PNP Silicon Switching Transistor SMBT 4126 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 4126 sC3 Q68000-A8549 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 25 V Collector-base voltage VCB0 25 Emitter-base voltage VEB0 4 Collector current IC 200 mA Total power dissipation, TS = 71 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 310 Junction - soldering point Rth JS ≤ 240 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBT 4126 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA V(BR)CE0 25 – – Collector-base breakdown voltage IC = 10 µA V(BR)CB0 25 – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 4 – – Collector-base cutoff current VCB = 20 V, IE = 0 ICB0 – – 50 Emitter-base cutoff current VEB = 3 V, IC = 0 IEB0 – – 50 DC current gain IC = 2 mA, VCE = 1 V IC = 50 mA, VCE = 1 V hFE Collector-emitter saturation voltage1) IC = 50 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 50 mA, IB = 5 mA V nA – 120 60 – – 360 – VCEsat – – 0.4 VBEsat – – 0.95 Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz fT 250 – – MHz Output capacitance VCB = 5 V, f = 1 MHz Cobo – – 4.5 pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – – 10 Small-signal current gain IC = 1 mA, VCE = 5 V, f = 1 kHz hfe 120 – 480 – Noise figure IC = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz RS = 1 kΩ NF – – 4 dB V AC characteristics 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 SMBT 4126 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Saturation voltage IC = f (VBE sat, VCE sat) Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 1 V, normalized Semiconductor Group 3 SMBT 4126 Small-signal current gain hfe = f (IC) VCE = 10 V, f = 1 MHz Semiconductor Group 4