INFINEON STM81004G

STM 81004X
STM 81005X
1550 nm Laser in Coaxial Package with SM-Pigtail,
Medium Power
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Designed for application in fiber-optic networks
Laser diode with Multi-Quantum Well structure
Suitable for bit rates up to 1 Gbit/s
Ternary photodiode at rear mirror for monitoring and
control of radiant power
• Hermetically sealed subcomponent, similar to TO 18
• SM Pigtail with optional flange
Type
Ordering Code
Connector/Flange
STM 81004G
Q62702-Pxxxx
FC / without flange
STM 81004A
Q62702-Pxxxx
DIN / without flange
STM 81005G
Q62702-Pxxxx
FC / with flange
STM 81005A
Q62702-Pxxxx
DIN / with flange
Component with other connector types on request.
Maximum Ratings
Output power ratings refer to the SM fiber output. The operating temperature of the
submount is identical to the case temperature.
Parameter
Symbol
Values
Unit
Module
Operating temperature range at case
TC
− 40 … + 85
°C
Storage temperature range
Tstg
− 40 … + 85
°C
Soldering temperature
tmax = 10 s, 2 mm distance from bottom edge of
case
TS
260
°C
Semiconductor Group
1
02.95
STM 81004X
STM 81005X
Maximum Ratings (cont’d)
Parameter
Symbol
Values
Unit
120
mA
Laser Diode
Direct forward current
IF max
Radiant power CW
Φe
2
mW
Reverse voltage
VR max
2
V
VR max
10
V
Monitor Diode
Reverse voltage
Characteristics
All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C.
Parameter
Symbol
Values
Unit
> 1.2
mW
1510 … 1590
nm
Laser Diode
Optical output power
Φe
Emission wavelength center of range
Φe = 0.5 mW
λ
Spectral bandwidth Φe = 0.5 mW (RMS)
∆λ
<5
nm
Threshold current (− 40 … + 85 °C)
Ith
8 … 60
mA
Forward voltage Φe = 0.5 mW
VF
< 1.5
V
Radiant power at threshold
Φeth
< 40
µW
Slope efficiency
η
20 … 100
Differential series resistance
rS
<8
Ω
Rise time/fall time
tR, tF
<1
ns
mW/A
Monitor Diode
Dark Current, VR = 5 V, Φe = 0
IR
< 500
nA
Photocurrent, Φe = 0.5 mW
IP
100 … 1000
µA
Semiconductor Group
2
STM 81004X
STM 81005X
Laser Diode
Radiant Power in Singlemode Fiber
Relative Radiant Power
Φe = f(λ)
100
90
1
Relative Optical Power
Optical Power in MikroW
1.2
0.8
0.6
0.4
0.2
80
70
60
50
40
30
20
10
0
0
20
40
0
1546 1548 1550 1552 1554
60
Forward Current in mA
Wavelength in nm
Monitor Diode Dark Current IR = f(TA)
Φport = 0, VR = 5 V
Laser Forward Current
IF = f(VF)
1000
100
100
80
Dark Current in nA
Forward Current in mA
90
70
60
50
40
30
10
1
0.1
20
10
0.01
0
0
0.4
0.8
1.2
-50
1.6
50
Temperature in °C
Forward Voltage in V
Semiconductor Group
0
3
100
STM 81004X
STM 81005X
Package Outlines (Dimensions in mm)
STM 81004X
STM 81005X
Semiconductor Group
4