SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M (PNP) 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 06M s1G Q62702-A3473 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 80 Collector-base voltage VCBO 80 Emitter-base voltage VEBO 4 DC collector current IC Peak collector current I CM Base current IB 100 Peak base current I BM 200 Total power dissipation, T S ≤ 95 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature T stg - 65...+150 Junction ambient 1) RthJA ≤110 Junction - soldering point RthJS ≤55 500 1 Unit V mA A mA Thermal Resistance K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-08-1998 1998-11-01 SMBTA 06M Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 80 - - Collector-base breakdown voltage V(BR)CBO 80 - - I C = 100 µA, IB = 0 Emitter-base breakdown voltage V(BR)EBO 4 - - V I E = 10 µA, I C = 0 Collector cutoff current I CBO - - 100 nA I CBO - - 20 µA I CEO - - 100 nA DC Characteristics Collector-emitter breakdown voltage V I C = 1 mA, I B = 0 VCB = 80 V, I E = 0 Collector cutoff current VCB = 80 V, I E = 0 , TA = 150 °C Collector cutoff current VCE = 60 V, I B = 0 hFE DC current gain 1) - I C = 10 mA, VCE = 1 V 100 - - I C = 100 mA, V CE = 1 V 100 - - VCEsat - - 0.25 V VBE(ON) - - 1.2 V fT - 100 - MHz Ccb - 5 - pF Collector-emitter saturation voltage1) I C = 100 mA, IB = 10 mA Base-emitter voltage 1) I C = 100 mA, V CE = 1 V AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Jun-08-1998 1998-11-01 SMBTA 06M Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy 1200 mW P tot TS 800 TA 600 400 200 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f (tp) Ptotmax / PtotDC = f (tp) 10 2 10 3 Ptotmax / PtotDC RthJS K/W 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group - 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Jun-08-1998 1998-11-01 SMBTA 06M DC current gain h FE = f(I C) Collector-emitter saturation voltage VCE = 1V IC = f (VCEsat), h FE = 10 EHP00821 10 3 EHP00819 10 3 Ι C mA h FE 100 C 25 C -50 C 100 C 25 C 10 2 10 2 5 -50 C 10 1 10 1 5 10 0 -1 10 10 0 10 1 10 2 mA 10 10 0 3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ΙC 0.8 V CEsat Collector cutoff current I CBO = f(TA) Collector current I C = f (VBE) VCB = V CEmax VCE = 1V EHP00820 10 4 nA V EHP00815 10 3 mA Ι CBO ΙC max 10 3 5 100 C 25 C -50 C 10 2 5 10 2 5 10 1 typ 10 1 5 5 10 0 10 5 0 5 10 -1 10 -1 0 50 0 C 150 100 V 1.0 1.5 V BE TA Semiconductor Group Semiconductor Group 0.5 44 Jun-08-1998 1998-11-01