CGY 181 GaAs MMIC ________________________________________________________________________________________________________ Preliminary Datasheet * Power amplifier for PCN/PCS applications * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35 % * Input matched to 50 Ω, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (8-mm taped) Package 1) CGY 181 CGY 181 Q68000-A8883 MW 12 Maximum ratings Characteristics Symbol max. Value Unit Positive supply voltage VD 9 V Negative supply voltage 2) VG -8 V Supply current ID 2 A Channel temperature TCh 150 °C Storage temperature Tstg -55...+150 °C RF input power Pin Ptot 25 dBm 5 W RthChS ≤14 K/W Total power dissipation (Ts ≤ 81 °C) Ts: Temperature at soldering point Thermal Resistance Channel-soldering point 1) Plastic body identical to SOT 223, dimensions see chapter Package Outlines 2) VG = -8V only in combination with VTR = 0V; VG = -6V while VTR ≠ 0V Siemens Aktiengesellschaft pg. 1/14 01.02.96 HL EH PD 21 CGY 181 GaAs MMIC ________________________________________________________________________________________________________ Functional block diagramm: VG (1) VTR (2) VD1 (7) Short description of CGY181 operation: VD2 (11) Control Circuit Pin (8) Pout (11) GND1 (6,9) GND2 (3, 4, 5, 10) A negative voltage between -4V to -6V (stabilization not necessary) has to be connected to the VG-pin, a positive supply voltage has to be applied to the VD-pins. The VTR-pin has to switched to 0V (GND) during transmit operation. The MMIC CGY181 is self-biased, the operating current is adjusted by the internal control circuit. In receive mode the VTR-pin is not connected (shut off mode). Pin # Configuration 1 VG Negative voltage at control circuit (-4V...-8V) 2 VTR Control voltage for transmit mode (0V) or receive mode (open) 3,4,5,10 GND 2 RF and DC ground of the 2nd stage 6,9 GND 1 RF and DC ground of the 1st stage 7 VD1 Positive drain voltage of the 1st stage 8 RFin RF input power 11 VD2,RFout 12 - Positive drain voltage of the 2nd stage, RF output power not connected DC characteristics Characteristics Drain current Symbol Conditions stage 1 IDSS1 VD=3V, VG=0V, VTR n.c. stage 2 IDSS2 min typ max Unit 0.6 0.9 1.2 A 2.4 3.5 4.8 A Drain current with active current control ID VD=3V, VG=-4V, VTR=0V Transconductance gfs1 VD=3V, ID=350mA 0.28 0.32 - S (stage 1 and 2) gfs2 VD=3V, ID=700mA 1.1 1.3 - S Vp VD=3V, ID<500µA -3.8 -2.8 -1.8 V Pinch off voltage 1.0 A (all stages) Siemens Aktiengesellschaft pg. 2/14 01.02.96 HL EH PD 21 CGY 181 GaAs MMIC ________________________________________________________________________________________________________ Electrical characteristics (TA = 25°C , f=1.75 GHz, ZS=ZL=50 Ohm, VD=3.6V, VG =-4V, VTR pin connected to ground, unless otherwise specified) Characteristics Supply current Symbol min typ max Unit IDD - 1.2 - A IG - 2 3 mA ID - 400 - µA IG - 10 - µA G - 20.5 - dB G 14.5 15.5 - dB G 17.5 18.5 - dB P0 30.5 31.5 - dBm P0 33.5 34.5 - dBm η - 37 - % η - 35 - % - - dBc IP3 -44.8 -70 -45.1 -75 1.9:1 41 IP3 44 Pin= 0 dBm Negative supply current (normal operation) Shut-off current VTR n.c. Negative supply current (shut off mode, VTR pin n.c.) Small signal gain Pin = -5dBm Power Gain VD=3.6V, Pin = 16 dBm Power Gain VD=5V, Pin = 16 dBm Output Power VD=3.6V, Pin = 16 dBm Output Power VD=5V , Pin = 16 dBm Overall Power Added Efficiency VD=3.6V, Pin = 16 dBm Overall Power Added Efficiency VD=5V, Pin = 16 dBm Harmonics (Pin =16dBm) 2f0 VD=3.6V (Pout=31.85dBm) 3f0 Harmonics (Pin =16dBm) 2f0 VD=5V (Pout=31.85dBm) 3f0 Input VSWR VD=3.6V Third order intercept point dBc dBm f1=1.7500GHz; f2=1.7502GHz; VD = 3.6V Third order intercept point dBm f1=1.7500GHz; f2=1.7502GHz; VD = 5V All RF-measurements were done in a pulsed mode with a duty cycle of 10% (ton=0.33ms)! Siemens Aktiengesellschaft pg. 3/14 01.02.96 HL EH PD 21 CGY 181 GaAs MMIC ________________________________________________________________________________________________________ DC-ID(VG) characteristics - typical values of stage 1, VD=3V 1,2 High current 1 ID [A] Medium current Low current 0,8 0,6 0,4 0,2 0 -5 -4,5 -4 -3,5 -3 -2,5 -2 -1,5 -1 -0,5 0 VG [V] DC-Output characteristics - typical values of stage 1 0,8 VG=-0.25 V 0,7 -0.50 V Ptot=1.25 W 0,6 -0.75 V ID [A] 0,5 -1.00 V -1.25 V 0,4 -1.50 V 0,3 -1.75 V 0,2 -2.00 V 0,1 -2.25 V 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 VD [V] Pin 2 ( VTR ) has to be open during measuring DC-characteristics! Siemens Aktiengesellschaft pg. 4/14 01.02.96 HL EH PD 21 6 CGY 181 GaAs MMIC ________________________________________________________________________________________________________ DC-ID(VG) characteristics - typical values of stage 2, VD=3V 4,5 High current 4 Low current ID [A] Medium current 3,5 3 2,5 2 1,5 1 0,5 0 -5 -4,5 -4 -3,5 -3 -2,5 -2 -1,5 -1 -0,5 0 VG [V] DC-Output characteristics - typical values of stage 2 3 VG=-0.50 V 2,5 Ptot=3.75 W -0.75 V ID [A] 2 -1.00 V -1.25 V 1,5 -1.50 V 1 -1.75 V -2.00 V 0,5 -2.25 V -2.50 V 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 VD [V] Pin 2 ( VTR ) has to be open during measuring DC-characteristics! Siemens Aktiengesellschaft pg. 5/14 01.02.96 HL EH PD 21 6 CGY 181 GaAs MMIC ________________________________________________________________________________________________________ Pout and PAE vs. Pin 40 40 35 35 30 30 25 25 20 20 15 15 10 PAE [%] Pout [dBm] ( VD=3.6V,VG=-4V,f=1.75GHz, pulsed with a duty cycle of 10%, ton=0.33ms ) 10 Pout [dBm] PAE [%] 5 5 0 0 -5 0 5 10 15 20 Pin [dBm] Pout and PAE vs. Pin 40 35 35 30 30 25 25 20 20 15 15 10 Pout [dBm] PAE [%] 10 5 5 0 -5 0 5 10 15 20 Pin [dBm] Siemens Aktiengesellschaft pg. 6/14 01.02.96 HL EH PD 21 PAE [%] Pout [dBm] ( VD=5V,VG=-4V,f=1.75GHz, pulsed with a duty cycle of 10%, ton=0.33ms ) CGY 181 GaAs MMIC ________________________________________________________________________________________________________ Output power at different temperatures (VD=3.6V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms) 33 32 31 30 29 28 Pout [dBm] 27 26 25 24 23 22 T=-20°C T=+20°C T=+70°C 21 20 19 18 17 16 15 14 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 Pin [dBm] Power added efficiency at different temperatures ( VD=3.6V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms) 45 40 35 PAE [%] 30 25 20 T=-20°C T=+20°C T=+70°C 15 10 5 0 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 Pin [dBm] Siemens Aktiengesellschaft pg. 7/14 01.02.96 HL EH PD 21 20 CGY 181 GaAs MMIC ________________________________________________________________________________________________________ Output power at different temperatures Pout [dBm] (VD=5V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms) 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 T=-20°C T=+20°C T=+70°C -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 Pin [dBm] Power added efficiency at different temperatures ( VD=5V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms) 40 35 PAE [%] 30 25 20 T=-20°C T=+20°C T=+70°C 15 10 5 0 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 Pin [dBm] Siemens Aktiengesellschaft pg. 8/14 01.02.96 HL EH PD 21 20 CGY 181 GaAs MMIC ________________________________________________________________________________________________________ Measured S-parameter at VD=3.6V and Pin=16dBm (VG=-4V, VTR connected to ground, pulsed with a duty cycle of 10%, ton=0.33ms) 30 25 20 MAG [dB] 15 10 5 MAG [S11] 0 MAG [S21] -5 -10 -15 -20 1400 1500 1600 1700 1800 1900 2000 2100 f [MHz] Measured S-parameter at VD=5V and Pin=16dBm (VG=-4V, VTR connected to ground, pulsed with a duty cycle of 10%, ton=0.33ms) 30 25 20 MAG [dB] 15 10 5 MAG [S11] 0 MAG [S21] -5 -10 -15 -20 1400 1500 1600 1700 1800 1900 2000 2100 f [MHz] Siemens Aktiengesellschaft pg. 9/14 01.02.96 HL EH PD 21 CGY 181 GaAs MMIC ________________________________________________________________________________________________________ Pout vs. VD ( VG=-4V,f=1.75GHz, Pin=16dBm,pulsed with a duty cycle of 10%, ton=0.33ms) 37 36 Pout [dBm] 35 34 33 32 31 30 29 28 2,5 3 3,5 4 4,5 5 5,5 6 VD [V] Performance of internal bias control circuit @VD=3V (VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms) 4,0 High current 3,5 Medium current 3,0 Low current ID [A] 2,5 2,0 1,5 1,0 0,5 0,0 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 -VG [V] Performance of internal bias control circuit @VD=5V (VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms) 3,5 High current 3,0 Medium current ID [A] 2,5 Low current 2,0 1,5 1,0 0,5 0,0 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 -VG [V] Siemens Aktiengesellschaft pg. 10/14 01.02.96 HL EH PD 21 GaAs MMIC CGY 181 ________________________________________________________________________________________________________ Total Power Dissipation Ptot=f(TS) Permissible pulse load Ptot_max/Ptot_DC = f(t_p) Siemens Aktiengesellschaft pg. 11/14 01.02.96 HL EH PD 21 CGY 181 GaAs MMIC ________________________________________________________________________________________________________ CGY181 application board: Part Type CGY181 Description: Siemens GaAs-MMIC 1nF 1nF 1nF Capacitor SMD 0805 Capacitor SMD 0805 Capacitor SMD 0805 1p2 Capacitor SMD 0805 4µ7 Capacitor SMD Tantal 43nH Coilcraft SMD Spring Inductor B10T (distributed by Ginsbury Electronic GmbH Am Moosfeld 85, D-81829 München Tel.: 089/45170-223) Layout size is 30mm x 26mm. Principal circuit: Original Size: VG +VD 1nF 4.7uF 1nF 43nH VG (1) VTR (2) VTR VD1 (7) VD2 (11) Control Circuit 1nF IN Pout (11) Pin (8) OUT 1.2pF GND1 (6, 9) Siemens Aktiengesellschaft GND2 (3, 4, 5, 10) pg. 12/14 01.02.96 HL EH PD 21 CGY 181 GaAs MMIC ________________________________________________________________________________________________________ Emissions due to GMSK modulation: Measurement was done with the following equipment: negative supply voltage -4V Pulsed Power Supply Trigger VD=3.6V pulsed with a duty cycle of 10% gate delay 150us gate length 75us ton=0.577ms VG PCN Signal Generator VD Pin=16dBm ROHDE&SCHWARZ SME03 Siemens Aktiengesellschaft IN CGY181 OUT VTR pg. 13/14 Spectrum Analyzer HP 8561E 01.02.96 HL EH PD 21 GaAs MMIC CGY 181 ________________________________________________________________________________________________________ APPLICATION - HINTS 1. CW - capability of the CGY181 Proving the possibility of CW - operations there must be known the total power dissipation of the device. This value can be found as a function of temperature in the datasheet (page 12). The CGY181 has a maximum total power dissipation of Ptot = 5 W. As an example we take the operating point with a drain voltage VD = 3.6 V and a typical drain current of ID=1.2A. So the maximum DC - power can be calculated to: PDC = VD ⋅ I D = 4. 32W . This value is smaller than 5W and CW - operation is possible. By decoupling RF power out of the CGY181 the power dissipation of the device can be further reduced. Assuming a power added efficiency PAE of 35 % the total power dissipation Ptot can be calculated using the following formula: P = P (1 − PAE ) = 4. 32W (1 − 0. 35) = 2.808W tot DC 2. Operation without using the internal current control If you don' t want to use the internal current control, it is recommended to connect the negative gate voltage at pin 2 (VTR) instead of pin 1 (VG). In that case VG is not connected. 3. Biasing and use considerations Biasing should be timed in such a way the that gate voltage (VG) is always applied before the drain voltages (VD), and when returning to the standby mode, the drain voltages have be removed before the gate voltage. Siemens Aktiengesellschaft pg. 14/14 01.02.96 HL EH PD 21