BGA735N16 High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz) Data Sheet Revision 3.8, 2010-12-23 RF & Protection Devices Edition 2010-12-23 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA735N16 High Linearity Tri-Band LTE/UMTS LNA BGA735N16 High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz) Revision History: 2010-12-23, Revision 3.8 Previous Revision: 2010-09-06, Revision 3.7 Page Subjects (major changes since last revision) 13-14 Added LTE bands 12, 13, 14, 17 21-22 Added LTE bands 38, 40 Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Data Sheet 3 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Band Select / Gain Control Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Supply Current Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Logic Signal Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Measured RF Characteristics UMTS Bands 12 / 17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Measured RF Characteristics UMTS Bands 13 / 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Measured RF Characteristics UMTS Band 20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Measured RF Characteristics UMTS Bands 5 / 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Measured RF Characteristics UMTS Band 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Measured RF Characteristics UMTS Bands 3 / 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Measured RF Characteristics UMTS Band 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Measured RF Characteristics UMTS Bands 1 / 4 / 10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Measured RF Characteristics UMTS Band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Measured RF Characteristics UMTS Band 38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Measured RF Characteristics UMTS Band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3 3.1 3.2 3.3 3.4 3.5 3.6 Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Bands 1, 2, 4, 5, 6 and 10 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Bands 3, 7, 8, 9 and 38 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Bands 2, 12, 13, 14, 17 and 40 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . UMTS Bands 1, 2, 4, 10 and 20 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4.1 4.2 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Data Sheet 4 24 24 25 26 27 28 29 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Data Sheet Block Diagram of Tri-Band LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Application Board Layout on 3-layer FR4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Cross-Section View of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Detail of Application Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Recommended Footprint and Stencil Layout for the TSNP-16-1 Package . . . . . . . . . . . . . . . . . . 31 Package Outline (Top, Side and Bottom View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 5 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Table 16 Table 17 Table 18 Table 19 Table 20 Table 21 Table 22 Table 23 Data Sheet Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics, TA =-30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Band Select Truth Table, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Gain Control Truth Table, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Typical Switching Times; TA = -30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 13 Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 14 Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 15 Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 16 Typical Characteristics 900 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 17 Typical Characteristics 1800 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 18 Typical Characteristics 1900 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 19 Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 20 Typical Characteristics 2300 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 21 Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 22 Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 23 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 