INFINEON SIGC42T120CS

SIGC42T120CS
IGBT Chip in NPT-technology
FEATURES:
• 1200V NPT technology
• 180µm chip
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
Chip Type
SIGC42T120CS
VCE
This chip is used for:
• SGW25N120
C
Applications:
• drives, SMPS, resonant
applications
ICn
1200V
25A
Die Size
Package
6.59 x 6.49 mm2
sawn on foil
G
E
Ordering Code
Q67050A4048-A001
MECHANICAL PARAMETER:
Raster size
Emitter pad size
6.59 x 6.49
mm
2
2 x (2.18 x 1.58)
Gate pad size
1.06 x 0.65
Area total / active
42.8 / 33.5
Thickness
180
µm
Wafer size
150
mm
Flat position
180
grd
Max.possible chips per wafer
334 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7151-S, Edition 2, 03.09.2003
SIGC42T120CS
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
1200
V
Collector-emitter voltage, Tj=25 °C
V CE
DC collector current, limited by Tjmax
IC
1)
A
Pulsed collector current, tp limited by Tjmax
Icpuls
75
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Ts t g
-55 ... +150
°C
1)
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specifi ed:
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V , IC= 1.5mA
1200
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC =25A
2.5
3.0
3.6
Gate-emitter threshold voltage
VGE(th)
IC =1mA , VGE=VCE
3.0
4.0
5.0
Zero gate voltage collector current
ICES
VCE=1200V , VGE=0V
3
µA
Gate-emitter leakage current
IGES
VCE=0V , VGE=20V
120
nA
V
ELECTRICAL CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Input capacitance
Ci s s
V C E= 2 5 V ,
-
2150
2600
Output capacitance
Co s s
V GE= 0 V ,
-
160
190
Reverse transfer capacitance
Cr s s
f =1MHz
-
110
130
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load
Parameter
Symbol
Conditions 1)
Value
min.
typ.
max.
Turn-on delay time
t d(on)
T j = 15 0 ° C
-
50
60
Rise time
tr
V C C = 80 0 V ,
-
36
43
Turn-off delay time
td(off)
V GE= - 1 5 / 1 5 V ,
-
820
990
Fall time
tf
R G = 2 2Ω
-
42
50
IC=25A,
1)
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7151-S, Edition 2, 03.09.2003
Unit
ns
SIGC42T120CS
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7151-S, Edition 2, 03.09.2003
SIGC42T120CS
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
SGW25N120
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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Edited by INFINEON Technologies AI PS DD HV3, L 7151-S, Edition 2, 03.09.2003