IRF 10ETF12

Bulletin I2188 12/04
QUIETIR Series
10ETF12PbF
FAST SOFT RECOVERY
RECTIFIER DIODE
Lead-Free ("PbF" suffix)
VF
< 1.33V @ 10A
trr
= 80ns
VRRM = 1200V
Description/ Features
The 10ETF12PbF fast soft recovery QUIETIR
rectifier series has been optimized for combined
short reverse recovery time and low forward
voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Package Outline
Major Ratings and Characteristics
Values
Units
10
A
VRRM
1200
V
IFSM
160
A
1.33
V
80
ns
- 40 to 150
°C
Characteristics
IF(AV) Sinusoidal waveform
VF
@ 10 A, TJ = 25°C
trr
@ 1A, 100A/µs
TJ
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TO-220AC
1
10ETF12PbF QUIETIR Series
Bulletin I2188 12/04
Voltage Ratings
Part Number
VRRM , maximum
VRSM , maximum non repetitive
IRRM
peak reverse voltage
peak reverse voltage
150°C
V
V
mA
1200
1300
4
10ETF12
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
IFSM
2
I t
10ETF..
Units
10
A
Max. Peak One Cycle Non-Repetitive
160
Surge Current
185
2
Max. I t for fusing
128
A
A2s
180
2
I √t
2
Max. I √t for fusing
Conditions
@ TC = 125° C, 180° conduction half sine wave
10ms Sine pulse, rated VRRM applied
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, rated VRRM applied
10ms Sine pulse, no voltage reapplied
2
1800
A √s
10ETF..
Units
t = 0.1 to 10ms, no voltage reapplied
Electrical Specifications
Parameters
VFM
Max. Forward Voltage Drop
1.33
V
rt
Forward slope resistance
22.9
mΩ
VF(TO) Threshold voltage
0.96
V
IRM
0.1
Max. Reverse Leakage Current
mA
4
Conditions
@ 10A, TJ = 25°C
TJ = 150°C
TJ = 25 °C
TJ = 150 °C
VR = rated V RRM
Recovery Characteristics
Parameters
10ETF..
Units
Conditions
trr
Reverse Recovery Time
310
ns
IF @ 10Apk
Irr
Reverse Recovery Current
4.7
A
@ 25A/ µs
Qrr
Reverse Recovery Charge
1.05
µC
S
Typical Snap Factor
0.6
2
@ 25°C
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10ETF12PbF QUIETIR Series
Bulletin I2188 12/04
Thermal-Mechanical Specifications
Parameters
10ETF..
Units
TJ
Max. Junction Temperature Range
- 40 to 150
°C
Tstg
Max. Storage Temperature Range
- 40 to 150
°C
RthJC Max. Thermal Resistance Junction
to Case
RthJA Max. Thermal Resistance Junction
to Ambient
1.5
°C/W
62
°C/W
RthCS Typical Thermal Resistance, Case to
Heatsink
0.5
°C/W
2 (0.07)
g (oz.)
Min.
6 (5)
Max.
12 (10)
Kg-cm
(Ibf-in)
wt
Approximate Weight
T
Mounting Torque
Case Style
TO-220AC
10ETF.. Series
R thJC (DC) = 1.5 °C/ W
145
140
Cond uction Angle
135
130
30°
125
60°
90°
120°
180°
120
0
2
Mounting surface , smooth and greased
JEDEC
10ETF12
150
115
DC operation
4
6
8
10
12
Maximum Allowa ble Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Marking Device
Conditions
150
10ETF.. Series
R thJC (DC) = 1.5 °C/ W
145
140
Conduc tion Period
135
130
30°
125
60°
90°
120
115
120°
0
180°
120°
90°
60°
30°
12
10
RMS Limit
8
6
Conduction Angle
4
10.TF.. Series
T J = 150°C
2
0
0
2
4
6
8
6
8
10
12
14
16
Fig. 2 - Current Rating Characteristics
10
Ma ximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
Fig. 1 - Current Rating Characteristics
14
4
DC
Average Forward Current (A)
Average Forward Current (A)
16
2
180°
24
DC
180°
120°
90°
60°
30°
20
16
12
RMS Limit
8
Conduction Period
4
10ETF.. Series
TJ = 150°C
0
0
2
4
6
8
10
12
14
16
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
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3
10ETF12PbF QUIETIR Series
180
At Any Rated Load Condition And With
Rated VRRM Ap plied Following Surge.
