Silicon Schottky Diode ● ● ● ● ● ● BAT 32 RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mil-tested diodes available ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Frequency band (GHz) BAT 32 … 18 (X, Ku) Marking Ordering Code (tape and reel) 32 Pin Configuration Q62702-A826 Package1) Cerec-X Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 6.5 V Forward current IF 50 mA Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Operating temperature range Top – 55 … + 150 1) For detailed information see chapter Package Outlines. BAT 32 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 6.5 – – – – 0.2 0.6 – – Breakdown voltage IR = 1 mA V(BR) Forward voltage IF = 1 mA IF = 10 mA VF Diode capacitance VR = 0.15 V, f= 1 MHz CT – 0.20 0.24 pF Differential resistance VF = 0, f= 10 kHz Ro – 15 – kΩ Forward current IF = f (VF) V