 JESD22-A114-HBM 1C (1kV-2kV) 260 °C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev. 1.04 °C page 1 2010-05-04 BSC130P03LS G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.8 - - 50 -30 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA 6 cm2 cooling area1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250µA Gate threshold voltage V GS(th) V DS=V GS, I D=-150 µA -2.2 -1.5 -1 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-30 V, V GS=0 V, T j=125 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-25 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-22.5 A - 9.4 13.0 mΩ Gate resistance RG - 3.8 - Ω Transconductance g fs 20 39 - S |V DS|>2|I D|R DS(on)max, I D=-22.5 A 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Figure 3. Rev. 1.04 page 2 2010-05-04 BSC130P03LS G Parameter Values Symbol Conditions Unit min. typ. max. - 2760 3670 - 857 1140 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 690 1000 Turn-on delay time t d(on) - 11.4 17.1 Rise time tr - 65.6 98.4 Turn-off delay time t d(off) - 43.5 65.3 Fall time tf - 35.1 52.7 Gate to source charge Q gs - -7.7 -10.3 Gate charge at threshold Q g(th) - -4.3 -5.7 Gate to drain charge Q gd - -20.5 -30.8 Switching charge Q sw - -24.0 -35.4 Gate charge total Qg - -54.9 -73.1 Gate plateau voltage V plateau - -2.9 - Output charge Q oss - -14.8 - - - 22.5 - - -90 V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15 V, V GS=10 V, I D=22.5 A, R G=6 Ω pF ns Gate Charge Characteristics 3) V DD=-24 V, I D=22.5 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=-22.5 A, T j=25 °C - -0.9 -1.2 V Reverse recovery time t rr V R=15 V, I F=|I S|, di F/dt =100 A/µs - 33 - ns Reverse recovery charge Q rr - 24 - nC Rev. 1.04 T C=25 °C page 3 A 2010-05-04 BSC130P03LS G 1 Power dissipation 2 Drain current P tot=f(T C); t p≤10 s I D=f(T C); |V GS|≥10 V; t p≤10 s 80 24 70 20 60 16 -I D [A] P tot [W] 50 40 12 30 8 20 4 10 0 0 0 40 80 120 160 0 40 80 TC [°C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 102 160 T C[°C] 100 10 µs 101 10 100 1 1 ms 10 1 0.01 Z thJS [K/W] -I D [A] 100 µs 10 limited by on-state resistance 10 ms 0.2 0.1 0.05 10 -1 0.1 DC 0.02 single pulse 100 1 0.1 1 10 100 -V DS [V] Rev. 1.04 page 4 10-2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10-5 10-4 10-3 10-2 10-1 100 t p [s] 10 101 2010-05-04 BSC130P03LS G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 60 50 -10 V -2.5 V -4.5 V 50 40 -2.7 V -3.5 V -3 V -3.2 V R DS(on) [mΩ] -I D [A] 40 -3.2 V 30 -3 V 30 -3.5 V 20 20 -4.5 V -2.7 V 10 10 -10 V -2.5 V -2.3 V 0 0 0 1 2 3 0 10 20 -V DS [V] 30 40 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 60 50 25 °C 50 40 40 150 °C g fs [S] -I D [A] 30 30 20 20 10 10 0 0 0 1 2 3 4 0 Rev. 1.04 10 20 30 -I D [A] -V GS [V] page 5 2010-05-04 BSC130P03LS G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-22.5 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-150 µA 16 3 14 2.5 max. 98 % 2 10 -V GS(th) [V] R DS(on) [mΩ] 12 typ. 8 1 6 0.5 4 typ. 1.5 min. 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 100 10000 150 °C, typ 103 Coss 1000 150 °C, 98% 10 I F [A] C [pF] Ciss 25 °C, typ Crss 1 25 °C, 98% 102 0.1 100 0 8 16 24 0 Rev. 1.04 0.5 1 1.5 -V SD [V] -V DS [V] page 6 2010-05-04 BSC130P03LS G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-22.5 A pulsed parameter: T j(start) parameter: V DD 100 10 9 8 -6 V 7 -15 V -24 V 25 °C -V GS [V] -I AV [A] 6 100 °C 10 125 °C 5 4 3 2 1 1 0 1 10 100 1000 0 20 40 60 -Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 35 V GS 34 Qg 33 -V BR(DSS) [V] 32 31 30 V g s(th) 29 28 Q g(th) 27 Q sw Q gs 26 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.04 page 7 2010-05-04 BSC130P03LS G Package Outline PG-TDSON-8: Outline Rev. 1.04 page 8 2010-05-04 BSC130P03LS G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.04 page 9 2010-05-04