6 Revision 3.8, 2010-12-23 High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz) 1 BGA735N16 Features Main features: • • • • • • • • • • Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands) Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode (800 MHz / 1900 MHz / 2100 MHz) Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all bands) Standby mode (< 2 µA typ.) Output internally matched to 50 Ω Inputs pre-matched to 50 Ω 2kV HBM ESD protection Low external component count Small leadless TSNP-16-1 package (2.3 x 2.3 x 0.39 mm) Pb-free (RoHS compliant) package Description The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA735N16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different LTE/UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input and output matching network. Note: LTE/UMTS bands 1/ 2/ 5 is the standard band combination for this product requiring no external output matching network. Product Name Package Chip Marking BGA735N16 TSNP-16-1 T1530 BGA735 Data Sheet 7 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Features QF 5)*1'+ 9&& 9*6 QF 5)2870 5),10 5)287+ 5),1+ 5)287/ 5)*1'0 %LDVLQJ/RJLF &LUFXLWU\ QF 5),1/ 9(1 9(1 55() %*$1B&KLSB%O'YVG Figure 1 Data Sheet Block Diagram of Tri-Band LNA 8 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2 Electrical Characteristics 2.1 Absolute Maximum Ratings Table 1 Absolute Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC -0.3 – 3.6 V – Supply current ICC – – 10 mA – Pin voltage VPIN -0.3 – VCC+0.3 V All pins except RF input pins. Pin voltage RF Input Pins VRFIN -0.3 – 0.9 V – RF input power PRFIN – – 4 dBm – Junction temperature Tj – – 150 °C – Ambient temperature range TA -30 – 85 °C – Storage temperature range Tstg -65 – 150 °C – Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 Thermal Resistance Table 2 Thermal Resistance Parameter Symbol Thermal resistance junction to soldering point 2.3 ESD Integrity Table 3 ESD Integrity Parameter ESD hardness HBM1) RthJS Values Min. Typ. Max. – – ≤ 37 Symbol VESD-HBM Values Min. Typ. Max. – 2000 – Unit Note / Test Condition K/W – Unit Note / Test Condition V All pins 1) According to JESD22-A114 Data Sheet 9 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.4 DC Characteristics Table 4 DC Characteristics, TA =-30 ... 85 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 2.6 2.8 3.0 V – Supply current high gain mode ICCHG – 4.0 3.4 – mA High band Mid and low band Supply current low gain mode ICCLG – 650 – µA All bands Supply current standby mode ICCOFF – 0.1 2.0 µA – Logic level high VHI 1.5 2.8 – V VEN1, VEN2 and VGS Logic level low VLO – 0.0 0.5 V Logic currents VEN IENL – 0.1 – µA IENH – 10.0 – µA IGSL – 0.1 – µA IGSH – 5.0 – µA Logic currents VGS 2.5 Band Select / Gain Control Truth Table Table 5 Band Select Truth Table, VCC = 2.8 V VEN1 and VEN2 VGS High band Mid band Low band Power Down VEN1 H H L L VEN2 H L H L Table 6 VGS Data Sheet Gain Control Truth Table, VCC = 2.8 V High Gain Low Gain H L 10 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics Supply Current Characteristics; TA = 25 °C 2.6 Supply current high gain mode versus resistance of reference resistor RREF (see Figure 2 on Page 24; low gain mode supply current is independent of reference resistor). Supply Current Midband ICC = f (RREF) VCC = 2.8 V Supply Current Highband ICC = f (RREF) 9 9 8 8 7 7 Icc [mA] Icc [mA] VCC = 2.8 V 6 5 6 5 4 4 3 3 2 2 1 10 100 1 10 100 RREF [kΩ] RREF [kΩ] Supply Current Lowband ICC = f (RREF) VCC = 2.8 V 9 8 Icc [mA] 7 6 5 4 3 2 1 10 100 RREF [kΩ] Data Sheet 11 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics Logic Signal Characteristics; TA = 25 °C 2.7 Current consumption of logic inputs VEN1, VEN2, VGS Logic currents IGS = f(VGS) VCC = 2.8 V Logic currents IEN1,2 = f(VEN1,2) VCC = 2.8 V 6 12 10 4 IGS [µA] IEN1,2 [µA] 8 6 2 4 2 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 2.8 Switching Times Table 7 Typical Switching Times; TA = -30 ... 