INFINEON PTF240101S

PTF240101S
Thermally-Enhanced High Power RF LDMOS FET
10 W, 2400 – 2700 MHz
Description
The PTF240101S is a 10-watt, internally-matched GOLDMOS® FET device
intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz
band. Full gold metallization ensures excellent device lifetime and reliability.
Features
Three-Carrier CDMA2000 Performance
-30
35
-35
30
-40
Efficiency
-45
25
ACP Up
20
-50
15
-55
ALT Up
10
-60
ACP Low
-65
5
Adj. Ch. Power Ratio (dBc)
Drain Efficiency (%)
VDD = 28 V, IDQ = 180 mA, ƒ = 2680 MHz
40
-70
0
28
30
32
34
36
38
40
PTF240101S
Package H-32259-2
•
Pb-free and RoHS-compliant
•
Typical CDMA2000 performance
- Average output power = 2.0 W
- Gain = 16 dB
- Efficiency = 18%
- ACPR = –55 dBc
•
Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 45%
•
Integrated ESD protection: Human Body
Model Class 1 (minimum)
•
Excellent thermal stability
•
Low HCI drift
•
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
42
Output Power (dBm), PEP
RF Characteristics, CDMA2000 Operation
CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 2 W, ƒ = 2680 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
ACPR
—
–55
—
dBc
Gps
—
16
—
dB
Symbol
Min
Typ
Max
Unit
Gain
Gps
15.5
16
—
dB
Intermodulation Distortion
IMD
—
–31
–28
dBc
Adjacent Channel Power Ratio
Gain
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz
Characteristic
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 05, 2007-04-12
PTF240101S
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture) (cont.)
VDD = 28 V, IDQ = 160 mA, ƒ = 2680 MHz, tone spacing = 7 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
14
15
—
dB
Efficiency at 1 W avg.
ηD
9
10
—
%
Intermodulation Distortion at 1 W avg.
IMD
—
–42
–40
dBc
Pcomp
—
0.3
1.0
dB
IRL
–10
–12
—
dB
Compression at 10 W avg.
Input Return Loss at 2.4 GHz
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
On-State Resistance
VGS = 10 V, V DS = 0.1 A
RDS(on)
—
0.83
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 180 mA
VGS
2.5
3.2
4.0
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
58
W
0.333
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 10 W CW)
RθJC
3.0
°C/W
Ordering Information
Type
Package Outline
Package Description
Marking
PTF240101S
H-32259-2
Thermally-enhanced, surface mount
PTF240101S
Data Sheet
2 of 12
Rev. 05, 2007-04-12
PTF240101S
Gain & Efficiency vs. Output Power
Broadband Performance
VDD = 28 V, IDQ = 180 mA, ƒ = 2680 MHz
VDD = 28 V, IDQ = 180 mA, POUT = 10 W
Gain
40
5
60
35
0
16
50
15
40
14
30
Efficiency
13
20
12
10
Gain (dB), Efficiency (%)
28
33
38
Efficiency
43
-10
Return Loss
20
15
-15
-20
Gain
2620
Output Power (dBm)
2640
2660
2680
-25
2700
Frequency (MHz)
Gain vs. Output Power
IS-95 CDMA Performance
V DD = 28 V, ƒ = 2680 MHz
V DD = 28 V, IDQ = 180 mA, ƒ = 2680 MHz
18.0
-30
70
17.5
60
Drain Efficiency (%)
Power Gain (dB)
-5
25
10
2600
0
11
30
IDQ = 220 mA
17.0
16.5
16.0
IDQ = 180 mA
15.5
IDQ = 100 mA
-50
30
38
41
44
Alt–1
-65
-70
29
31
33
35
37
39
41
Output Power (dBm), Avg.
Output Power (dBm)
Data Sheet
-60
Efficiency
0
35
-55
20
14.5
32
-45
40
10
29
-40
50
15.0
26
-35
Adj
Adj. Ch. Power Ratio (dBc)
Gain (dB)
17
70
Drain Efficiency (%)
18
Return Loss (dB)
Typical Performance, CDMA2000 Operation (measurements taken in broadband test fixture)
3 of 12
Rev. 05, 2007-04-12
PTF240101S
Typical Performance (cont.)
Gate-Source Voltage vs. Temperature
VDD = 28 V, IDQ = 180 mA, ƒ1 = 2679 MHz, ƒ2 = 2680 MHz
Voltage normalized to typical gate voltage,
series show current.
