INFINEON SIGC16T120C

SIGC16T120C
IGBT Chip in NPT-technology
C
FEATURES:
• 1200V NPT technology
• 200µm chip
• short circuit prove
• positive temperature coefficient
• easy paralleling
Chip Type
VCE
SIGC16T120C
1200V
This chip is used for:
• BUP 311D /BUP 212
G
Applications:
• drives
ICn
8A
Die Size
Package
4.04 x 4 mm2
sawn on foil
E
Ordering Code
Q67041-A4673A003
MECHANICAL PARAMETER:
Raster size
4.04 x 4
Area total / active
16.16 / 10.4
Emitter pad size
1.88x2.18
Gate pad size
0.71x1.08
mm
2
Thickness
200
µm
Wafer size
150
mm
Flat position
0
deg
Max.possible chips per wafer
898 pcs
Passivation frontside
Photoimide
Emitter metalization
3200 nm Al Si 1%
Collector metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 7131-M, Edition 2, 03.09.2003
SIGC16T120C
MAXIMUM RATINGS:
Parameter
Symbol
Value
Unit
1200
V
Collector-emitter voltage, Tj=25 °C
V CE
DC collector current, limited by Tjmax
IC
1)
A
Pulsed collector current, tp limited by Tjmax
Icpuls
24
A
Gate emitter voltage
V GE
±20
V
Operating junction and storage temperature
Tj, Ts t g
-55 ... +150
°C
1)
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:
Parameter
Symbol
Value
Conditions
min.
Unit
typ.
max.
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V , IC=500µA
1200
Collector-emitter saturation voltage
VCE(sat)
VGE=15V, IC =8A
2
2.5
3
Gate-emitter threshold voltage
VGE(th)
IC =350µA , VGE=VCE
4.5
5.5
6.5
Zero gate voltage collector current
ICES
VCE=1200V , VGE=0V
1
µA
Gate-emitter leakage current
IGES
VCE=0V , VGE=20V
120
nA
V
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Input capacitance
Ci s s
V C E =25V ,
-
600
800
Output capacitance
Co s s
V GE= 0 V ,
-
60
90
Reverse transfer capacitance
Cr s s
f =1MHz
-
38
55
Unit
pF
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Symbol
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Conditions 1)
Value
typ.
max.
-
55
110
I C =8A
-
50
100
V GE= ± 1 5 V ,
-
380
570
-
80
120
Tj= 1 2 5 ° C
min.
V C C =600V,
1)
RG = 1 5 0 Ω
values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7131-M, Edition 2, 03.09.2003
Unit
ns
SIGC16T120C
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7131-M, Edition 2, 03.09.2003
SIGC16T120C
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
BUP 311D /BUP 212
Package : TO220
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
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Edited by INFINEON Technologies AI PS DD HV3, L 7131-M, Edition 2, 03.09.2003