85 °C Parameter 1 1.5 2 2.5 3 VGS [V] VEN1,2 [V] Symbol Values Min. Typ. Max. Unit Note / Test Condition Gainstep settling time tGS – 1 – µs Switching LG ↔ HG all bands Bandselect settling time tBS – 1 – µs Switching from any band to a different band (pins VEN1,2) Data Sheet 12 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.9 Measured RF Characteristics UMTS Bands 12 / 17 Table 8 Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition Min. Typ. Max. Pass band range band 12 728 – 746 MHz – Pass band range band 17 734 – 746 MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 3.4 – mA High gain mode – 0.65 – mA Low gain mode – 15.2 – dB High gain mode – -9.2 – dB Low gain mode – -39 – dB High gain mode – -9.2 – dB Low gain mode – 1.1 – dB High gain mode – 9.2 – dB Low gain mode – -15 – dB 50 Ω, high gain mode S11LG – -16 – dB 50 Ω, low gain mode S22HG – -19 – dB 50 Ω, high gain mode S22LG – -12 – dB 50 Ω, low gain mode Stability factor k – >2.3 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -6 – dBm High gain mode – -10 – dBm Low gain mode – -11 -1 – dBm High gain mode Low gain mode Current consumption Gain Reverse Isolation 2) Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 4 on Page 26 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 13 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.10 Measured RF Characteristics UMTS Bands 13 / 14 Table 9 Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition Min. Typ. Max. Pass band range band 13 746 – 756 MHz – Pass band range band 14 758 – 768 MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 3.4 – mA High gain mode – 0.65 – mA Low gain mode – 15.3 – dB High gain mode – -8.9 – dB Low gain mode – -39 – dB High gain mode – -8.9 – dB Low gain mode – 1.1 – dB High gain mode – 8.9 – dB Low gain mode – -15 – dB 50 Ω, high gain mode S11LG – -13 – dB 50 Ω, low gain mode S22HG – -20 – dB 50 Ω, high gain mode S22LG – -14 – dB 50 Ω, low gain mode Stability factor k – >2.3 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -6 – dBm High gain mode – -10 – dBm Low gain mode – -11 -1 – dBm High gain mode Low gain mode Current consumption Gain Reverse Isolation 2) Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 4 on Page 26 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 14 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.11 Measured RF Characteristics UMTS Band 20 Table 10 Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition – Min. Typ. Max. 791 – 821 MHz ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 3.4 – mA High gain mode – 0.65 – mA Low gain mode – 15.3 – dB High gain mode – -7.8 – dB Low gain mode – -38 – dB High gain mode – -7.8 – dB Low gain mode – 1.2 – dB High gain mode – 7.8 – dB Low gain mode – -14 – dB 50 Ω, high gain mode S11LG – -15 – dB 50 Ω, low gain mode S22HG – -13 – dB 50 Ω, high gain mode S22LG – -20 – dB 50 Ω, low gain mode Stability factor k – >2.3 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -6 – dBm High gain mode – -10 – dBm Low gain mode – -10 1 – dBm High gain mode Low gain mode Pass band range band 20 Current consumption Gain Reverse Isolation 2) Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 5 on Page 27 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 15 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.12 Measured RF Characteristics UMTS Bands 5 / 6 Table 11 Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition Min. Typ. Max. Pass band range band 5 869 – 894 MHz – Pass band range band 6 875 – 885 MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 3.4 – mA High gain mode – 0.65 – mA Low gain mode – 16.0 – dB High gain mode – -7.5 – dB Low gain mode – -36 – dB High gain mode – -7.5 – dB Low gain mode – 1.1 – dB High gain mode – 7.5 – dB Low gain mode – -16 – dB 50 Ω, high gain mode S11LG – -17 – dB 50 Ω, low gain mode S22HG – -17 – dB 50 Ω, high gain mode S22LG – -13 – dB 50 Ω, low gain mode Stability factor k – >2.3 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -6 – dBm High gain mode – -8 – dBm Low gain mode – -7 2 – dBm High gain mode Low gain mode Current consumption Gain Reverse Isolation 2) Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 2 on Page 24 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 16 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.13 Measured RF Characteristics UMTS Band 8 Table 12 Typical Characteristics 900 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition – Min. Typ. Max. 925 – 960 MHz ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 3.4 – mA High gain mode – 0.65 – mA Low gain mode – 16.1 – dB High gain mode – -7.1 – dB Low gain mode – -36 – dB High gain mode – -7.1 – dB Low gain mode – 1.1 – dB High gain mode – 7.1 – dB Low gain mode – -16 – dB 50 Ω, high gain mode S11LG – -15 – dB 50 Ω, low gain mode S22HG – -15 – dB 50 Ω, high gain mode S22LG – -16 – dB 50 Ω, low gain mode Stability factor k – >2.3 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -5 – dBm High gain mode – -8 – dBm Low gain mode – -6 2 – dBm High gain mode Low gain mode Pass band range band 8 Current consumption Gain Reverse Isolation 2) Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3 on Page 25 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 17 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.14 Measured RF Characteristics UMTS Bands 3 / 9 Table 13 Typical Characteristics 1800 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition Min. Typ. Max. Pass band range band 3 1805 – 1880 MHz – Pass band range band 9 1844.9 – 1879.9 MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 3.4 – mA High gain mode – 0.65 – mA Low gain mode – 16.2 – dB High gain mode – -8.7 – dB Low gain mode – -36 – dB High gain mode – -8.7 – dB Low gain mode – 1.1 – dB High gain mode – 8.7 – dB Low gain mode – -13 – dB 50 Ω, high gain mode S11LG – -14 – dB 50 Ω, low gain mode S22HG – -19 – dB 50 Ω, high gain mode S22LG – -15 – dB 50 Ω, low gain mode Stability factor k – >2.5 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -7 – dBm High gain mode – -6 – dBm Low gain mode – -6 3 – dBm High gain mode Low gain mode Current consumption Gain Reverse Isolation 2) Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3 on Page 25 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 18 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.15 Measured RF Characteristics UMTS Band 2 Table 14 Typical Characteristics 1900 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition – Min. Typ. Max. 1930 – 1990 MHz ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 3.4 – mA High gain mode – 0.65 – mA Low gain mode – 16.0 – dB High gain mode – -7.8 – dB Low gain mode – -35 – dB High gain mode – -7.8 – dB Low gain mode – 1.1 – dB High gain mode – 7.8 – dB Low gain mode – -19 – dB 50 Ω, high gain mode S11LG – -18 – dB 50 Ω, low gain mode S22HG – -20 – dB 50 Ω, high gain mode S22LG – -15 – dB 50 Ω, low gain mode Stability factor k – >2.4 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -7 – dBm High gain mode – -7 – dBm Low gain mode – -6 3 – dBm High gain mode Low gain mode Pass band range band 2 Current consumption Gain Reverse Isolation 2) Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 2 on Page 24 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 19 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.16 Measured RF Characteristics UMTS Bands 1 / 4 / 10 Table 15 Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition Min. Typ. Max. Pass band range band 1 2110 – 2170 MHz – Pass band range band 4 2110 – 2155 MHz – Pass band range band 10 2110 – 2170 MHz – ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 4.0 – mA High gain mode – 0.65 – mA Low gain mode – 17.2 – dB High gain mode – -7.8 – dB Low gain mode – -35 – dB High gain mode – -7.8 – dB Low gain mode – 1.1 – dB High gain mode – 7.8 – dB Low gain mode – -16 – dB 50 Ω, high gain mode S11LG – -17 – dB 50 Ω, low gain mode S22HG – -23 – dB 50 Ω, high gain mode S22LG – -12 – dB 50 Ω, low gain mode Stability factor3) k – >2.3 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -10 – dBm High gain mode – -6 – dBm Low gain mode – -3 3 – dBm High gain mode Low gain mode Current consumption Gain Reverse Isolation2) Noise figure Input return loss 2) 2) Output return loss 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 2 on Page 24 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 20 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.17 Measured RF Characteristics UMTS Band 40 Table 16 Typical Characteristics 2300 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition – Min. Typ. Max. 2300 – 2400 MHz ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 4.0 – mA High gain mode – 0.65 – mA Low gain mode – 17.1 – dB High gain mode – 7.0 – dB Low gain mode – -33 – dB High gain mode – -7.0 – dB Low gain mode – 1.1 – dB High gain mode – 7.0 – dB Low gain mode – -20 – dB 50 Ω, high gain mode S11LG – -18 – dB 50 Ω, low gain mode S22HG – -20 – dB 50 Ω, high gain mode S22LG – -11 – dB 50 Ω, low gain mode Stability factor k – >2.0 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -10 – dBm High gain mode – -4 – dBm Low gain mode – -2 6 – dBm High gain mode Low gain mode Pass band range band 40 Current consumption Gain Reverse Isolation 2) Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 4 on Page 26 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 21 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.18 Measured RF Characteristics UMTS Band 38 Table 17 Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition – Min. Typ. Max. 2570 – 2620 MHz ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 3.4 – mA High gain mode – 0.65 – mA Low gain mode – 15.5 – dB High gain mode – -6.5 – dB Low gain mode – -33 – dB High gain mode – -6.5 – dB Low gain mode – 1.2 – dB High gain mode – 6.5 – dB Low gain mode – -14 – dB 50 Ω, high gain mode S11LG – -13 – dB 50 Ω, low gain mode S22HG – -13 – dB 50 Ω, high gain mode S22LG – -13 – dB 50 Ω, low gain mode Stability factor k – >2.0 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -7 – dBm High gain mode – -2 – dBm Low gain mode – -3 7 – dBm High gain mode Low gain mode Pass band range band 38 Current consumption Gain Reverse Isolation 2) Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3 on Page 25 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 22 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.19 Measured RF Characteristics UMTS Band 7 Table 18 Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Parameter Values Unit Note / Test Condition – Min. Typ. Max. 2620 – 2690 MHz ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG – 4.0 – mA High gain mode – 0.65 – mA Low gain mode – 15.6 – dB High gain mode – -6.3 – dB Low gain mode – -32 – dB High gain mode – -6.3 – dB Low gain mode – 1.2 – dB High gain mode – 6.3 – dB Low gain mode – -16 – dB 50 Ω, high gain mode S11LG – -12 – dB 50 Ω, low gain mode S22HG – -14 – dB 50 Ω, high gain mode S22LG – -13 – dB 50 Ω, low gain mode Stability factor k – >2.0 – Input compression point2) IP1dBHG IP1dBLG IIP3HG IIP3LG – -7 – dBm High gain mode – -3 – dBm Low gain mode – -2 9 – dBm High gain mode Low gain mode Pass band range band 7 Current consumption Gain Reverse Isolation 2) Noise figure Input return loss 2) 2) Output return loss 3) 2) Inband IIP3 f1 - f2 = 1 MHz DC to 8 GHz; all gain modes 1) Performance based on application circuit in Figure 3 on Page 25 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 23 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3 Application Circuit and Block Diagram 3.1 UMTS Bands 1, 2, 4, 5, 6 and 10 Application Circuit Schematic C7 10nF 0 5 VCC = 2 .8V VGS = 0 / 2 .8V GND n/c 4 RFGNDH 3 VCC 2 VGS n/c 1 C1 10 pF RFIN Band 2 L1 3 .3nHL1 C3 10 pF RFIN Bands 1 / 4 / 10 6 16 RFINM RFOUT Band 2 RFOUTM C2 22pF L2 2 .7nHL1 7 15 RFINH RFOUTH RFOUT Bands 1 / 4 / 10 C4 22pF 8 14 RFGNDM 9 n/c Biasing & Logic Circuitry 10 RFINL 11 VEN2 12 VEN1 RREF 13 R REF C5 3.0 pF RFIN Bands 5 / 6 RFOUT Bands 5 / 6 RFOUTL 27 kΩ L3 9.1nHL1 VEN = 0 / 2.8V VEN = 0 / 2.8V C6 22 pF BGA735N16_Appl_Bands_1_2_4_5_6_10_BlD.vsd Figure 2 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 19 Bill of Materials Part Number Part Type Manufacturer Size Comment L1 ... L3 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C7 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 24 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3.2 UMTS Bands 3, 7, 8, 9 and 38 Application Circuit Schematic V CC = 2.8V C9 10nF 0 GND 5 n/c RFIN Bands 3 / 9 4 RFGNDH 3 VCC 2 VGS n /c 1 L4 1.5nH C1 22 pF L1 4.3 nHL1 C2 22pF RFIN Bands 7 / 38 VGS = 0 / 2 .8V 6 16 RFINM RFOUTM C4 3 pF L5 3.9 nH 7 C3 22pF L1 15 RFINH C8 1pF RFOUTH L2 2.4nH L6 3.3nH 8 14 RFGNDM 9 n/c RFIN Band 8 RFOUT Bands 3 / 9 C7 1.5pF Biasing & Logic Circuitry 10 RFINL 11 VEN2 RFOUT Bands 