BFS482 NPN Silicon RF Transistor 4 For low-noise. high-gain broadband amplifiers 5 6 at collector currents from 0.2 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two (galvanic) internal isolated 2 3 1 Transistors in one package VPS05604 C1 E2 B2 6 5 4 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFS482 RGs Pin Configuration Package 1=B 2=E 3=C 4=B 5=E 6=C SOT363 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 81 °C 1) Thermal Resistance Junction - soldering point2) RthJS 275 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jun-27-2001 BFS482 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 10 mA, VCE = 8 V 2 Jun-27-2001 BFS482 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT 6 8 - Ccb - 0.3 0.45 Cce - 0.12 - Ceb - 0.65 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1.2 - f = 1.8 GHz - 1.9 - Gms - 19.5 - Gma - 13 - - 15.5 - - 10 - Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ms 2G ma = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2) 3 Jun-27-2001 BFS482 Total power dissipation Ptot = f (TS ) 300 P tot mW 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Jun-27-2001 BFS482 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 0.50 8.0 8V pF GHz 0.40 6.0 5V fT Ccb 0.35 0.30 0.25 5.0 3V 4.0 0.20 2V 3.0 0.15 1V 2.0 0.7V 0.10 1.0 0.05 0.00 0 4 8 12 V 16 0.0 0 24 5 10 15 20 25 30 VCB 35 mA 45 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 14 22 dB 8V dB 5V 10V 18 10 16 3V G G 5V 3V 8 2V 14 2V 6 12 1V 4 10 1V 0.7V 2 8 0.7V 6 0 5 10 15 20 25 30 35 mA 0 0 45 IC 5 10 15 20 25 30 35 mA 45 IC 5 Jun-27-2001 BFS482 Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 22 28 IC=10mA dBm 0.9GHz dB 8V 24 5V 22 IP 3 G 18 0.9GHz 16 20 3V 18 14 1.8GHz 2V 16 12 14 1.8GHz 12 10 1V 10 8 8 6 0 1 2 3 4 5 6 7 8 V 6 0 10 4 8 12 16 20 VCE mA 28 IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 32 28 IC=10mA dB IC =10mA dB 24 22 24 S21 G 20 20 18 16 16 14 12 12 10 8V 8 8 1V 8V 6 0.7V 1V 4 4 0.7V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 0 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 6 Jun-27-2001