BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 06 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 BFY193 (ql) (ql) Quality Level: - see below C 2 E 3 Package 4 B E Micro-X1 P: Professional Quality, Ordering Code: Q62702F1610 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q62702F1701 (see order instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY193 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage, VBE=0 VCES 20 V Collector-base voltage VCBO 20 V Emitter-base voltage VEBO 2 V Collector current IC 80 mA Base current IB 10 Total power dissipation, 2), 3) TS ≤ 104°C Ptot 580 mW Junction temperature Tj 200 °C Operating temperature range Top -65...+200 °C Storage temperature range Tstg -65...+200 °C Rth JS < 165 K/W 1) mA Thermal Resistance Junction-soldering point 3) Notes.: 1) The maximum permissible base current for VFBE measurements is 30mA (spotmeasurement duration < 1s) 2) At TS = + 104 °C. For TS > + 104 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. ICBO - - 100 µA ICEX - - 600 µA ICBO - - 50 nA IEBO - - 25 µA IEBO - - 0.5 µA DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0,5µA 1.) Collector-base cutoff current VCB = 10 V, IE = 0 Emitter base cuttoff current VEB = 2 V, IC = 0 Emitter base cuttoff current VEB = 1 V, IC = 0 Notes: 1.) This Test assures V(BR)CE0 > 12V Semiconductor Group 2 of 5 Draft B, September 99 BFY193 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. VFBE - - 1 V hFE 50 100 175 - DC Characteristics Base-Emitter forward voltage IE = 30 mA, IC = 0 DC current gain IC = 30 mA, VCE = 8 V AC Characteristics Transition frequency GHz fT IC = 40mA, VCE = 5 V, f = 500 MHz 6,5 7.5 - IC = 50 mA, VCE = 8 V, f = 500 MHz - 8 - CCB - 0.56 0.75 pF CCE - 0.34 - pF CEB - 1.9 2.4 pF F - 2.3 2.9 dB 12.5 13.5 - dB |S21e| 8 9 - dB POUT 16.5 17.5 - dBm Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz Noise Figure IC = 15 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt Power gain 1.) Gma IC = 40 mA, VCE = 5V, f = 2 GHz ZS = ZSopt , ZL= ZLopt 2 Transducer gain IC = 40 mA, VCE = 5 V, f = 2 GHz ZS = ZL = 50 Ω Output Power IC = 50 mA, VCE = 5 V, f = 2GHz, PIN=10dBm, ZS = ZL = 50 Ω Notes.: 1.) Gma = S 21 ( k − k 2 − 1) , S12 Semiconductor Group Gms = S 21 S12 3 of 5 Draft B, September 99 BFY193 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: Ordering Code: Q.......... BFY193 (ql) (ql): Quality Level Ordering Example: Ordering Code: Q62702F1701 BFY193 ES For BFY193 in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/product/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/product/discrete/hirel.htm Please contact also our marketing division : Tel.: Fax.: Address: Semiconductor Group ++89 234 24480 ++89 234 28438 e-mail: [email protected] Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 4 of 5 Draft B, September 99 BFY193 Micro-X1 Package Infineon Technologies AG 1998. All Rights Reserved. 4 3 1 2 Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 5 of 5 Draft B, September 99