IPD70P04P4-09 OptiMOS®-P2 Power-Transistor Product Summary V DS -40 V R DS(on) 8.9 mΩ ID -73 A Features PG-TO252-3-313 • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70P04P4-09 PG-TO252-3-313 4P0409 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=-10V T C=100°C, V GS=-10V1) Value -73 Unit A -52 Pulsed drain current1) I D,pulse T C=25°C -292 Avalanche energy, single pulse1) E AS I D=-36A 24 mJ Avalanche current, single pulse I AS - -73 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 75 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2010-05-26 IPD70P04P4-09 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 2 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= -1mA -40 - - Gate threshold voltage -V GS(th) V DS=V GS, I D=-120µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS - -0.04 -1 - -20 -200 V DS=-32V, V GS=0V, T j=25°C V DS=-32V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-10V, I D=-70A - 6.4 8.9 mΩ Rev. 1.0 page 2 2010-05-26 IPD70P04P4-09 Parameter Symbol Values Conditions Unit min. typ. max. - 3700 4810 - 1400 1820 Dynamic characteristics1) Input capacitance C iss V GS=0V, V DS=-25V, f =1MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 40 80 Turn-on delay time t d(on) - 19 - Rise time tr - 12 - Turn-off delay time t d(off) - 24 - Fall time tf - 31 - Gate to source charge Q gs - 20 26 Gate to drain charge Q gd - 10 20 Gate charge total Qg - 54 70 Gate plateau voltage V plateau - -5.4 - V - - -73 A - - -292 - -1 -1.3 V - 50 - ns - 50 - nC V DD=-20V, V GS=-10V, I D=-73A, R G=3.5Ω ns Gate Charge Characteristics 1) V DD=-32V, I D=-70A, V GS=0 to -10V nC Reverse Diode Diode continous forward current 1) IS Diode pulse current 1) I S,pulse Diode forward voltage V SD Reverse recovery time 1) t rr Reverse recovery charge 1) Q rr 1) T C=25°C V GS=0V, I F=-70A, T j=25°C V R=-20V, I F=-50A, di F/dt =-100A/µs Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2010-05-26 IPD70P04P4-09 2 Drain current P tot = f(T C); V GS ≤ -6V I D = f(T C); V GS = -10V 80 80 60 60 -I D [A] P tot [W] 1 Power dissipation 40 20 40 20 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0, SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 100 10 µs 100 0.5 Z thJC [K/W] 100 µs -I D [A] 1 ms 0.1 10-1 0.05 0.01 10 10-2 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] -V DS [V] Rev. 1.0 single pulse page 4 2010-05-26 IPD70P04P4-09 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: -V GS parameter: V GS 25 280 10V 5V 8V 20 7V R DS(on) [mΩ] -I D [A] 210 7V 6V 140 15 6V 8V 10 70 10V 5V 5 0 0 1 2 3 4 5 0 6 70 140 -V DS [V] 210 280 -I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = -6V R DS(on) = f(T j); I D = -70 A; V GS = -10 V parameter: T j 280 11 10 210 R DS(on) [mΩ] -I D [A] 9 140 8 7 6 70 175 °C 5 25 °C -55 °C 4 0 2 3 4 5 6 7 8 Rev. 1.0 -60 -20 20 60 100 140 180 T j [°C] -V GS [V] page 5 2010-05-26 IPD70P04P4-09 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: -I D 105 4 3.5 104 Ciss 1200µA 120µA C [pF] -V GS(th) [V] 3 2.5 103 Coss 2 102 1.5 Crss 10 1 -60 -20 20 60 100 140 1 0 180 5 10 T j [°C] 15 20 25 30 140 180 -V DS [V] 11 Typical forward diode characteristicis 12 Drain-source breakdown voltage I F = f(VSD) V BR(DSS) = f(T j); I D = -1 mA parameter: T j 45 103 44 43 42 -I F [A] -V BR(DSS) [V] 102 25 °C 175 °C 10 41 40 39 1 38 37 36 100 35 0 0.4 0.8 1.2 1.6 -V SD [V] Rev. 1.0 -60 -20 20 60 100 T j [°C] page 6 2010-05-26 IPD70P04P4-09 13 Typ. gate charge 14 Gate charge waveforms V GS = f(Q gate); I D = -73 A pulsed parameter: V DD 12 V GS -8V 10 Qg -32V -V GS [V] 8 6 4 Q gate 2 Q gs Q gd 0 0 10 20 30 40 50 60 Q gate [nC] Rev. 1.0 page 7 2010-05-26 IPD70P04P4-09 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2010 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2010-05-26 IPD70P04P4-09 Revision History Date Version Changes 1.0 Rev. 1.0 21.05.2010 Final Data Sheet page 9 2010-05-26