BAR 63-03W Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering Code (tape and reel) BAR 63-03W G Q62702-A1025 Pin Configuration Package 1 2 A C SOD-323 1) Maximum Ratings Parameter Symbol Reverse voltage VR IF Ptot Top Tstg Forward current Total Power dissipation TS ≤ 111°C Operating temperature range Storage temperature range BAR 63-03W Unit 50 V 100 mA 250 mW -55 +150°C °C -55...+150°C °C Thermal Resistance Junction-ambient 1) Rth JA Rth JS Junction-soldering point ≤ 235 K/W ≤ 155 K/W _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 22.07.94 BAR 63-03W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. 50 - - - - 50 DC Characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA V(BR) Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz CT Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance rf V IR nA VF V - 1.2 pF - 0.3 - CT pF - 0.21 0.3 Ω - 1.2 1 2 - - 75 - τL ns Ls nH - Semiconductor Group 0.95 2 2.0 - Edition A01, 22.07.94 BAR 63-03W Diode capacitance CT = f (VR) Forward resistance rf = f (IF) f = 100 MHz f = 1 MHz Forward current IF = f (TA*TS) mA T S IF T S A T TA S Semiconductor Group 3 Edition A01, 22.07.94 BAR 63-03W Permissible load RthJS = f (tp) Permissible load IFmax / IFDC = f (tp) K/W IF max _______ I DC F R thJS tp tp Semiconductor Group 4 Edition A01, 22.07.94