-20
1.04
-30
1.03
3rd Order
-40
Normalized Bias Voltage
IMD (dBc)
Intermodulation Distortion vs. Output Power
5th Order
-50
-60
7th Order
-70
-80
0.05
0.28
0.51
1.02
0.74
1.01
0.97
1.00
1.2
0.99
0.98
0.97
0.96
33
35
37
39
41
43
-20
0
20
Output Power, PEP (dBm)
40
60
80
100
Case Temperature (ºC)
G
S
Z Source Ω
Z Load Ω
MHz
R
jX
R
jX
2400
3.8
–13.5
4.7
–3.6
2450
3.4
–12.7
4.3
–3.3
2500
3.1
–10.5
4.0
–2.8
2550
3.3
–10.0
3.6
–2.4
2600
2.6
–8.3
3.4
–1.9
2650
2.9
–7.4
3.2
–1.4
2700
2.5
–6.0
3.1
–1.0
Data Sheet
2700 MHz
2400 MHz
0.1
Z Source
2700 MHz
E
WAV
<---
Frequency
Z Load
0.2
Z Load
0.1
Z Source
Z0 = 50 Ω
0 .0
D
W ARD LOA D T HS T O
LE NG
- W AV E LE NGT
Broadband Circuit Impedance Data
0. 2
2400 MHz
0. 3
4 of 12
Rev. 05, 2007-04-12
PTF240101S
CDMA2000 Reference Circuit
C1
0.001µF
R2
1.3KV
R1
1.2KV
QQ1
LM7805
V DD
Q1
BCP56
C2
0.001µF
R3
2K V
C3
0.001µF
R4
2K V
R5
10V
R6
5.1K
C4
10 µF
35V
C5
0.1µF
R7
5.1K V
C6
10pF
C12
4.7pF
VD D
C13
100µF
50V
R8
10V
l10
C7
4.7pF l7
C10
4.7pF
RF_IN
l1
l2
l3
C8
1.4pF
C9
0.5pF
C14
0.5pF
DUT
l4
l5
l6
l8
l9
l11
C11
0.6pF
C16
4.7pF
l12
l13
RF_OUT
C15
0.4pF
240101s_sch
Reference Circuit Schematic for ƒ = 2650 MHz
Circuit Assembly Information
DUT
PTF240101S
Circuit Board
0.76 mm [0.030"] thick, εr = 4.5
LDMOS Transistor
Rogers TMM4, 2 oz. Copper
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
l12
l13
Dimensions: L x W (mm)
2.67 x 1.35
7.37 x 1.35
10.67 x 1.35
7.06 x 1.35
1.83 x 1.35
1.09 x 8.81
17.60 x 0.69
2.18 x 8.81
1.52 x 8.81
20.73 x 0.69
4.83 x 8.81
10.92 x 1.35
13.41 x 1.35
Data Sheet
Electrical Characteristics at 2650 MHz
0.043 λ, 50.0 Ω
0.119 λ, 50.0 Ω
0.173 λ, 50.0 Ω
0.114 λ, 50.0 Ω
0.030 λ, 50.0 Ω
0.019 λ, 13.3 Ω
0.278 λ, 75.0 Ω
0.038 λ, 13.3 Ω
0.027 λ, 13.3 Ω
0.327 λ, 75.0 Ω
0.086 λ, 13.3 Ω
0.177 λ, 50.0 Ω
0.217 λ, 50.0 Ω
5 of 12
Dimensions: L x W (in.)
0.105 x 0.053
0.290 x 0.053
0.420 x 0.053
0.278 x 0.053
0.072 x 0.053
0.043 x 0.347
0.693 x 0.027
0.086 x 0.347
0.060 x 0.347
0.816 x 0.027
0.190 x 0.347
0.430 x 0.053
0.528 x 0.053
Rev. 05, 2007-04-12
PTF240101S
CDMA2000 Reference Circuit (cont.)
VDD
+
10
35V
LM
+
V DD
RF_OUT
RF_IN
240101s_assy
Reference circuit assembly diagram (not to scale)*
Component
Description
Suggested Manufacturer
P/N or Comment
C1, C2, C3
C4
C5
C6
C7, C10, C12, C16
C8
C9, C14
C11
C13
C15
Q1
QQ1
R1
R2
R3
R4
R5, R8
R6, R7
Capacitor, 0.001 µF
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Ceramic capacitor, 10 pF
Ceramic capacitor, 4.7 pF
Ceramic capacitor, 1.4 pF
Ceramic capacitor, 0.5 pF
Ceramic capacitor, 0.6 pF
Tantalum capacitor, 100 µF, 50 V
Ceramic capacitor, 0.4 pF
Transistor
Voltage Regulator
Chip resistor, 1.2 k-ohms
Chip resistor, 1.3 k-ohms
Chip resistor, 2 k-ohms
Potentiometer, 2 k-ohms
Chip resistor, 10 ohms
Chip resistor, 5.1 k-ohms
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
ATC
ATC
ATC
Digi-Key
ATC
Infineon
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
PCC1772CT-ND
PCS6106TR-ND
PCC104BCT-ND
100B 100
100B 4R7
100B 1R4
100B 0R5
100A 0R6
P5571-ND
100B 0R4
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P2KECT-ND
3224W-202ETR-ND
P10ECT-ND
P5.1KECT-ND
*Gerber files for this circuit are available upon request.
Data Sheet
6 of 12
Rev. 05, 2007-04-12
PTF240101S
RF Characteristics, WiMAX Operation
WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 160 mA, POUT = 1 W, ƒ = 2400 MHz, 3.5 MHz bandwidth, 4 MHz sampling rate, 64 QAM 2/3
Characteristic
Symbol
Min
Typ
Max
Unit
Error Vector Magnitude
EVM
—
–41
—
dBc
Gain
Gps
—
15.5
—
dB
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 160 mA, POUT = 1 W avg., ƒ = 2300, 2400, 2500 MHz, tone spacing = 7 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
14.0
15.5
—
dB
Intermodulation Distortion
IMD
—
–43
–40
dBc
Drain Efficiency
ηD
9
10
—
%
Input Return Loss at 2.4 GHz
IRL
—
–14
–10
dB
WiMAX Performance
WiMAX Performance
VDD = 28 V, IDQ = 160 mA,
(modulation = 64 QAM2/3, channel bandwidth = 3.5
MHz, sample rate = 4 MHz)
-25
VDD = 28 V, IDQ = 160 mA, ƒ = 2400 MHz,
(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz)
-25
t = +85 °C
2.3Ghz
2.4Ghz
2.5Ghz
-28
-31
-30
EVM (dB)
Error Vector Magnitude (dBc)
Typical WiMAX Performance (measurements taken in broadband test fixture)
-34
t = –33 °C
-35
-40
-37
t = +25 °C
-45
-40
-43
-50
20
22
24
26
28
30
20
Output Power (dBm)
Data Sheet
22
24
26
28
30
Output Power (dBm)
7 of 12
Rev. 05, 2007-04-12
PTF240101S
Typical WiMAX Performance (cont.)
Two-tone Broadband Performance
Gain vs. Output Power
VDD = 28 V, IDQ = 160 mA, POUT = 1 W avg.
(application circuit ACW1 covers 2.3 – 2.5 GHz)
30
16.5
Power Gain (dB)
Gain (dB), Efficiency (%)
IDQ = 230 mA
16.0
15.5
IDQ = 160 mA
15.0
14.5
IDQ = 140 mA
14.0
0
Return Loss
25
20
-10
-20
Gain
-30
15
Efficiency
-40
10
13.5
Input Return Loss (dB)
VDD = 24 V, ƒ = 2400 MHz
IMD
25
30
35
40
5
2300
45
Output Power (dBm)
2350
2400
2450
-50
2500
Frequency (MHz)
See next page for WiMAX circuit information
Data Sheet
8 of 12
Rev. 05, 2007-04-12
PTF240101S
WiMAX Reference Circuit
C1
0.001µF
R1
1.2kV
R2
1.3kV
QQ1
LM7805
VDD
Q1
BCP56
C2
0.001µF
C3
0.001µF
R3
2kV
R4
2kV
C4
10 µF
35V
R5
5.1kV
C5
0.1µF
R7
10V
R6
5.1kV
C6
1µF
C10
8.2pF
C7
8.2pF
l6
l1
l2
l4
VDD
C13
6.8pF
DUT
l3
C12
100µF
50V
l10
C9
6.8pF
RF_IN
C11
1µF
l7
l5
l8
l9
l11
RF_OUT
C8
0.6pF
2
4
0
1
0
1
_
sw ima
_
xb
d
WiMAX reference circuit schematic ƒ = 2500 MHz
Circuit Assembly Information
DUT
PTF240101S
Circuit Board
0.76 mm [0.030"] thick, εr = 4.5
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
LDMOS Transistor
Rogers TMM4, 2 oz. Copper
Electrical Characteristics at 2500 MHz 1 Dimensions: L x W (mm)
0.036 λ, 50.0 Ω
5.28 x 1.37
0.081 λ, 50.0 Ω
13.69 x 1.37
0.105 λ, 38.0 Ω
6.71 x 2.16
0.051 λ, 8.8 Ω
3.00 x 13.64
0.035 λ, 8.8 Ω
2.03 x 13.64
0.278 λ, 75.0 Ω
17.60 x 0.69
0.025 λ, 12.9 Ω
1.50 x 8.89
0.147 λ, 12.9 Ω
8.71 x 8.89
0.323 λ, 68.0 Ω
21.59 x 0.76
0.133 λ, 33.0 Ω
8.38 x 2.74
0.183 λ, 50.0 Ω
11.91 x 1.37
Dimensions: L x W (in.)
0.208 x 0.054
0.539 x 0.054
0.264 x 0.085
0.118 x 0.537
0.080 x 0.537
0.693 x 0.027
0.059 x 0.350
0.343 x 0.350
0.850 x 0.030
0.330 x 0.108
0.469 x 0.054
1 Electrical Characteristics are rounded
Data Sheet
9 of 12
Rev. 05, 2007-04-12
PTF240101S
WiMAX Reference Circuit (cont.)
VDD
LM
VDD
RF_IN
RF_OUT
2 4 0 1 0 1 s_ w im a x_ a sy
Reference circuit assembly diagram (not to scale)*
Component
Description
Suggested Manufacturer
P/N or Comment
C1, C2, C3
C4
C5
C6, C11
C7, C10
C8
C9, C13
C12
C15
Q1
QQ1
R1
R2
R3
R4
R5, R6
R7
Capacitor, 0.001 µF
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Ceramic capacitor, 0.01 µF
Ceramic capacitor, 8.2 pF
Ceramic capacitor, 0.6 pF
Ceramic capacitor, 6.8 pF
Tantalum capacitor, 100 µF, 50 V
Ceramic capacitor, 0.4 pF
Transistor
Voltage Regulator
Chip resistor, 1.2k ohms
Chip resistor, 1.3k ohms
Potentiometer, 2k ohms
Chip resistor, 2k ohms
Chip resistor, 5.1k ohms
Chip resistor, 10 ohms
Digi-Key
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
ATC
Digi-Key
ATC
Infineon
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
PCC1772CT-ND
PCS6106TR-ND
PCC104BCT-ND
PCC103BCT-ND
100B 8R2
100B 0R6
100B 6R8
P5571-ND
100B 0R4
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
3224W-202ETR-ND
P2KECT-ND
P5.1KECT-ND
P10ECT-ND
*Gerber files for this circuit are available upon request.
Data Sheet
10 of 12
Rev. 05, 2007-04-12
PTF240101S
Package Outline Specifications
Package H-32259-2
2X 3.30
[.130]
0.38
[.015]
1.78
[.070]
2X 0.20±0.03
[.008±.001]
1.02 [0.040]
0.51 [0.020]
CL
4X R0.25
[R.010]
MAX.
D
60°
2X 1.27
[.050]
2X 3.30
[.130]
6.86
[.270]
C
L
10.16±0.25
[.400±.010]
C
L
6.35
[.250]SQ
4X 0.51
[.020]
4X 0.25 MAX
[.010]
2X 1.65±0.51
[.065±.020]
G
LEAD COPLANARITY
BOTTOM OF LEAD
TO BOTTOM OF PACKAGE
.000±.002 (TYP)
7.37
[.290]
REF
6.86
[.270]
0°-7°
DRAFT ANGLE
6.48
[.255] SQ
0.74±0.05
[.028±.002]
2.88±.25
[.114±.01]
0.20±0.025
[.008±.001]
H-32259-2-1-2307
S
Diagram Notes—unless otherwise specified:
1.
Lead thickness: 0.21 ± 0.03 [.008 ± .001].
2.
All tolerances ± 0.127 [.005].
3.
Pins: D = drain, S = source, G = gate.
4.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
5.
Primary dimensions are mm. Alternate dimensions are inches.
6.
Gold plating thickness: 2.54 micron [100 microinch] (min).
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
11 of 12
Rev. 05, 2007-04-12
PTF240101S
Confidential, Limited Internal Distribution
Revision History:
2007-04-12
2006-12-15, Data Sheet
Previous Version:
Data Sheet
Page
Subjects (major changes since last revision)
9, 10
Update and correct circuit diagrams and information
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
[email protected]
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2007-04-12
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2005.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
12 of 12
Rev. 05, 2007-04-12