160
Initial TJ = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
140
120
100
80
60
10ETF.. Series
40
1
10
200
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Bulletin I2188 12/04
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
180
Initial TJ = 150°C
No Voltage Reapp lied
Rated VRRM Reapplied
160
140
120
100
80
60
10ETF.. Series
40
0.01
100
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
1000
TJ= 25°C
100
TJ= 150°C
10
10ETF.. Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous Forward Voltage (V)
0.6
Maximum Reverse Recovery Time - Trr (µs)
Maximum Reverse Recovery Time - Trr (µs)
Fig. 7 - Forward Voltage Drop Characteristics
10ETF.. Series
TJ = 25 °C
0.5
0.4
0.3
I FM = 10 A
0.2
8A
5A
0.1
2A
1A
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25°C
4
0.8
10ETF.. Series
TJ = 150 °C
0.6
0.4
I FM = 10 A
8A
0.2
5A
2A
1A
0
0
40
80
120
160
200
Rate Of Fall Of Forwa rd Current - di/ dt (A/ µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150°C
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10ETF12PbF QUIETIR Series
2
10ETF.. Series
TJ = 25 °C
1.6
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Recovery Charge - Qrr (µC)
Bulletin I2188 12/04
I FM = 10 A
8A
1.2
5A
0.8
2A
0.4
0
1A
0
40
80
120
160
200
20
I FM = 10 A
8A
5A
12
2A
8
1A
4
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
8A
3
5A
2
2A
1
1A
0
0
40
80
120
160
200
25
10ETF.. Series
TJ = 150 °C
I FM = 10 A
20
8A
15
5A
2A
10
1A
5
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25°C
Transient Thermal Impedanc e Z thJC (°C/W)
I FM = 10 A
4
Fig. 11 - Recovery Charge Characteristics, TJ = 150°C
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Current - Irr (A)
Fig. 10 - Recovery Charge Characteristics, TJ = 25°C
16
10ETF.. Series
TJ = 150 °C
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
10ETF.. Series
TJ = 25 °C
5
Fig. 13 - Recovery Current Characteristics, TJ = 150°C
10
Steady State Value
(DC Operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
10ETF.. Series
Single Pulse
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
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10ETF12PbF QUIETIR Series
Bulletin I2188 12/04
Outline Table
10.54 (0.41)
2MAX.
1.32 (0.05)
3.78 (0.15)
3.54 (0.14)
1.22 (0.05)
DIA.
6.48 (0.25)
6.23 (0.24)
2.92 (0.11)
2.54 (0.10)
TERM 2
15.24 (0.60)
14.84 (0.58)
1
2°
3
14.09 (0.55)
3.96 (0.16)
13.47 (0.53)
3.55 (0.14)
0.10 (0.004)
2.04 (0.080) MAX.
1.40 (0.05)
1.15 (0.04)
0.94 (0.04)
2.89 (0.11)
Base
Cathode
2.64 (0.10)
2
0.69 (0.03)
1
3
4.57 (0.18)
0.61 (0.02) MAX.
1
3
Cathode
Anode
4.32 (0.17)
Dimensions in millimeters and inches
5.08 (0.20) REF.
Part Marking Information
IRMX Assembly Line
EXAMPLE: THIS IS A 10ETF12
LOT CODE 1789
ASSEMBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "C"
6
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
ASSEMBLY
LOT CODE
YEAR 1 = 2001
WEEK 19
P = LEAD-FREE
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10ETF12PbF QUIETIR Series
Bulletin I2188 12/04
Ordering Information Table
Device Code
10
E
T
F
12
PbF
1
2
3
4
5
6
1
-
Current Rating (10 = 10A)
2
-
Circuit Configuration:
3
-
Package:
E = Single Diode
T = TO-220AC
4
-
Type of Silicon:
5
-
Voltage Rating (12 = 1200V)
6
-
y none = Standard Production
F = Fast Soft Recovery Rectifier
y PbF = Lead-Free
6
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 12/04
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