7 / 38 RFOUT Band 8 RFOUTL 12 VEN1 RREF 13 R REF C5 3 pF 27 kΩ L3 8.5nHL1 VEN = 0 / 2.8V VEN = 0 / 2.8V C6 22 pF BGA735N16_Appl_Bands_3_7_8_9_38_BlD.vsd Figure 3 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 20 Bill of Materials Part Number Part Type Manufacturer Size Comment L1 ... L6 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C9 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 25 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3.3 UMTS Bands 2, 12, 13, 14, 17 and 40 Application Circuit Schematic C8 10nF 0 4 RFGNDH 3 VCC n /c 2 VGS 1 C1 10 pF 6 L1 3.3nHL1 C2 22pF RFIN Band 40 V GS = 0 / 2.8V GND 5 n/c RFIN Band 2 VCC = 2.8V RFOUTM C4 10pF L4 3.6nH 7 C3 56 pF RFOUT Band 40 15 RFINH L1 RFOUTH L2 2.7nH C7 8 .2pF 8 RFOUT Bands 12 / 13 / 14 / 17 14 RFGNDM RFOUTL Biasing & Logic Circuitry 9 n /c RFIN Bands 12 / 13 / 14 / 17 RFOUT Band 2 16 RFINM 10 RFINL 11 VEN2 L5 7.5nH 12 VEN1 RREF 13 R REF 27 kΩ C5 3pF L3 11nHL1 VEN = 0 / 2.8V VEN = 0 / 2 .8V C6 100pF BGA735N16_Appl_Bands_2_12_13_14_17_40_BlD.vsd Figure 4 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 21 Bill of Materials Part Number Part Type Manufacturer Size Comment L1 ... L5 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C8 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 26 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3.4 UMTS Bands 1, 2, 4, 10 and 20 Application Circuit Schematic VCC = 2.8V C8 10nF 0 5 V GS = 0 / 2.8V GND 4 n/c RFGNDH 3 VCC 2 VGS n /c 1 C1 10pF RFIN Band 2 RFIN Bands 1 / 4 / 10 L1 3.3nHL1 C2 22pF C3 10pF 6 RFOUTM 7 L2 L1 2 .7nHL C4 22pF RFOUT Band 2 16 RFINM RFOUT Bands 1 / 4 / 10 15 RFINH RFOUTH C7 8 .2pF 8 RFGNDM 9 RFIN Band 20 RFOUT Band 20 14 Biasing & Logic Circuitry 10 RFINL n/c 11 VEN2 RFOUTL L4 9.1nH 12 VEN 1 RREF 13 R REF C5 3 .3pF 27 kΩ L3 9.1 nHL1 VEN = 0 / 2 .8V VEN = 0 / 2 .8V C6 100 pF BGA735N16_Appl_Bands_1_2_4_10_20_BlD.vsd Figure 5 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 22 Bill of Materials Part Number Part Type Manufacturer Size Comment L1 ... L4 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C8 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 27 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3.5 Pin Description Table 23 Pin Definition and Function Pin No. Name Pin Type Buffer Type Function 0 GND – – Ground connection for low band LNA and control circuitry (package paddle) 1 n/c – – Not connected 2 VGS – – Gain step control 3 VCC – – Supply voltage 4 RFGNDH – – High band LNA emitter ground 5 n/c – – Not connected 6 RFINM – – Mid band LNA input 7 RFINH – – High band LNA input 8 RFGNDM – – Mid band LNA emitter ground 9 n/c – – Not connected 10 RFINL – – Low band LNA input 11 VEN2 – – Band select control 12 VEN1 – – Band select control 13 RREF – – Bias current reference resistor (high gain mode) 14 RFOUTL – – Low band output 15 RFOUTH – – High band LNA output 16 RFOUTM – – Mid band LNA output Data Sheet 28 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3.6 Application Board 7RS/D\HUWRSYLHZ 0LGGOH/D\HUWRSYLHZ %RWWRP/D\HUWRSYLHZ %*$1B$SSB%RDUGYVG Figure 6 Application Board Layout on 3-layer FR4 Note: Top layer thickness: 0.2 mm, bottom layer thickness: 0.660 mm, 17 µm Cu metallization, gold plated. Board size: 21mm x 50 mm. PP&RSSHU PP3UHSUHJ)5 PP3UHSUHJ)5 PP&RSSHU PP)5 PP3UHSUHJ)5 PP3UHSUHJ)5 PP&RSSHU %*$1B&URVVB6HFWLRQB9LHZYVG Figure 7 Data Sheet Cross-Section View of Application Board 29 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA 5)*1'0 QF *6 *1' 5)2870 5)287+ 5)287/ 55() 5),1+ (1 (1 5),10 5),1/ 9&& 5*1'+ Application Circuit and Block Diagram %*$1B$SSB%RDUGBGHWDLOYVG Figure 8 Detail of Application Board Layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 30 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Physical Characteristics 4 Physical Characteristics 4.1 Package Footprint 7613)3YVG Figure 9 Data Sheet Recommended Footprint and Stencil Layout for the TSNP-16-1 Package 31 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Physical Characteristics 4.2 Package Dimensions 761332YVG Figure 10 Data Sheet Package Outline (Top, Side and Bottom View) 32 Revision 3.8, 2010-12-23 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG