BB 512 Silicon Variable Capacitance Diode ● For AM tuning applications ● Specified tuning range 1 … 8 V BB 512 Type Ordering Code (tape and reel) Pin Configuration 1 2 Marking Package BB 512 Q62702-B479 C white M SOD-123 A Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 12 V Reverse voltage (R ≥ 10 kΩ) VRM 15 Forward current, TA ≤ 60 ˚C IF 50 Operating temperature range Top – 55 … + 150 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient Semiconductor Group 1 600 K/W 10.94 BB 512 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – – – 20 200 440 17.5 470 – 520 34 Reverse current VR = 10 V VR = 10 V, TA = 60 ˚C IR Diode capacitance, f = 1 MHz VR = 1 V VR = 8 V CT Capacitance ratio VR = 1 V, 8 V CT1 CT8 15 – – – Series resistance f= 0.5 MHz, VR = 1 V rs – 1.4 – Ω Figure of merit f= 0.5 MHz, VR = 1 V Q – 480 – – Temperature coefficient of diode capacitance f= 1 MHz, VR = 1 V TCC – 500 – ppm/K Capacitance matching VR = 1 … 8 V ∆CT – – 3 % Semiconductor Group CT 2 nA pF BB 512 Diode capacitance CT = f (VR) Capacitance ratio CT/CTref = f (VR) Capacitance ratio CT/CT1V = f (VR) Temperature coefficient of junction capacitance TCC = f (VR) Semiconductor Group 3